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P6KE440 ST2SA FP1100A HCTS245T AN1759 25ETTS CVCO3 PA3013
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    IRFD110

Intersil Corporation
Part No. IRFD110
OCR Text ... - 3.0 - nc input capacitance c iss v gs = 0v, v ds = 25v, f = 1mhz (figure 10) - 135 - pf output capacitance c oss -80- pf reverse transfer capacitance c rss -20- pf internal drain inductance l d measured from the drain lead, 2mm (0.08in...
Description 1A/ 100V/ 0.600 Ohm/ N-Channel Power MOSFET

File Size 79.17K  /  6 Page

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    2SK3354-ZJ

NEC
Part No. 2SK3354-ZJ
OCR Text ...= 4 v, i d = 42 a) ? low c iss : c iss = 6300 pf typ. ? built-in gate protection diode absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 60 v gate to source voltage (v ds = 0 v) v gss(ac) 20 v drain...
Description Nch power MOS FET

File Size 90.68K  /  8 Page

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    APT38F80B209 APT38F80L

Microsemi Corporation
Microsemi, Corp.
Part No. APT38F80B209 APT38F80L
OCR Text ...atly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi an...
Description N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
N-Channel FREDFET 41 A, 800 V, 0.24 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AB
   N-Channel FREDFET

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    APT38F50J09

Microsemi Corporation
Part No. APT38F50J09
OCR Text ...atly reduced ratio of c rss /c iss result in excellent noise immunity and low switching loss. the intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low emi an...
Description N-Channel FREDFET
   N-Channel FREDFET

File Size 227.64K  /  4 Page

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    NXP Semiconductors N.V.
Part No. 2N7002F215
OCR Text ...gate-drain charge - 0.27 - nc c iss input capacitance v gs =0v; v ds = 10 v; f = 1 mhz; see figure 14 - 3150pf c oss output capacitance - 6.8 30 pf c rss reverse transfer capacitance - 3.5 10 pf t on turn-on time v ds =50v; r l = 250 w ; v ...
Description N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

File Size 86.33K  /  12 Page

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    TDA7540B

STMicroelectronics
Part No. TDA7540B
OCR Text iss) features fm-part rf agc generation by rf and if detection i/q mixer for 1st fm if 10.7mhz with image rejection mixer for 2nd if 450khz internal 450khz bandpass filter with bandwidth control by iss fully integrated fm-demodulato...
Description AM/FM Car Radio Tuner IC with Stereo Decoder and Intelligent Selectivity System (iss)

File Size 1,100.02K  /  75 Page

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    Fairchild Semiconductor, Corp.
Part No. R114OQ331BTL R114OQ331BTR R114OQ301BTR R114OQ201BTR R114OQ201BTL R114OQ301BTL R114OQ401DTR R114OQ301DTR R114OQ301DTL R114OQ401DTL R114OQ401BTR R114OQ321BTR R114OQ221BTR R114OQ321BTL R114OQ321DTL R114OQ211BTR R114OQ211DTL R114OQ211DTR R114OQ221BTL R114OQ211BTL R114OQ221DTL R114OQ241BTR
OCR Text ...voltage v in (v) supply current iss(ua) r1140q281x 0 10 20 30 40 50 60 70 80 90 123456 input voltage v in (v) supply current iss(ua) ( c ) ( c ) ( c ) rev. 1.10 - 10 - r1140q401x 0 10 20 30 40 50 60 70 80 90 123456 input voltage ...
Description Analog IC 模拟IC

File Size 405.90K  /  15 Page

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    NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D

ON Semiconductor
Part No. NTMD3P03R2-D NTMD3P03R2 NTMD3P03R2/D
OCR Text ...t capacitance (v 24 vd v 0 vd c iss 520 750 pf output capacitance (v ds = 24 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 170 325 reverse transfer capacitance f = 1 . 0 mhz) c rss 70 135 switching characteristics (notes 5. and 6.) turno...
Description Power MOSFET -3.05 Amps-30 Volts
Power MOSFET -3.05 Amps, -30 Volts Dual P?Channel SO(-3.05 A, -30 V,双P通道,SO-8封装的功率MOSFET)
Power MOSFET -3.05 Amps, -30 Volts Dual P-Channel SO-8

File Size 80.71K  /  12 Page

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    NTMS3P03R2-D NTMS3P03R2

ON Semiconductor
Part No. NTMS3P03R2-D NTMS3P03R2
OCR Text ...t capacitance (v 24 vd v 0 vd c iss 520 750 pf output capacitance (v ds = 24 vdc, v gs = 0 vdc, f = 1.0 mhz ) c oss 170 325 reverse transfer capacitance f = 1 . 0 mhz) c rss 70 135 switching characteristics (notes 6. & 7.) turnon ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3.86A I(D) | SO
Power MOSFET -3.05 Amps, -30 Volts P-Channel SO-8

File Size 78.28K  /  12 Page

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