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ONSEMI[ON Semiconductor]
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Part No. |
MGP15N43CL
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OCR Text |
...( (VCC = 400 V, IC = 6.5 A, , , RG = 1.0 k, L = 300 mH) ( (VCC = 10 V, IC = 6.5 A, , , RG = 1.0 k, RL = 1.0 ) td(off) tf td(on) tr QT Q1 Q2 ...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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MGP15N43CL/D Motorola ... |
Description |
Internally Clamped N-Channel IGBT Internally Clamped N-Channel IGBT 15 A, 460 V, N-CHANNEL IGBT, TO-220AB
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File Size |
67.47K /
4 Page |
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MOTOROLA[Motorola, Inc]
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Part No. |
MGP15N60u
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OCR Text |
... VGE = 15 Vdc, L = 300 mH, Vd H RG = 20 , TJ = 125C) 125 C) Energy losses include "tail" (VCC = 360 Vdc, IC = 8 0 Ad Vd 8.0 Adc, VGE = 15 Vd...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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Motorola IGBTMGP15N60u... |
Description |
Insulated Gate Bipolar Transistor
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File Size |
116.64K /
6 Page |
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MOTOROLA[Motorola, Inc]
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Part No. |
MGP21N60E
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OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...141, Japan. 81-3-5487-8488
MfaxTM: RMFAX0@email.sps.mot.com - TOuCHTONE 602-244-6609 ASIA/PACIFIC... |
Description |
Insulated Gate Bipolar Transistor
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File Size |
123.84K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
MGW12N120
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OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT Thermal Resistance -- Junction to Ambient Maximum Le...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
Motorola IGBT Device Data
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Description |
Insulated Gate Bipolar Transistor N-Channel Insulated Gate Bipolar Transistor 20 A, 1200 V, N-CHANNEL IGBT, TO-247AE
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File Size |
133.06K /
5 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MHPM7A10E60DC3
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OCR Text |
...1100T3 MC33153 MBRS1100T3 120 W RG(on) 20 W RG(off) MBRS1100T3
-20
-10
0
10
20
30
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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Motorola MHPM7A10E60DC... |
Description |
Hybrid Power Module
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File Size |
166.45K /
6 Page |
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MOTOROLA[Motorola, Inc]
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Part No. |
MHPM7A15S120DC3
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OCR Text |
...= 125C
+15 V MBRS130T3 160 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola I...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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MHPM7A15S120DC3/D Moto... |
Description |
Hybrid Power Module
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File Size |
162.32K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MHPM7A20E60DC3
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OCR Text |
...1100T3 MC33153 MBRS1100T3 120 W RG(on) 20 W RG(off) MBRS1100T3
-20
-10
0
10
20
30
VGE, GATE-TO-EMITTER VOLTAGE (VOLTS)
...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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Motorola MHPM7A20E60DC... |
Description |
Hybrid Power Module
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File Size |
167.70K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MHPM7A25S120DC3
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OCR Text |
... = 125C
+15 V MBRS130T3 68 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola I...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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MHPM7A25S120DC3/D Moto... |
Description |
Hybrid Power Module
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File Size |
162.91K /
6 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MHPM7A5S120DC3
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OCR Text |
...= 125C
+15 V MBRS130T3 180 W RG(on) 20 W RG(off) MBRS130T3 MBRS130T3
MC33153
Figure 5. Recommended Gate Drive Circuit
Motorola I...141, 4-32-1 Nishi-Gotanda, Shagawa-ku, Tokyo, Japan. 03-5487-8488
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Motorola MHPM7A5S120DC... |
Description |
Hybrid Power Module
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File Size |
162.76K /
6 Page |
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it Online |
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ONSEMI[ON Semiconductor]
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Part No. |
MTP20N15E
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OCR Text |
... ID = 20 Adc, VGS = 10 Vdc, Vdc RG = 9.1 ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOuRCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (Note 1.) ...141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com ... |
Description |
Power MOSFET 20 Amps, 150 Volts N-Channel TO-220
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File Size |
37.86K /
4 Page |
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it Online |
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