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  0.18m Datasheet PDF File

For 0.18m Found Datasheets File :: 947    Search Time::1.484ms    
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    Cypress Semiconductor, Corp.
Cypress Semiconductor Corp.
Part No. CY7C1362B-166AI CY7C1362B-166AC CY7C1360B-200BGC CY7C1360B-200BGI CY7C1362B-200AC CY7C1362B-200AI CY7C1360B-200BZC CY7C1360B-200BZI CY7C1360B-200AC CY7C1362B-225AC CY7C1362B-166BZI CY7C1360B-225AJI CY7C1360B-225AC CY7C1360B-166AJC
OCR Text ...2.8 ns (for 225-mhz device) ? 3.0 ns (for 200-mhz device) ? 3.5 ns (for 166-mhz device) ? provide high-performance 3-1-1-1 access rate ? use...18m a a a a a a a a dqp b dq b dq b v ddq v ssq dq b dq b dq b dq b v ssq v ddq dq b dq b v ss nc v ...
Description CONNECTOR ACCESSORY 256K X 36 CACHE SRAM, 3.5 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 2.8 ns, PQFP100
9-Mbit (256K x 36/512K x 18) Pipelined SRAM 256K X 36 CACHE SRAM, 3 ns, PQFP100
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (S)
MOSFET, Switching; VDSS (V): 30; ID (A): 30; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.02]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1500; toff (µs) typ: 0.11; Package: DPAK (L)- (2)

File Size 575.40K  /  34 Page

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    RS111_2W2K7JT RS111_2W2K7KB RS111_2W2K7MB RS111_2W2K7JB RS111_2W2K7KT RS1112W2K7JT RS11-1_2W-5R1 RS111_2W2K7MT RS11-1_2W

Sharma Electro Components Inc.
SHARMA[Sharma Electro Components,Inc]
Part No. RS111_2W2K7JT RS111_2W2K7KB RS111_2W2K7MB RS111_2W2K7JB RS111_2W2K7KT RS1112W2K7JT RS11-1_2W-5R1 RS111_2W2K7MT RS11-1_2W-10 RS11-1_2W-100 RS11-1_2W-100K RS11-1_2W-10K RS11-1_2W-10M RS11-1_2W-11 RS11-1_2W-110 RS11-1_2W-110K RS11-1_2W-11K RS11-1_2W-11M RS11-1_2W-12 RS11-1_2W-120 RS11-1_2W-120K RS11-1_2W-12K RS11-1_2W-12M RS11-1_2W-13 RS11-1_2W-130 RS11-1_2W-130K RS11-1_2W-13K RS11-1_2W-13M RS11-1_2W-15 RS11-1_2W-150 RS11-1_2W-150K RS11-1_2W-15K RS11-1_2W-15M RS11-1_2W-16 RS11-1_2W-160 RS11-1_2W-160K RS11-1_2W-16K RS11-1_2W-16M RS11-1_2W-18 RS11-1_2W-180 RS11-1_2W-180K RS11-1_2W-18K RS11-1_2W-18M RS11-1_2W-1K RS11-1_2W-1K1 RS11-1_2W-1K2 RS11-1_2W-1K5 RS11-1_2W-1K6 RS11-1_2W-1K8 RS11-1_2W-1M RS11-1_2W-1M1 RS11-1_2W-1M2 RS11-1_2W-1M3 RS11-1_2W-1M5 RS11-1_2W-1M6 RS11-1_2W-1M8 RS11-1_2W-20 RS11-1_2W-200 RS11-1_2W-200K RS11-1_2W-20K RS11-1_2W-20M RS11-1_2W-22 RS11-1_2W-220 RS11-1_2W-220K RS11-1_2W-22K RS11-1_2W-22M RS11-1_2W-24 RS11-1_2W-240 RS11-1_2W-240K RS11-1_2W-24K RS11-1_2W-27 RS11-1_2W-270 RS11-1_2W-270K RS11-1_2W-27K RS11-1_2W-2K RS11-1_2W-2K2 RS11-1_2W-2K4 RS11-1_2W-2K7 RS11-1_2W-2M RS11-1_2W-2M2 RS11-1_2W-2M4 RS11-1_2W-2M7 RS11-1_2W-30 RS11-1_2W-300 RS11-1_2W-300K RS11-1_2W-30K R
OCR Text ... Type RS11-1/2 Rated Power (W) 0.5 L 9. 5 0.8 Dimensions in mm D 3. 5 0.2 W 26 2 0.69 d 0.01 Max Rated Voltage v 350 Max Overload...18M RS11-1/2W-20M RS11-1/2W-22M 2.0M 2.2M 2.4M 2.7M 3.0M 3.3M 3.6M 3.9M 4.3M 4.7M 5.1M 5.6M 6.2M 6.8...
Description THE FIXED CARBON COMPOSITION RESISTORS

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. M5M5W816WG-70HI
OCR Text ... Mitsubishi's high-perf ormance 0.18m CMOS technology . The M5M5W816 is suitable f or memory applications where a simple interf acing , battery operating and battery backup are the important design objectiv es. M5M5W816WG is packaged in a C...
Description 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

File Size 100.50K  /  10 Page

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    Cypress
Part No. CY7C1333F-100AC
OCR Text ...e) name tqfp i/o description a 0 , a 1 , a 37,36,32,33,34, 35,44,45,46, 47,48,49,81,82, 99,100 input- synchronous address inputs used to s...18m,36m and 72m are address expansion pins and are not internally connected to the die. cy7c133...
Description 2-Mbit (64K x 32) Flow-through SRAM with NoBL(TM) Architecture

File Size 303.00K  /  13 Page

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    Mitsubishi Electric Corporation
Part No. M5M5Y816WG-85HI
OCR Text 0.2 8388608 -bit (524288-word by 16-bit) cmos static ram mitsubishi lsis preliminary notice: this is not a final specification. some parame...18m cmos technology. the m5m5y816 is suitable for memory applications where a simple interfacing ,...
Description 8388608-BIT (524288-WORD BY 16-BIT) CMOS STATIC RAM

File Size 92.81K  /  10 Page

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    CY7C1347G-200AXC CY7C1347G-133BGXC CY7C1347G-166AXC CY7C1347G-133AXC CY7C1347G-250AXC

Cypress Semiconductor
Part No. CY7C1347G-200AXC CY7C1347G-133BGXC CY7C1347G-166AXC CY7C1347G-133AXC CY7C1347G-250AXC
OCR Text ...ximum access time 2.6 2.8 3.5 4.0 ns maximum operating current 325 265 240 225 ma maximum cmos standby current 40 40 40 40 ma note 1. for be...18m nc/9m a a a a a a a dqp b dq b dq b v ddq v ssq dq b dq b dq b dq b v ssq v ddq dq b dq b v ss n...
Description 4-Mbit (128 K x 36) Pipelined Sync SRAM Asynchronous output enable

File Size 630.36K  /  24 Page

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    SGS Thomson Microelectronics
Part No. AN1556
OCR Text ...his device is manufactured on a 0.18 m process. the block organization consists of fifteen 64 kbyte, one 32 kbyte, two 8 kbyte and one 16 k...18m technol- ogy and is available with the same 70ns access time as was already available for the m2...
Description DESIGN-IN OF THE M29F800D 8MBIT FLASH MEMORY

File Size 24.69K  /  4 Page

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    SGS Thomson Microelectronics
Part No. AN1457
OCR Text ...le with access times of 70ns (3.0 to 3.6v) and 90ns (2.7 to 3.6v) in the temperature range C40 to 85c. the "d" suffix in the sales type indicates that the device is man- ufactured with a 0.18m process while the "b" suffix on the smaller mem...
Description DESIGN-IN OF THE M29W320D 32 MBIT FLASH MEMORY

File Size 26.57K  /  4 Page

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    Matsshita / Panasonic
Part No. MAZ3000SERIES
OCR Text 0.65 0.15 2.8 - 0.3 1.5 + 0.2 Unit : mm 0.65 0.15 + 0.25 - 0.05 For stabilization of power supply 0.95 1.1 - 0.1 Paramet...18M or 18H 18L 18M 18H 20L or 20M or 20H 20L or 20M or 20H 20M 20H 22L or 22M or 22H 22L 22M 22H 24L...
Description Zener Diodes

File Size 110.75K  /  7 Page

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For 0.18m Found Datasheets File :: 947    Search Time::1.484ms    
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