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Advanced Micro Devices, Inc. STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
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Part No. |
BULB128D-1 BULB128D
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OCR Text |
...CAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I CEO V (BR)EBO Parameter Collector Cut-off Current (V BE = 0 V...1 A 0.2 A 0.5 A 1A
0.7 1 1.5 0.5 1.1 1.2 1.3 10 12 32 2.5
V V V V V V V
V BE(sat)
Base-... |
Description |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR 高压快速开关NPN电源晶体
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File Size |
209.60K /
7 Page |
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it Online |
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意法半导
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Part No. |
STD2NB80-1
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OCR Text |
...ng purpose 2.5 100 1 275 o c/w oc/w o c/w o c avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by t j max) 1.9 a e as single pulse avalanche energy (star... |
Description |
N-Channel 800V-4.6Ω-1.9A- IPAK PowerMESHTM MOSFET(N沟道MOSFET)
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File Size |
48.10K /
5 Page |
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Analog Devices, Inc.
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Part No. |
ADA4004-1
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OCR Text |
...precision, 40 v offset, 0.7 v/oc drift, 12 mhz bandwidth, and low 1.7 ma/amplifier supply current. the ada4004 is designed on the high performance i polar? process, enabling improvements such as reduced noise and power consumption, i... |
Description |
1.8 nV/Hz, 36 V Precision Single and Dual Amplifier
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File Size |
78.22K /
4 Page |
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it Online |
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ST Microelectronics
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Part No. |
STD100NH02L-1
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OCR Text |
...rating area 4. Starting TJ = 25 oC, ID = 30A, VDD = 15V
Table 2.
Symbol RthJC RthJA Tl
Thermal data
Parameter Thermal resistance jun...1.5 100 275 Unit C/W C/W C
3/16
Electrical characteristics
STD100NH02L
2
Electrical ... |
Description |
N-CHANNEL POWER MOSFET
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File Size |
474.17K /
16 Page |
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it Online |
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Price and Availability
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