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				STMicroelectronics N.V.
Part No.	IRF530
OCR Text	...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 16 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =8a 5 8 s c iss c oss c rss input capacitance output ...
Description	N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOSFET) N沟道增强模式功率MOS晶体管（不适用沟道增强模式功率MOSFET的）
File Size	53.13K / 6 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	P7NA40
OCR Text	...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 6.5 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =3.5a 3.1 4.6 s c iss c oss c rss input capacitance ...
Description	Search --To STP7NA40
File Size	232.99K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	P6NA60FI
OCR Text	...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 6.5 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =3a 3.5 5.6 s c iss c oss c rss input capacitance ou...
Description	Search --To STP6NA60FI
File Size	237.79K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB80NF55L-06
OCR Text	...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 80 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward...e 10 10.4 0.393 0.409 g 4.88 5.28 0.192 0.208 l 15 15.85 0.590 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 ...
Description	N-CHANNEL POWER MOSFET
File Size	157.56K / 8 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP5NB40 STP5NB40FP
OCR Text	...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 4.7 a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =2.3a 1.3 2.4 s c iss c oss c rss input capacitance ...
Description	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
File Size	252.81K / 7 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP5NB80
OCR Text	...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g ...
Description	N-CHANNEL PowerMESH MOSFET
File Size	137.52K / 9 Page	View it Online	Download Datasheet

				LSI Corporation
Part No.	CWDSP1670
OCR Text	...rface xrdi[15:0] xrdo[15:0] sel_xr_rd[1:0] xrw3 _n -0_n xrr3 _n -0_n external registers interface ext_scan_in ext_scan_out ext_scan_ctl ext_...e memory wait state input when this signal is asserted at reset, the m6 bit in the r3 register is cl...
Description	An OakDSPCore-based、Application-Specific Integrated Circuit (ASIC)(基于OakDSP内核芯片的特殊用途集成电
File Size	257.25K / 92 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STP8NA50FI
OCR Text	...ate drain current v ds >i d(on) xr ds(on)max v gs =10v 8a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward transconductance v ds >i d(on) xr ds(on)max i d =4a 4.5 6.5 s c iss c oss c rss input capacitance outpu...
Description	N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
File Size	206.41K / 10 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics N.V.
Part No.	STB5NB60
OCR Text	...te drain current v ds >i d(o n) xr ds(on )ma x v gs =10v 5a dynamic symbol parameter test conditions min. typ. max. unit g fs ( * )forward t...e 2.44 2.64 0.096 0.104 e 10 10.28 0.393 0.404 l 13.2 13.5 0.519 0.531 l1 3.48 3.78 0.137 0.149 l2 1...
Description	N-Channel 600V-1.8Ω-5A- I2PAK PowerMESHTM MOSFET(N沟道MOSFET) N沟道600V.8Ω- 5A I2PAK PowerMESHTM MOSFET的（不适用沟道MOSFET的）
File Size	86.01K / 8 Page	View it Online	Download Datasheet

For xr-e Found Datasheets File :: 1072 Search Time::1.266ms
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