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Microsemi
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Part No. |
APT34F100B2
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OCR Text |
...= 13.36mh, r g = 25 , i as = 18a. 3 pulse test: pulse width < 380 s, duty cycle < 2%. 4 c o(cr) is de ? ned as a ? xed capacitance with the same stored charge as c oss with v ds = 67% of v (br)dss . 5 c o(er) is de ? ... |
Description |
FREDFETs
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File Size |
142.65K /
4 Page |
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GTM
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Part No. |
GI405
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OCR Text |
...
BVDSS RDS(ON) ID
-30V 32m -18A
Description
The GI405 uses advanced trench technology to provide excellent on-resistance, low gate charge and low gate resistance. The through-hole version (TO-251) is available for low-profile appl... |
Description |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
276.40K /
4 Page |
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GTM
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Part No. |
GI40N03
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OCR Text |
...A VDS=VGS, ID=250uA VDS=10V, ID=18A VGS= 20V VDS=30V, VGS=0 VDS=24V, VGS=0 VGS=10V, ID=18A VGS=4.5V, ID=14A ID=18A VDS=24V VGS=5V VDS=15V ID=18A VGS=10V RG=3.3 RD=0.83 VGS=0V VDS=25V f=1.0MHz
Gate Threshold Voltage Forward Transconductan... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
264.63K /
5 Page |
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it Online |
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Microsemi
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Part No. |
APTC60HM83FT2G
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OCR Text |
...resistance v gs = 10v, i d = 18a 83 m ? v gs(th) gate threshold voltage v gs = v ds , i d = 3ma 3 4 5 v i gss gate C source leakage current v gs = 20 v, v ds = 0v 100 na dynamic characteristics (per coolm... |
Description |
Full Bridge
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File Size |
456.96K /
7 Page |
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SamHop Microelectronics...
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Part No. |
STUD36L01A
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OCR Text |
...lay time m ohm v gs =10v , i d =18a v ds =10v , i d =18a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua ... |
Description |
Super high dense cell design for low RDS(ON).
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File Size |
108.33K /
8 Page |
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it Online |
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Price and Availability
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