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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA13H3340M_06 RA13H3340M RA13H3340M-101 RA13H3340M06
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ... |
Description |
RoHS Compliance , 330-400MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
92.90K /
8 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA13H4047M_06 RA13H4047M RA13H4047M-101 RA13H4047M06
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ... |
Description |
RoHS Compliance , 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
93.46K /
8 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
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Part No. |
RA13H4452M-E01 RA13H4452M RA13H4452M-01
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OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, V DD=12.5V and Pin=50mW each stage transistor operating conditions are: Stage 1st 2nd Pin (W) 0.05 2.0 Pout (W) 2.0 13.0 Rth(ch-case) (C... |
Description |
440-520MHz 13W 12.5V MOBILE RADIO
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File Size |
63.54K /
9 Page |
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Mitsubishi Electric Semicon... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA13H4452M_06 RA13H4452M RA13H4452M-101 RA13H4452M06
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OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=13W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)... |
Description |
RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
91.50K /
8 Page |
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it Online |
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Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA18H1213G_06 RA18H1213G RA18H1213G-101 RA18H1213G06
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=18W, VDD=12.5V and Pin=200mW each stage transistor operating conditions are: IDD @ T=20% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W)... |
Description |
RoHS Compliance , 1.24-1.30GHz 18W 12.5V, 3 Stage Amp. For MOBILE RADIO
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File Size |
105.59K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H0608M_06 RA30H0608M RA30H0608M-101 RA30H0608M06
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OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)... |
Description |
RoHS Compliance , 66-88MHz 30W 12.5V, 2 stage Amp. for MOBILE RADIO
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File Size |
95.56K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H1317M_06 RA30H1317M RA30H1317M-101 RA30H1317M06
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ... |
Description |
RoHS Compliance , 135-175MHz 30W 12.5V 2 Stage Amp. For MOBILE RADIO
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File Size |
91.18K /
8 Page |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H1721M-101 RA30H1721M
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ... |
Description |
RoHS Compliance , 175-215MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
91.23K /
8 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H2127M_06 RA30H2127M RA30H2127M-101 RA30H2127M06
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OCR Text |
... the transistor chips which can lift off the bond wires). Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (W) (W) (V) (C/W) (A)... |
Description |
RoHS Compliance , 210-270MHz 30W 12.5V, 2 Stage Amp. For MOBILE RADIO
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File Size |
89.74K /
8 Page |
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it Online |
Download Datasheet
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
RA30H3340M_06 RA30H3340M RA30H3340M-101 RA30H3340M06
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OCR Text |
... the transistor chips which can lift off the bond wires).
Thermal Design of the Heat Sink: At Pout=30W, VDD=12.5V and Pin=50mW each stage transistor operating conditions are: IDD @ T=40% VDD Pout Rth(ch-case) Pin Stage (C/W) (A) (W) (W) ... |
Description |
RoHS Compliance , 330-400MHz 30W 12.5V, 3 Stage Amp. For MOBILE RADIO
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File Size |
70.27K /
7 Page |
View
it Online |
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