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  0.5-12ghz Datasheet PDF File

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    HMC34607

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Hittite Microwave Corporation
Part No. HMC34607
OCR Text ... dB Attenuation Range Die Size: 0.85 x 0.85 x 0.1 mm Typical Applications 2 ATTENUATORS - CHIP This attenuator is ideal for use as...5 - 20 GHz) Input Third Order Intercept (0.5 - 20 GHz) (Two-tone Input Power = -8 dBm Each Tone) ...
Description GaAs MMIC VOLTAGE-VARIABLE ATTENUATOR, DC - 20 GHz

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    HMC368LP406 HMC368LP4 368LP4E

Hittite Microwave Corporation
Part No. HMC368LP406 HMC368LP4 368LP4E
OCR Text 0 - 16.0 GHz OUTPUT Typical Applications Features Output Power: +15 dBm Wide Input Power Range: 0 to +10 dBm 100 kHz SSB Phase Noise:...5.0 Vdc, +2 dBm Drive Level Parameter Frequency Range, Input Frequency Range, Output Output Power F...
Description SMT GaAs PHEMT MMIC AMP-DOUBLER-AMP, 9.0 - 16.0 GHz OUTPUT

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    NBB-302-E NBB-302-T1 NBB-3021

RF Micro Devices
Part No. NBB-302-E NBB-302-T1 NBB-3021
OCR Text ...nal Power Gain, S21 Min. 12.0 11.0 9.0 Specification Typ. 13.5 13.0 12.5 10.5 9.5 (avg.) 0.6 2.4:1 2.0:1 2.8:1 Max. Unit dB dB dB dB dB dB Condition VD =+3.9V, ICC =50mA, Z0 =50, TA =+25C f=0.1GHz to 1.0GHz f=1.0GHz to 4....
Description CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 12GHz

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    CHA2266 CHA226607

United Monolithic Semiconductors
Part No. CHA2266 CHA226607
OCR Text ...5dB noise figure 34dB gain, +/- 0.5dB gain flatness Low DC power consumption:130mA Saturated output power : 16dBm Chip size 2.32 x 1.02 x 0....5 0 -5 -10 -15 -20 5 6 7 8 9 10 11 12 13 14 15 16 17 Frequency / GHz 18 19 20 21 22 23 24 25 4,1 2,...
Description 12.5-17GHz Low-Noise Driver Amplifier

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    CHA2290

United Monolithic Semiconductors
Part No. CHA2290
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 25 11 3.0:1 2.5:1 V5 = VD234 -1.5 5 [-0.9, +1.2] 25 180 +1.3 Gctrl P1dB VSWRin VSWRout Vd VC Id...
Description 10-18GHz Low Noise, Variable Gain Amplifier

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    CHA3023 CHA3023-99F

United Monolithic Semiconductors
Part No. CHA3023 CHA3023-99F
OCR Text ...actured with a PHEMT process of 0.25m gate length, via holes through the substrate and air bridges and it is available in die form. 15 10 Gain & RLoss 5 0 -5 -10 -15 -20 1 3 5 7 9 11 13 15 17 19 Frequency (GHz) dBS11 dBS22 dBS21 Main ...
Description 1-18 GHz WIDE BAND AMPLIFIER

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    CHA7114

United Monolithic Semiconductors
Part No. CHA7114
OCR Text ...ice is manufactured using a UMS 0.25 m power pHEMT process, including, via holes through the substrate and air bridges. To simplify the asse...5 9 9,5 10 10,5 11 11,5 12 Frequency (GHz) Linear Gain Pout @ 4dBc PAE @ 4dBc Main Features 0.25...
Description X Band High Power Amplifier

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    CHP4511

United Monolithic Semiconductors
Part No. CHP4511
OCR Text ...red with a Power PHEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is av...5 O/I 2 _ B _ E A Typical on wafer measurements n n n n n n n n Broadband performances :...
Description 6-18GHz Phase-shifter

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    CHX2090-QDG

United Monolithic Semiconductors
Part No. CHX2090-QDG
OCR Text ...actured with a PM-HEMT process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. typic...5:1 3.5 65 75 Is/Fin Fin level at the output for (11 < Fin < 12) for Fin = 13GHz Is/3Fin VS...
Description 12-24GHz Frequency Multiplier

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    CHA3666-SNF

United Monolithic Semiconductors
Part No. CHA3666-SNF
OCR Text ...with a standard P-HEMT process: 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. It is su...5.8-16GHz 2.8dB maximum noise figure 24dBm 3rd order intercept point 16dBm power at 1dB compressi...
Description 5.8-16GHz Low Noise Amplifier

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