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				STMicroelectronics
Part No.	STB80N4F6AG
OCR Text	... a i dm (1) drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 70 w i av avalanche current, repetitive or not - repetitive (pulse width limited by t j max) 40 a e as single pulse avala...
Description	High avalanche ruggedness
File Size	715.57K / 15 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFW9624 SFW9624TM
OCR Text	... (t c =100 o c) drain current-pulsed gate-to-source voltage single pulsed avalanche energy avalanche current repetitive avalanche energy peak ...
Description	Advanced Power MOSFET 250V P-Channel A-FET
File Size	254.79K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFW9620TM
OCR Text	... (t c =100 o c) drain current-pulsed gate-to-source voltage single pulsed avalanche energy avalanche current repetitive avalanche energy peak ...
Description	200V P-Channel A-FET Advanced Power MOSFET
File Size	252.31K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFW9614TM
OCR Text	... (t c =100 o c) drain current-pulsed gate-to-source voltage single pulsed avalanche energy avalanche current repetitive avalanche energy peak ...
Description	250V P-Channel A-FET
File Size	286.04K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	SFW9610 SFI9610TU
OCR Text	... (t c =100 o c) drain current-pulsed gate-to-source voltage single pulsed avalanche energy avalanche current repetitive avalanche energy peak ...
Description	Advanced Power MOSFET 200V P-Channel A-FET
File Size	249.92K / 7 Page	View it Online	Download Datasheet

				Fairchild Semiconductor
Part No.	FDD6N50TM-WS
OCR Text	... 6 3.8 a a i dm drain current - pulsed (note 1) 24 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 270 mj i ar avalanche current (note 1) 6a e ar repetitive avalanche energy (note 1) 8.9 mj dv/dt peak diode r...
Description	N-Channel UniFETTM MOSFET500 V, 6 A, 900 mΩ
File Size	448.47K / 9 Page	View it Online	Download Datasheet

				Infineon Technologies A...
Part No.	SPB07N60S5
OCR Text	...5 c t c = 100 c i d 7.3 4.6 a pulsed drain current, t p limited by t j ma x i d p uls 14.6 avalanche energy, single pulse i d = - a, v dd = 50 v e as 230 mj avalanche energy, repetitive t ar limited by t jmax 1 ) i d = 7.3 a, ...
Description	Cool MOS Power Transistor
File Size	346.53K / 11 Page	View it Online	Download Datasheet

For pulsed Found Datasheets File :: 62657 Search Time::1.875ms
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