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  id-19a Datasheet PDF File

For id-19a Found Datasheets File :: 1933    Search Time::2.047ms    
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    IRLML6401 IRLML6401TR IRLML6401PBF

International Rectifier
Part No. IRLML6401 IRLML6401TR IRLML6401PBF
OCR Text ...Maximum Ratings Parameter VDS ID @ TA = 25C ID @ TA= 70C IDM PD @TA = 25C PD @TA = 70C EAS VGS TJ, TSTG Drain- Source Voltage Continuous D...1.3 0.8 0.01 33 8.0 -55 to + 150 Units V A W W/C mJ V C Thermal Resistance Parameter RJA M...
Description -12V Single P-Channel HEXFET Power MOSFET in a Micro 3 package
HEXFETPower MOSFET
4.3 A, 12 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET

File Size 138.86K  /  9 Page

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    STH8NB90FI STH8NB90 H8NB90FI STW8NB90

STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. STH8NB90FI STH8NB90 H8NB90FI STW8NB90
OCR Text ...V RDS(on) < 1.45 < 1.45 ID 8A 5A TYPICAL RDS(on) = 1.1 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 3 2 1 3 2 1 DESCRIPTION Using the latest high vol...
Description N-CHANNEL 900V - 1.1 OHM - 8A - TO-247/ISOWATT218 POWERMESH MOSFET
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh MOSFET
N-CHANNEL 900V - 1.1 ohm - 8 A TO-247/ISOWATT218 PowerMesh⑩ MOSFET
N-CHANNEL MOSFET

File Size 310.59K  /  9 Page

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    VB027SP 1072

意法半导
STMICROELECTRONICS[STMicroelectronics]
Part No. VB027SP 1072
OCR Text Id(on) 130mA PRIMARY COIL VOLTAGE INTERNALLY SET COIL CURRENT LIMIT INTERNALLY SET s LOGIC LEVEL COMPATIBLE INPUT s DRIVING CURRENT QUASI...1 PowerSO-10TM voltage, high current interface in advanced electronic ignition system. BLOC...
Description HIGH VOLTAGE IGNITION COIL DRIVER POWER I.C.
From old datasheet system

File Size 59.66K  /  7 Page

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    FDS6986S FDS6690A FDS6984S

FAIRCHILD[Fairchild Semiconductor]
Part No. FDS6986S FDS6690A FDS6984S
OCR Text ...imum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage TA = 25C unless otherwise noted Parameter Q2 30 (Note 1a) Q1 30 16 6.5 20 2 1.6 1 0.9 -55 to +150 Units V V A W - Continuous - Pulsed Power...
Description Dual Notebook Power Supply N-Channel PowerTrench SyncFET⑩
Dual Notebook Power Supply N-Channel PowerTrench SyncFET?/a>

File Size 196.87K  /  9 Page

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    IRF5801

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF5801
OCR Text ...S 200V RDS(on) max 2.2 ID 0.6A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance I...1 6 A D D 2 5 D G 3 4 S T op V iew TSOP-6 Absolute Maximum Ra...
Description Power MOSFET(Vdss=200V, Rds(on)max=2.2ohm, Id=0.6A) 功率MOSFET(减振钢板基本\u003d 200V的电压,的Rdson)最大值\u003d 2.2ohm,身份证\u003d 0.6A的)
Power MOSFET(Vdss=200V/ Rds(on)max=2.2ohm/ Id=0.6A)

File Size 119.47K  /  8 Page

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    IRF5802 IRF5802TR

IRF[International Rectifier]
Part No. IRF5802 IRF5802TR
OCR Text ...SFET RDS(on) max 1.2@VGS = 10V ID 0.9A VDSS 150V Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Character...
Description 150V Single N-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
Power MOSFET(Vdss=150V, Id=0.9A)
Power MOSFET(Vdss=150V/ Id=0.9A)
0.9 A, 150 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 125.73K  /  8 Page

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    IRFPC50A

IRF[International Rectifier]
Part No. IRFPC50A
OCR Text ...S 600V Rds(on) max 0.58 ID 11A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dy...1.4 30 4.9 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typ...
Description Power MOSFET(Vdss=600V, Rds(on)max=0.58ohm, Id=11A)

File Size 94.48K  /  8 Page

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    IRFPC50LC

IRF[International Rectifier]
Part No. IRFPC50LC
OCR Text .... VDSS = 600V RDS(on) = 0.60 ID = 11A Absolute Maximum Ratings Parameter ID @ T C = 25C ID @ T C = 100C IDM PD @T C = 25C VGS EAS IA...1.5 30 920 11 19 3.0 -55 to + 150 300 (1.6mm from case) 10 lbf*in (1.1N*m) Units A W W/C V mJ A ...
Description Power MOSFET(Vdss=600V, Rds(on)=0.60ohm, Id=11A)

File Size 282.67K  /  8 Page

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    IRFR120 IRFU120 FN2414

Intersil, Corp.
INTERSIL[Intersil Corporation]
Part No. IRFR120 IRFU120 FN2414
OCR Text ... . . . . . . . . . . . . . . . .ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL P...
Description 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
(IRFR120 / IRFU120) N-Channel Power MOSFETs
From old datasheet system

File Size 55.39K  /  7 Page

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    IRFZ34E

IRF[International Rectifier]
Part No. IRFZ34E
OCR Text ...S = 60V G S RDS(on) = 0.042 ID = 28A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to ...1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V mJ A mJ V/ns C Thermal Resistance Param...
Description N-Channel HEXFET Power MOSFET(N沟道 HEXFET 功率MOS场效应管)

File Size 116.70K  /  8 Page

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For id-19a Found Datasheets File :: 1933    Search Time::2.047ms    
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