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  1ns Datasheet PDF File

For 1ns Found Datasheets File :: 2386    Search Time::1.328ms    
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    ST3237E ST3237EBD ST3237EBDR ST3237EBPR ST3237EBTR ST3237ECD ST3237ECDR ST3237ECPR ST3237ECTR ST3237EC ST3237EB 8785 -87

意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. ST3237E ST3237EBD ST3237EBDR ST3237EBPR ST3237EBTR ST3237ECD ST3237ECDR ST3237ECPR ST3237ECTR ST3237EC ST3237EB 8785 -8785
OCR Text ...0 A 0.7 to 0.7 to 0.7 to 0.7 to 1ns 1ns 1ns 1ns 4A 8A 12 A 16 A 2A 4A 6A 8A 9/13 ST3237E SO-28 MECHANICAL DATA mm. DIM. MIN. A a1 b b1 C c1 D E e e3 F L S 7.40 0.50 17.70 10.00 1.27 16.51 7.60 1.27 8 (max.) 0.291 0.020 18.10 10.6...
Description ??5KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY
±15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY
15KV ESP PROTECTED 3 TO 5.5V 250KBPS RS-232 TRANSCEIVER WITH STAND-BY
15KV ESD-PROTECTED 1mA 3 TO 5.5V 250KBPS RS-232 TRANSCEIVER WITH STAND-BY
【15KV ESD-PROTECTED, 1mA, 3 TO 5.5V, 250KBPS, RS-232 TRANSCEIVER WITH STAND-BY
15KV ESP PROTECTED 3 TO 5.5V 250KBPS RS-232 TRANSCEIVER WITH STAND-BY

File Size 316.27K  /  13 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M64163PH-RG K4M64163PH K4M64163PH-RBF1L K4M64163PH-RBF75 K4M64163PH-RBF90 K4M64163PH-RF1L K4M64163PH-RF75 K4M64163PH-RF90
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 1M x 16Bit x 4 Banks Mobile SDRAM in 54CSP 100万16 × 4银行4CSP移动SDRAM

File Size 112.58K  /  12 Page

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    FMMT2369 FMMT2369A FMMT2369-1J FMMT2369R-9R FMMTA2369AR-9A FMMTA2369A-P5

Electronic Theatre Controls, Inc.
ETC[ETC]
ZETEX[Zetex Semiconductors]
List of Unclassifed Manufacturers
Part No. FMMT2369 FMMT2369A FMMT2369-1J FMMT2369R-9R FMMTA2369AR-9A FMMTA2369A-P5
OCR Text ... t1 +10.6V 3V 270 0 -1.5V < 1ns 3K3 CS < 4pF * Pulse width (t1)=300ns Duty cycle = 2% tOFF CIRCUIT t1 +10.75V 3V 270 0 3K3 -4.15V < 1ns CS < 4pF * Pulse width (t1)=300ns Duty cycle = 2% STORAGE TEST CIRCUIT t1 +6V 10V 9...
Description SOT23 NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS 采用SOT23 NPN硅平面高速开关晶体管

File Size 34.33K  /  2 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4M511633E-Y K4M511633E K4M511633E-C K4M511633E-F1H K4M511633E-F1L K4M511633E-F75 K4M511633E-L K4M511633E-P K4M511633E-YC1H0
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description 32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
8M x 16Bit x 4 Banks Mobile SDRAM in 54FBGA 8米16 × 4银行4FBGA移动SDRAM

File Size 110.15K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. K4M511533E-YPC K4M511533E K4M511533E-C K4M511533E-F1H K4M511533E-F1L K4M511533E-F75 K4M511533E-L K4M511533E-Y K4M511533E-YC K4M511533E-YP K4M511533E-YF1H0 K4M511533E-YC1L0 K4M511533E-YL1L0 K4M511533E-PF750 K4M511533E-YC750
OCR Text ...lock rising time is longer than 1ns, (tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf) = 1ns. If tr & tf is longer than 1ns, transient time compensation should be considered, i.e., [(tr + tf)/2-1]n...
Description Mobile-SDRAM 移动SDRAM
32M X 16 SYNCHRONOUS DRAM, 7 ns, PBGA54
32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PBGA54

File Size 104.22K  /  12 Page

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    Daesan Electronics, Corp.
Part No. HYM71V8M655HCT6
OCR Text ... address signal input hold time 1ns 1ns 1ns 10h 10h 10h byte34 data signal input setup time 2ns 2ns 2ns 20h 20h 20h byte35 data signal input hold time 1ns 1ns 1ns 10h 10h 10h byte36 ~61 superset information (may be used in future) - ...
Description 8Mx64|3.3V|8/P/S|x4|SDR SDRAM - SO DIMM 64MB 8Mx64 | 3.3 | 8/P/S | x4 | SDRAM的特别提款权-4MB的内

File Size 235.07K  /  14 Page

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    PI90LV017AWE PI90LV027AUE PI90LV017AUE PI90LV027AWE PI90LV031AWE

Pericom Semiconductor Corporation
Pericom Semiconductor C...
Part No. PI90LV017AWE PI90LV027AUE PI90LV017AUE PI90LV027AWE PI90LV031AWE
OCR Text ...: f = 1 mhz, z o = 50 , tr 1ns, and t f 1ns. 10. output short circuit current (i os ) is specified as magnitude only, minus sign indicates direction only. 11. c l includes probe and jig capacitance. 12. all input voltages are for ...
Description 3V LVDS High-Speed Differential Line Drivers
   3V LVDS High-Speed Differential Line Drivers

File Size 426.78K  /  11 Page

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For 1ns Found Datasheets File :: 2386    Search Time::1.328ms    
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