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-10.8a Datasheet PDF File

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				Micross Components
Part No.	ICE60N160B
OCR Text	...9a t d(on) turn-on delay time - 10 - ns v ds = 480v, v gs = 10v, i d = 23.8a, r g = 4? (external) t r rise time - 5 - t d(of ) turn-of delay time - 67 - t f fall time - 4.5 - symbol parameter values unit conditions min typ max gate cha...
Description	N-Channel Enhancement Mode MOSFET
File Size	762.00K / 4 Page	View it Online	Download Datasheet

				SUMITOMO
Part No.	ELM5964-4PS
OCR Text	... power gain at 1db g.c.p. g 1db 10.0 11.5 - db drain current i dsr - 1100 1300 ma power added efficiency h add - 37 - % gain flatness d g - ...8a jul. 2010 2 c - band internally matched fet elm5964 - 4ps note ? this device will n...
Description	C-Band Internally Matched FET
File Size	903.99K / 16 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXM64N02X ZXM64N02XTA ZXM64N02XTC
OCR Text	...ounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient The...8A, V GS=0V T j=25C, I F=3.8A, di/dt= 100A/s t d(on) tr t d(off) tf Qg Q gs Q gd 5.7 9.6 28.3 11.6 1...
Description	N-channel MOSFET 20V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	179.82K / 7 Page	View it Online	Download Datasheet

				SUMITOMO
Part No.	ELM5964-16F
OCR Text	...bm ( typ) ? high gain: g1db=10.0db (typ.) ? high pae: ? add=40 %( typ.) ? frequency band: 5.9~6.4ghz ? impedance matched ...8a(typ.) f = 5.9 ~ 6.4 ghz 41.5 42.5 - dbm power gain at 1db g.c.p . g 1db 9.0 1...
Description	C-Band Internally Matched FET
File Size	318.25K / 11 Page	View it Online	Download Datasheet

				HuaXinAn Electronics CO.,LTD HuaXinAn Electronics CO...
Part No.	018-220 012-220 048-250 005-220 003-250 N68F N68FA
OCR Text	10.1 12.3 slim type and small occupying area can offer high density p .c.b. technique. employment of suitable plastic materials to be appli...8a dash numbers coil voltage vdc coil resistance 10% operate time ms relea se tim e ms coil paramet...
Description	Slim type and small occupying area can offer high density P.C.B. technique Slim type and small occupying area can offer high density P.C.B. technique.
File Size	482.29K / 1 Page	View it Online	Download Datasheet

				Zetex Semiconductor PLC ZETEX[Zetex Semiconductors]
Part No.	ZXMC3A18DN8 ZXMC3A18DN8TA ZXMC3A18DN8TC
OCR Text	...0 20 7.6 6.1 5.8 37 3.6 37 1.25 10 PD 1.8 14 2.1 17 -55 to +150 UNIT -30 20 -6.3 -5.0 -4.8 -30 tbd 30 V V A A A A A A W mW/C W mW/C W mW/C C...8A V GS = 4.5V, I D = 5.3A S V DS = 15V, I D = 5.8A 1800 289 178 pF pF pF V DS = 25V,...
Description	COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET 7.6 A, 30 V, 0.025 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET N & P-channel MOSFET
File Size	183.69K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IPP65R095C7
OCR Text	...tor ipp65r095c7 rev.2.0,2013-10-11 final data sheet to-220 1description coolmos?isarevolutionarytechnologyforhighvoltagepowe...8a, t j =25c v gs =10v, i d =11.8a, t j =150c gate resistance r g - 0.9 - w f =1mhz,opendrain t...
Description	LED Driver IC and Lighting IC
File Size	1,585.67K / 15 Page	View it Online	Download Datasheet

				Alpha & Omega Semiconductors
Part No.	D9N40
OCR Text	...v dss / ? tj 0.4 v/ o c 1 10 i gss gate-body leakage current 100 n v gs(th) gate threshold voltage 3.4 4 4.5 v r ds(on) 0.64 0.8 ? g ...8a,di/dt=100a/ s,v ds =100v maximum body-diode pulsed current input capacitance output capacitance ...
Description	AOD9N40
File Size	341.07K / 6 Page	View it Online	Download Datasheet

				ZETEX[Zetex Semiconductors]
Part No.	ZXMN3A03E6 ZXMN3A03E6TA ZXMN3A03E6TC
OCR Text	...ounted on FR4 PCB measured at t 10 secs. (c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maxi...8A V GS =4.5V, I D =6.8A V DS =10V,I D =7.8A SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Static Drain-...
Description	30V N-CHANNEL ENHANCEMENT MODE MOSFET
File Size	924.08K / 7 Page	View it Online	Download Datasheet

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