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SiGe
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| Part No. |
PA2423
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| OCR Text |
...aracteristics
Test Conditions: sige PA2423L-EV: VCC0 = VCC1 = VCC2 = VRAMP = 3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25C, f = 2.45GHz, input and output externally matched to 50 unless otherwise noted
POUT, ICC vs Supply Voltage
24 23 150... |
| Description |
Amplifier
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| File Size |
198.04K /
10 Page |
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it Online |
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SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
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| Part No. |
PA2423MB-EV PA2423 PA2423MB
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| OCR Text |
...eristics
Test Conditions using sige PA2423MB-EV: VCC0=VCC1=VCC2=VRAMP=3.3V, VCTL = 3.3V, PIN = +2 dBm, TA = 25C, f = 0 2.45GHz, Input and Output externally matched to 50, unless otherwise noted.
Pout vs Frequency
140.00
Icc vs Frequ... |
| Description |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
2.4 GHz Bluetooth Class 1 Power Amplifier IC Production Information
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| File Size |
211.29K /
10 Page |
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it Online |
Download Datasheet |
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SiGe Semiconductor, Inc...
SIGE[SiGe Semiconductor, Inc.]
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| Part No. |
PA2423L_06 PA2423L PA2423L-EV PA2423L-R PA2423L-06
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| OCR Text |
...aracteristics
Test Conditions: sige PA2423L-EV: VCC0 = VCC1 = VCC2 = VRAMP = 3.3 V, VCTL = 3.3 V, PIN = +2 dBm, TA = 25 C, f = 2.45 GHz, input and output externally matched to 50 unless otherwise noted
POUT, ICC vs Supply Voltage
24 23... |
| Description |
RangeCharger 2.4 GHz Power Amplifier IC
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| File Size |
197.12K /
10 Page |
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it Online |
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SiGe Semiconductor Inc.
SIGE[SiGe Semiconductor, Inc.]
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| Part No. |
PA2423G-EV PA2423 PA2423G
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| OCR Text |
...irect die attach (Flip-chip) on sige Applications Board. For wire bonded applications there may be some degradation in performance due to effects of bond wires and interconnect.
DOC # 05PDS003
Rev 5
07/26/2001
Page 3
PA2423G
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| Description |
2.4 GHz Bluetooth Class 1 Power Amplifier IC Preliminary Information
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| File Size |
214.45K /
9 Page |
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it Online |
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Maxim Integrated Products, Inc.
MAXIM INTEGRATED PRODUCTS INC
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| Part No. |
MAX2320 MAX2321 MAX2322 MAX2324 MAX2325 MAX2326 MAX2327 MAX2329 MAX2320EUP MAX2327EUP MAX2321EUPT
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| OCR Text |
sige Dual-Band LNA/Mixer ICs
Features
o Ultra-High Linearity at Ultra-Low Current and Noise o +2.7V to +3.6V Operation o Pin-Selectable Low-Gain Mode Reduces Gain by 17dB and Current by 3mA o Pin-Selectable Paging Mode Reduces Current Dra... |
| Description |
Adjustable.High-Linearity.sige.Dual-Band.LNA/Mixer ICs
Adjustable, High-Linearity, sige Dual-Band LNA/Mixer ICs 可调、高线性度、sige、双频段、LNA/混频器IC
Adjustable, High-Linearity, sige Dual-Band LNA/Mixer ICs RF/MICROWAVE DOWN CONVERTER
Adjustable, High-Linearity, sige, Dual-Band, LNA/Mixer ICs
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| File Size |
526.59K /
28 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NESG2031M05-T1-A NESG2031M05 NESG2031M05-T1
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| OCR Text |
sige HIGH FREQUENCY TRANSISTOR
FEATURES
* * HIGH BREAKDOWN VOLTAGE sige TECHNOLOGY VCEO = 5 V (Absolute Maximum) LOW NOISE FIGURE: NF = 0.8 dBm at 2 GHz NF = 1.3 dBm at 5.2 GHz HIGH MAXIMUM STABLE GAIN: MSG = 21.5 dB at 2 GHz LOW PROFILE ... |
| Description |
NPN sige HIGH FREQUENCY TRANSISTOR
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| File Size |
572.15K /
13 Page |
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it Online |
Download Datasheet |
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Price and Availability
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