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10D15 M62371GP G4PC50 2SK19 MB86H25B 1E106 CP501 TB2932HQ
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SIEMENS AG
Part No. HYB5117400BJ-50- Q67100-Q1088 HYB5117400BJ-50 HYB5117400BJ-60 HYB5117400BJ-70
OCR Text ...0 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns * * Single + 5 V ( 10 %) supply Low power dissipation max. 660 active mW (-50 version) max. 605 active mW (-60 version) max. 550 active mW (-70 version) 11 mW standby (TTL) 5...
Description Connector Cover; Leaded Process Compatible:No; Enclosure Color:Gray; For Use With:SB 350 Connector; Peak Reflow Compatible (260 C):No RoHS Compliant: Yes 4米4位动态随机存储器
4M x 4-Bit Dynamic RAM

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SIEMENS AG
Part No. HYB5116400BJ-50- Q67100-Q1049 Q67100-Q1051 HYB5116400BJ-70 HYB5116400BJ-50 HYB5116400BJ-60
OCR Text ...0 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns * * Single + 5 V ( 10 %) supply Low power dissipation max. 550 active mW (-50 version) max. 495 active mW (-60 version) max. 440 active mW (-70 version) 11 mW standby (TTL) 5...
Description 4M x 4-Bit Dynamic RAM 4M X 4 FAST PAGE DRAM, 70 ns, PDSO24
4M x 4-Bit Dynamic RAM 4米4位动态随机存储器

File Size 328.36K  /  26 Page

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    6MBP50VDA120-50

Fuji Electric
Part No. 6MBP50VDA120-50
OCR Text ...ge of pre-driver (*4) v cc -0.5 20 v input signal voltage (*5) v in -0.5 v cc +0.5 v alarm signal voltage (*6) v alm -0.5 v cc v alarm signa...50/60hz sine wave 1min. all terminals should be connected together during the test. features ? tem...
Description IGBT MODULE (V series) 1200V / 50A / IPM

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SIEMENS AG
Part No. HYB5116165BSJ-50- HYB5116165BJ-70 HYB5116165BJ-60 HYB5118165BJ-70 Q67100-Q1109 HYB5116165BJ-50
OCR Text ...de (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns * * * * * * * * * Single + 5 V ( 10 %) supply Low power dissipation max. 1100 active mW ( HYB5118165BSJ-50) max. 990 active mW ( HYB5118165BS...
Description 1M x 16-Bit Dynamic RAM 1k & 4k Refresh
1M x 16-Bit Dynamic RAM 1k & 4k Refresh

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    SIEMENS AG
Part No. HYB314400BJ-50- HYB314400BJ-60
OCR Text ...ms * Plastic Packages: P-SOJ-26/20-2 with 300 mil width Semiconductor Group 1 1998-10-01 HYB 314400BJ-50/-60 3.3 V 1M x 4 DRAM The HYB 314400BJ is the new generation dynamic RAM organized as 1 048 576 words by 4-bit. The HYB...
Description 1M x 4-Bit Dynamic RAM
1M × 4-Bit Dynamic RAM(Fast Page Mode)(1M x 4动RAM(快速页面模)

File Size 129.43K  /  25 Page

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SIEMENS AG
Part No. HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB314175BJ-55 HYB314175BJL-60 HYB314175BJL-55 Q67100-Q2149 HYB314175BJ-50
OCR Text ...Hype page mode (EDO) cycle time 20 ns (-50 & -55 version) 25 ns (-60 version) High data rate 50 MHz (-50 & -55 version) 40 MHz (-60 version) Single + 3.3 V (0.3 V) supply with a builtin VBB generator * * * * * * * * ...
Description High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出(EDO)动态RAM)

File Size 1,310.29K  /  24 Page

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SIEMENS A G
SIEMENS AG
Part No. HYB314171BJ-50- HYB314171BJL-50 HYB314171BJL-70 HYB314171BJ-60 HYB314171BJ-50 HYB314171BJ-70
OCR Text ...ss time: 15ns (-50,-60 version) 20 ns (-70 version) Cycle time: 95 ns (-50 version) 110 ns (-60 version) 130 ns (-70 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) 45 ns (-70 version) Single + 3.3 V ( 0.3 V) supp...
Description 3.3V 256 K x 16-Bit Dynamic RAM 3.3V Low Power 256 K x 16-Bit Dynamic RAM with Self Refresh

File Size 1,342.36K  /  24 Page

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    SIEMENS AG
Part No. HYB3117805BSJ-50-
OCR Text ...de (EDO) cycle time 50 13 25 84 20 -60 60 15 30 104 25 -70 70 20 35 124 30 ns ns ns ns ns * * Single + 3.3 V ( 0.3 V) supply Low power dissipation max. 432 mW active (-50 version) max. 396 mW active (-60 version) max. 360 mW active (-...
Description 2M x 8 - Bit Dynamic RAM 2k Refresh 200万8 -位动态随机存储器2k刷新

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    AAT3110IGU-5.0-T1 AAT3110IGU-4.5-T1 AAT3110IJS-4.5-T1

Advanced Analog Technology,lnc.
Advanced Analog Technology, Inc.
Part No. AAT3110IGU-5.0-T1 AAT3110IGU-4.5-T1 AAT3110IJS-4.5-T1
OCR Text ... c 0.01 0.1 1 10 100 1000 0 10 20 30 40 50 60 70 80 90 100 efficiency vs. load current load current (ma) efficiency (%) v in = 3.6v v in = 3.3v v in = 3.0v v in = 2.7v efficiency vs. supply voltage 2.70 3.00 3.50 4.00 4.50 5.00 50 45 5...
Description MicroPowerRegulated Charge Pump 微功耗稳压电荷泵

File Size 281.69K  /  20 Page

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    CAT5110TBI-50-T3 CAT5110TBI-00-T3 CAT5110SDI-50-GT3 CAT5110TBI-10-T3 CAT5110TBI-50-GT10 CAT5110TBI-00-GT3 CAT5110TBI-00-

Catalyst Semiconductor
Part No. CAT5110TBI-50-T3 CAT5110TBI-00-T3 CAT5110SDI-50-GT3 CAT5110TBI-10-T3 CAT5110TBI-50-GT10 CAT5110TBI-00-GT3 CAT5110TBI-00-GT10 CAT5110TBI-50-GT3
OCR Text 20, rev. f cat5110, cat5118, cat5119 cat5123, cat5124, cat5125 32-tap minipot? digitally programmable potentiometers with 2-wire interface...50) 40 50 60 end-to-end resistance (-0) 8 0 2 end-to-end resistance tempco tc r 200 ppm/oc ratiom...
Description 32-Tap MiniPotDigitally Programmable Potentiometers with 2-Wire Interface
32-Tap MiniPot??Digitally Programmable Potentiometers with 2-Wire Interface

File Size 686.16K  /  16 Page

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