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15ns Datasheet PDF File

For 15ns Found Datasheets File :: 2776 Search Time::1.265ms
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				ETC[ETC] Samsung semiconductor
Part No.	KM416S1120D KM416S1120DT-G_F10 KM416S1120DT-G_F6 KM416S1120DT-G_F7 KM416S1120DT-G_F8 KM416S1120DT-G_FC KM416S1120DT-GF10 KM416S1120DT-GF6 KM416S1120DT-GF7 KM416S1120DT-GF8 KM416S1120DT-GFC KM416S1120DT-G/F7 KM416S1120DT-G/FC KM416S1120DT-G/F10 KM416S1120DT-G/F8
OCR Text	...n) Io = 0 mA CKEVIL(max), tCC = 15ns CKE & CLKVIL(max), tCC = CKEVIH(min), CSVIH(min), tCC = 15ns Input signals are changed one time during 30ns CKEVIH(min), CLKVIL(max), tCC = Input signals are stable CKEVIL(max), tCC = 15ns CKE & CLKVIL...
Description	512K x 16bit x 2 Banks Synchronous DRAM LVTTL
File Size	1,126.95K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
Part No.	KM416S4030C KM416S4030CT-F10 KM416S4030CT-F7 KM416S4030CT-F8 KM416S4030CT-FH KM416S4030CT-FL KM416S4030CT-G KM416S4030CT-G8
OCR Text	...OL = 0 mA CKE VIL(max), t CC = 15ns Operating current (One bank active) Precharge standby current in power-down mode ICC1 ICC2P ICC2PS CKE & CLK VIL(max), t CC = ICC2N CKE VIH(min), CS VIH(min), t CC = 15ns Input signals are c...
Description	64Mbit (1M x 16bit x 4 banks) bynchronous DRAM LVTTL, 125MHz 1M x 16Bit x 4 Banks Synchronous DRAM 100万16 × 4银行同步DRAM
File Size	124.02K / 11 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM72V32M636CLT6-H HYM72V32M636CLT6-K HYM72V32M636CT6
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras pulse width (tras) 45ns 45ns 2dh 2dh byt...
Description	SDRAM - SO DIMM 256MB
File Size	175.29K / 14 Page	View it Online	Download Datasheet

				SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM416S8030T-G_FH KM416S8030T-G_FL KM416S8030T-G/F10 KM416S8030T-G/F8 KM416S8030T-G/FH KM416S8030T-G/FL
OCR Text	...IOL = 0 mA CKE VIL(max), tCC = 15ns CKE & CLK VIL(max), tCC = CKE VIH(min),CS VIH(min),tCC=15ns Input signals are changed one time during 30ns CKE VIH(min), CLK VIL(max), tCC = Input signals are stable CKE VIL(max), tCC = 15ns CKE ...
Description	2M x 16Bit x 4 Banks Synchronous DRAM
File Size	116.68K / 10 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM72V32M636BLT6-H HYM72V32M636BLT6-K HYM72V32M636BT6
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras puls e width (tras) 45ns 45ns 2dh 2dh by...
Description	SDRAM - SO DIMM 256MB
File Size	202.59K / 13 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM72V32M736BLT8-H HYM72V32M736BLT8-K HYM72V32M736BT8
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras puls e width (tras) 45ns 45ns 2dh 2dh by...
Description	SDRAM - SO DIMM 256MB
File Size	139.67K / 13 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K4F170811D K4F170812D K4F160811D K4F160812D
OCR Text	... tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns Remark 5V/3.3V 5V/3.3V A0-A11 (A0 - A10)1 A0 - A8 (A0 - A9)1 Row Address Buffer Col. Address Buffer Column Decoder Data out Buffer OE Note) *1 : 2K R...
Description	2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
File Size	224.28K / 20 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K4F641612B K4F641612B-L K4F641612B-TC K4F641612B-TC50 K4F661612B-TC K4F661612B K4F661612B-L K4F641612B-TL60 K4F661612B-TL60 K4F641612B-TL45 K4F661612B-TL45 K4F641612B-TL50 K4F661612B-TL50
OCR Text	...ns 50ns 60ns tCAC 12ns 13ns 15ns tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. rese...
Description	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power
File Size	842.61K / 35 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K4F641612C K4F641612C-L K4F641612C-TC K4F641612C-TL50 K4F661612C-TC K4F661612C K4F661612C-L K4F641612C-TL60 K4F661612C-TL60 K4F641612C-TL45 K4F661612C-TL45 K4F661612C-TL50
OCR Text	...ns 50ns 60ns tCAC 12ns 13ns 15ns tRC 80ns 90ns 110ns tPC 31ns 35ns 40ns A0~A12 (A0~A11)1 A0~A8 (A0~A9)1 Row Address Buffer Col. Address Buffer Column Decoder Note) *1 : 4K Refresh SAMSUNG ELECTRONICS CO., LTD. rese...
Description	4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 50ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 45ns, low power 4M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low power
File Size	842.92K / 35 Page	View it Online	Download Datasheet

				Hynix Semiconductor
Part No.	HYM72V32M736BLT6-H HYM72V32M736BLT6-K HYM72V32M736BT6
OCR Text	...inimum row precharge time (trp) 15ns 20ns 0fh 14h byte28 minimum row active to row active delay (trrd) 15ns 15ns 0fh 0fh byte29 minimum /ras to /cas delay (trcd) 15ns 20ns 0fh 14h byte30 minimum /ras puls e width (tras) 45ns 45ns 2dh 2dh by...
Description	SDRAM - SO DIMM 256MB
File Size	97.75K / 13 Page	View it Online	Download Datasheet

For 15ns Found Datasheets File :: 2776 Search Time::1.265ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | <13> | 14 | 15 |