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				ON Semiconductor
Part No.	NVMD6P02 NVMD6P02R2G NTMD6P02R2G NTMD6P02R2SG
OCR Text	... dual features ? ultra low r ds(on) ? higher efficiency extending battery life ? logic level gate drive ? miniature dual soic ? 8 surface mo...time (v dd = ? 10 vdc, i d = ? 1.0 adc, v gs = ? 10 vdc, r g = 6.0 ) t d(on) ? 15 25 ns ...
Description	Power MOSFET 6 A, 20 V, P?Channel SOIC?, Dual
File Size	119.53K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	NTQD4154Z
OCR Text	...f circuit connection ? low r ds(on) extending battery life ? esd protected gate ? pb ? free package is available applications ? li ? ion b...time t d(on) v gs = 4.5 v, v dd = 10 v, i d = 7.5 a, r g = 6.0 0.2 s rise time t...
Description	Power MOSFET 20 V, 7.5 A, Common-Drain, Dual N-Channel TSSOP-8
File Size	189.03K / 6 Page	View it Online	Download Datasheet

				ON SEMICONDUCTOR
Part No.	NTQD4154Z
OCR Text	...f circuit connection ? low r ds(on) extending battery life ? esd protected gate applications ? li?ion battery protection circuit ? power ma...time t d(on) 0.2 s rise time t r v gs = 4.5 v, v dd = 10 v, 0.5 turn?off delay time t d(o...
Description	7.5 A, 20 V, 0.019 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
File Size	65.73K / 6 Page	View it Online	Download Datasheet

				FreesCale
Part No.	MC4828
OCR Text	... notes a. surface mounted on 1 x 1 fr4 board. b. pulse width limited by maximum junction temperature power dissipation a t <= ...time t d(on) 3 rise time t r 6 turn-off delay time t d(off) 17 fall time t f 5 input capacitance c i...
Description	N-Channel 60-V (D-S) MOSFET
File Size	338.60K / 5 Page	View it Online	Download Datasheet


Part No.	KM644002BJ-12000
OCR Text	... to your requests and questions on the parameters of this device. if you have any ques- tions, please contact the samsung branch office nea...time 10,12,15ns(max.) ? low power dissipation standby (ttl) : 50ma(max.) ...
Description	1M X 4 STANDARD SRAM, 12 ns, PDSO32
File Size	186.11K / 8 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	IDC05S60CE
OCR Text	...y ? no temperature influence on the switching behavior ? no forward recovery ? high surge current capability a c chip typ...time 1) t c i f <=i f,max d i /d t = 200a/ s v r =400v t vj = 150 c <10 ns v r =...
Description	2nd generation thinQ!TM SiC Schottky Diode
File Size	102.30K / 4 Page	View it Online	Download Datasheet

				TY Semiconductor Co., Ltd
Part No.	FDN357N
OCR Text	... 75 c/w 1.9 a, 3 0 v, ?r ds(on ) = 0.09 0 w @ v gs = 4.5 v r ds(on ) = 0.06 0...time v dd = 10 v, i d = 1 a, v gs = 10 v, r gen = 6 w 5 10 ns t r turn - on rise time ...
Description	SuperSOT-3
File Size	275.21K / 2 Page	View it Online	Download Datasheet

				Panasonic Semiconductor
Part No.	DA2DF62
OCR Text	on japanese industrial standard jis c 7031 measuring methods for diodes. 2. a bsolute fre q uenc y of in p ut and out p ot is 10 mh z 3. 1...time 1 non-repetitive peak forward surge current * to-220d-b1 unit: mm 1.5 +0 - 0.4 4.2 0.2 13...
Description	Silicon epitaxial planar type For high frequency rectification
File Size	422.22K / 3 Page	View it Online	Download Datasheet

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