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Toshiba, Corp.
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Part No. |
2SK3561
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OCR Text |
...) ? enhancement mode: v th = 2.0~4.0 v (v ds = 10 v, i d = 1 ma) maximum ratings (ta = 25c) characteristics symbol rating unit ...10u1b weight : 1.7 g (typ.) 1 3 2
2sk3561 2005-01-26 2 electrical characteristics (ta = ... |
Description |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (MOSVI) 东芝场效应晶体管频道马鞍山类型(MOSVI
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File Size |
224.84K /
6 Page |
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it Online |
Download Datasheet
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Toshiba
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Part No. |
TK4A60DA
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OCR Text |
...ansfer admittance: ? y fs ? = 2.2 s (typ.) ? low leakage current: i dss = 10 a (v ds = 600 v) ? enhancement-mode: v th = 2.4 to 4...10u1b weight: 1.7 g (typ.) 1 3 2 1: gate 2: drain 3: source internal connection http://www.d... |
Description |
Field Effect Transistor Silicon N-Channel MOS Type
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File Size |
246.53K /
6 Page |
View
it Online |
Download Datasheet
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Price and Availability
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