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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ... Q1 and Q2. Power losses in the high side switch Q1, also called the Control FET, are impacted by the Rds(on) of the MOSFET, but these condu...Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 10 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.000...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ...ching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF78...Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.00001 PDM t1 t...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7807 IRF7807A IRF7807ATR IRF7807TR

IRF[International Rectifier]
Part No. IRF7807 IRF7807A IRF7807ATR IRF7807TR
OCR Text ...hing losses make them ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF78...Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1. D...
Description 8.3 A, 30 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET
Chip-Set for DC-DC Converters
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

File Size 238.61K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ... Minimizes Parallel MOSFETs for high current applications S S S G 1 8 7 A A D D D D 2 Description This new device employs ...Z thJA ) D = 0.50 0.20 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty facto...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF840AL IRF840AS IRF840ASTRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF840AL IRF840AS IRF840ASTRR
OCR Text ... Uninterruptible Power Supply l High Speed Power Switching l VDSS 500V RDS(on) max 0.85 ID 8.0A Benefits Low Gate Charge Qg ...Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.000...
Description TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 500V五(巴西)直| 8A条(丁)|63AB
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) 功率MOSFET(减振钢板基本\u003d 500V及的Rds(on)最大值\u003d 0.85ohm,身份证\u003d 8.0A
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 125.49K  /  10 Page

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    IRF840A

IRF[International Rectifier]
Part No. IRF840A
OCR Text ... Uninterruptable Power Supply l High speed power switching Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, ...Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 P DM t1 t2 SINGLE PULSE (THERMAL RESPONSE) 0.000...
Description Power MOSFET(Vdss=500V/ Rds(on)max=0.85ohm/ Id=8.0A)
Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A)
Power MOSFET(Vdss=500V Rds(on)max=0.85ohm Id=8.0A)

File Size 87.92K  /  8 Page

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    IRF840B IRFS840B IRFS840 IRF840

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF840B IRFS840B IRFS840 IRF840
OCR Text ...hing performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency s...Z J C (t) = 0 .9 3 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C...
Description 500V N-Channel MOSFET

File Size 908.43K  /  10 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) P DM t1 t2 Notes: 1....
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...Z th J C ) 1 D = 0 .5 0 0 .2 0 0 .1 0 0 .0 5 0.1 0 .0 2 0 .0 1 S IN G L E P U L S E (T H E ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ...kage. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in ...z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd I D = -1 1A V D S = -80 V V D S = -50 V V ...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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