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Renesas Electronics Corporation
Yuasa Battery, Inc.
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| Part No. |
NP80N06NLG NP80N06NLG-S18-AY NP80N06PLG NP80N06PLG-E1B-AY NP80N06PLG-E2B-AY NP80N06MLG-S18-AY NP80N06MLG-S18-AYNOTE NP80N06NLG-S18-AYNOTE NP80N06PLG-E1B-AYNOTE
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| OCR Text |
...s, Duty Cycle 1% 2. Tch 150C, RG = 25
THERMAL RESISTANCE
Channel to Case Thermal Resistance Channel to Ambient Thermal Resistance Rth...8.6
m
6.2
8.3
m
RDS(on)2
VGS = 4.5 V, ID = 35 A NP80N06MLG, NP80N06NLG VGS = 4.5 V... |
| Description |
MOS FIELD EFFECT TRANSISTOR
80 A, 60 V, 0.0083 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB LEAD FREE, MP-25ZP, TO-263, 3 PIN
SWITCHING N-CHANNEL POWER MOS FET
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| File Size |
344.85K /
12 Page |
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ST Microelectronics
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| Part No. |
STD10NM60N STP10NM60N STu10NM60N
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| OCR Text |
...Symbol Ciss Coss Crss Co(tr)(1) Rg Qg Qgs Qgd
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equiva...8 A, VGS = 10 V (see Figure 18)
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110 6 19 3 10
-
pF nC nC nC
1. Coss eq. time relat... |
| Description |
Power MOSFETs
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| File Size |
1,039.54K /
17 Page |
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ST Microelectronics
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| Part No. |
STW34NM60N
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| OCR Text |
...td(on) tr td(off) tf Qg Qgs Qgd Rg
Dynamic
Parameter Input capacitance Output capacitance Reverse transfer capacitance Equivalent output...8 2.9 15.9 9 3 4.4 2.5 2.5 0.45 0.75 1.15 1.15 4.95 2.4 10
STF34NM60N, STP34NM60N, STW34NM60N
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| Description |
Power MOSFETs
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| File Size |
517.73K /
12 Page |
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it Online |
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NEC, Corp.
NEC Corp.
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| Part No. |
2SJ603-S 2SJ603-ZJ 2SJ603-Z-AZ
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| OCR Text |
...tarting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V (TO-263, TO-220SMD)
The information in this document is subject to change withou...8 -6 -4 -2 0 40
VDS - Drain to Source Voltage - V
trr - Reverse Recovery Time - ns
-50 -40 ... |
| Description |
25 A, 60 V, 0.075 ohm, P-CHANNEL, Si, POWER, MOSFET
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RDS(on)MAX=48m ohm TO-220AB,TO-262,TO-263
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| File Size |
82.75K /
8 Page |
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NEC, Corp.
NEC Corp.
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| Part No. |
2SJ605-S 2SJ605-ZJ 2SJ605-ZJ-AZ
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| OCR Text |
...tarting Tch = 25C, VDD = -30 V, RG = 25 , VGS = -20 0 V
(TO-263, TO-220SMD)
The information in this document is subject to change wit...8 -6 -4
IAS - Single Avalanche Current - A
-100
IAS = -45 A
EAS
-10 VDD = -30 V RG = 25... |
| Description |
65 A, 60 V, 0.031 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
MOS FIELD EFFECT TRANSISTOR MOS场效应管
Pch power MOSFET 60V RonMAX=20m ohm TO-220AB,TO-262,TO-263
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| File Size |
86.08K /
8 Page |
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Infineon
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| Part No. |
ILA03N60 ILB03N60E3045A ILD03N60 ILP03N60
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| OCR Text |
...s IC 1.5A, CSnubber = 1 nF and RG 50, dv/dt of the reverse diode is within its specification. 1 Rev. 1.1 Nov-03
Power Semiconductors
...8 A T j =2 5 C T j =1 5 0 C Diode forward voltage VF V G E = 0V , I F = 3 .0 A T j =2 5 C T j =1 5 0... |
| Description |
IGBTs & DuoPacks - 3A / 600V LightMOS in TO220 FullPak
IGBTs & DuoPacks - 3A / 600V LightMOS in TO263
IGBTs & DuoPacks - 3A / 600V LightMOS in DPak
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| File Size |
310.73K /
15 Page |
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it Online |
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