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CREE[Cree, Inc]
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| Part No. |
CGH40025F
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| OCR Text |
...on 16 dB Small Signal Gain at 2.0 GHz 13 dB Small Signal Gain at 4.0 GHz 30 W typical P3dB 62 % Efficiency at P3dB 28 V Operation
APPLICA...84 -10, +2 -55, +150 175 4.0 245 3.8
Units Volts Volts C C mA C C/W
Note: 1 Measured for the C... |
| Description |
25 W, RF Power GaN HEMT
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| File Size |
940.07K /
12 Page |
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CREE[Cree, Inc]
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| Part No. |
CGH40045
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| OCR Text |
...n >16 dB Small Signal Gain at 2.0 GHz 12 dB Small Signal Gain at 4.0 GHz 55 W Typical P3dB 55 % Efficiency at P3dB 28 V Operation
APPLICA...84 -10, +2 -55, +150 175 15 245 2.7
Units Volts Volts C C mA C C/W
Note: 1 Measured for the CG... |
| Description |
45 W, RF Power GaN HEMT
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| File Size |
906.44K /
12 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA2157-99F_00 CHA2157 CHA2157-99F/00
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| OCR Text |
...nufactured with a HEMT process, 0.15m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...84 -26,96 -26,49 -26,42 S12 deg 104,2 83,1 61,9 136,7 58,7 58,7 48,4 40,4 67 39,6 36,3 37,1 39,9 23,... |
| Description |
55-60GHz Low Noise / Medium Power Amplifier 55 - 60GHz的低噪声/中等功率放大
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| File Size |
111.19K /
6 Page |
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UMS[United Monolithic Semiconductors]
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| Part No. |
CHA2266-99F_00 CHA2266
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| OCR Text |
...5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0....84.40 -98.21 -113.78 -121.29 -129.83 -139.02 -156.24 -174.36 166.53 149.22 132.80 118.54 103.68 MS12... |
| Description |
12.5-17GHz Low-Noise Driver Amplifier
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| File Size |
123.23K /
7 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA5215AFKF_23 CHA5215A CHA5215A99F_00 CHA5215AFKF/23 CHA5215A99F/00
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| OCR Text |
...is manufactured with a standard 0.7m implanted power MESFET, air bridges, via holes through the substrate and electron beam gate lithography...84 -8.65 -8.44 -8.25 -8.07 -7.93 -7.89 -7.99 -8.27 -8.64 -9.03 -9.39 -9.73 -10.1 -10.52 -11 -11.56 -... |
| Description |
5.8GHz Medium Power Amplifier 5.8GHz的中等功率放大器
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| File Size |
180.86K /
12 Page |
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United Monolithic Semic...
UMS[United Monolithic Semiconductors]
United Monolithic Semiconductors GmbH
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| Part No. |
CHA5390-99F CHA5390
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| OCR Text |
...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...84 -163,57 -176,44 172,84 163,42 154,77 146,73 139,75 133,59 127,43 121,26 115,63 110,09 104,27 S12 ... |
| Description |
24-30GHz Medium Power Amplifier 24 - 30GHz的中等功率放大器
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| File Size |
175.68K /
8 Page |
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POWER-ONE[Power-One]
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| Part No. |
CK2540-9ERD3TB1
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| OCR Text |
...Vo nom Io nom [VDC] [A]
5.1 12.0 15.0 24.0 12.0 15.0 24.0 20.0 10.0 8.0 5.0 5.0 4.0 2.5
Output 2 Vo nom Io nom [VDC] [A]
12.0 12.0 24.0...84 78 80 79
1
Options
5.0 4.0 2.5
-9 D V P T B1 B2
2
Table 1b: Model types BK, CK, a... |
| Description |
150 Watt DC-DC and AC-DC Converters
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| File Size |
571.93K /
34 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
CLX27-10 CLX27 CLX27-00 CLX27-05 CLX27-10H
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| OCR Text |
...ration current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 12 mA Drain current at pinch-off, low VDS VDS = 3 V, VGS = -3.5 V...84 76 68 61 54 47 39 32 24 15 5 -6 -19 -33 -48 -63 -76 -88 -98
|S21| [magn] 8,649 8,466 8,254 8,0... |
| Description |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Power-MESFET 伊雷尔X波段砷化镓功率场效应
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| File Size |
610.03K /
9 Page |
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it Online |
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Price and Availability
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