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CEL[California Eastern Labs]
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| Part No. |
NE687M13-T3-A NE687M13 NE687M13-A
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| OCR Text |
...64 -153.87 -160.59 -165.22 -169.18 -172.49 179.29 171.08 161.33 152.78 146.02 141.59 138.25 134.43 MAG 21.86 19.01 16.05 13.57 11.62 9.91 8....a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design... |
| Description |
NECs NPN SILICON TRANSISTOR
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| File Size |
143.31K /
8 Page |
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CEL[California Eastern Labs]
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| Part No. |
NE685M13-T3-A NE685M13
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| OCR Text |
...1 0.296 0.291 0.286 S11 ANG -11.18 -24.79 -36.17 -46.95 -58.07 -67.22 -75.01 -82.74 -89.38 -95.62 -101.10 -106.13 -114.91 -122.59 -129.37 -1...A) MODEL RANGE Frequency: 0.1 to 4.0 GHz Bias: VCE = 0.5 V to 3 V, IC = 0.5 mA to 20 mA Date: 09/02
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| Description |
NPN SILICON TRANSISTOR
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| File Size |
141.66K /
9 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE681M03-T1-A NE681M03-A
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| OCR Text |
...C CJE VJE MJE CJC VJC Q1 239.6e-18 125 0.9854 12 0.200 1.933e-6 50 18.25 0.9771 10 11.81e-3 1.55e-18 1.860 0.870 4.0 5.2 1e-6 4.635 1.2e-12 ...a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design... |
| Description |
NECs NPN SILICON TRANSISTOR
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| File Size |
119.85K /
4 Page |
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CEL[California Eastern Labs]
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| Part No. |
NE678M04-T2-A NE678M04
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| OCR Text |
... GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance
+0.40-0.05 2
+0.30
2.... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.57K /
8 Page |
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it Online |
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Duracell
CEL[California Eastern Labs]
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| Part No. |
NE677M04-T2-A NE677M04
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| OCR Text |
....32 81.53 72.28 MAG 23.85 21.19 18.36 15.78 13.68 11.77 10.42 9.33 8.43 7.70 5.30 4.47 4.24 4.04 3.26 2.73 2.34 2.04 1.79 1.59 1.42 1.27 S21...a suffix added. The suffix -A indicates that the device is Pb-free. The -AZ suffix is used to design... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.21K /
8 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE662M04-T2-A NE662M04 NE662M04-T2
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| OCR Text |
...0 20 70 25 20 20 17 1.1 11 22 0.18 0.24 1.5 MIN NE662M04 2SC5508 M04 TYP MAX 200 200 100
DC
IEBO hFE fT MAG MSG |S21E|2 NF P1dB IP3 Cr...a
VALUE 150 650
UNIT C/W C/W
Junction to Case Resistance Junction to Ambient Resistance
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| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
310.57K /
11 Page |
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it Online |
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Duracell
CEL[California Eastern Labs]
California Eastern Laboratories, Inc.
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| Part No. |
NE661M04-T2-A NE661M04
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| OCR Text |
...16 1.23 1.32 1.45 1.60
21.40 18.90 18.40 15.70 14.20 13.20 12.50
0.67 0.64 0.64 0.63 0.62 0.61 0.60
13 31 33 43 50 59 67
0.60 0....a VALUE 240 650 UNIT C/W C/W
21.70 19.50 19.10 16.50 14.70 13.90 13.30
0.69 0.66 0.65 0.64 0.6... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR NPN硅高频晶体管
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| File Size |
146.08K /
10 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE552R479A-T1A-A NE552R479A
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| OCR Text |
... A nA nA V S V C/W 15 1 1.4 0.4 18 10 35 MIN 24.0 NE552R479A 79A TYP 26.0 11.0 45 230 100 100 1.9 MAX TEST CONDITIONS f = 2.45 GHz, VDS = 3....A Channel-to-Case
ADD
ID IGSS IDSS VTH gm BVDSS RTH
Notes: 1. DC performance is tested 100%. ... |
| Description |
NECs 3.0 V, 0.25 W L&S-BAND MEDIUM POWER SILICON LD-MOSFET
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| File Size |
392.01K /
9 Page |
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it Online |
Download Datasheet |
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