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				NXP Semiconductors
Part No.	ISP1183BS
OCR Text	...fer at full-speed (12 mbit/s) n high performance usb interface device with integrated serial interface engine (sie), fifo memory, transceiver, and 3.3 v voltage regulator n high speed (11.1 mbyte/s or 90 ns read/write cycle) parallel interf...
Description	Low-power Universal Serial Bus interface device with DMA
File Size	265.98K / 62 Page	View it Online	Download Datasheet

				Toshiba, Corp.
Part No.	IRFY440CMSCS
OCR Text	...tate re- sistance combined with high transconductance. hexfet transistors also feature all of the well-estab- lished advantages of mosfets, such as voltage con- trol, very fast switching, ease of paralleling and electri- cal parameter tempe...
Description	7 A, 500 V, 0.95 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257AA
File Size	162.51K / 6 Page	View it Online	Download Datasheet

				KODENSHI KOREA CORP.
Part No.	STB1277
OCR Text	... ? audio power amplifier ? high current application features ? high current : i c =-2a ? complementary pair with std1862 ordering information type no. marking package code stb1277 stb1277 to-92 absolut...
Description	PNP Silicon Transistor PNP Silicon Transistor
File Size	192.96K / 4 Page	View it Online	Download Datasheet

				NEL Frequency Controls
Part No.	SD2961
OCR Text	...omponent oscillators ? high shock resistance, to 1000g ? 3.3 volt operation ? metal lid electrically connected to ground to reduce emi ? fast rise and fall times <600 ps ...
Description	5 V, /-50 ppm, differential positive ECL fast edge crystal clock oscillator
File Size	284.75K / 2 Page	View it Online	Download Datasheet

				Vishay Intertechnology, Inc.
Part No.	RCME0224301BYS14 RCME0224300FYS14 RCME0224300BYS14 RCME0224300DYS14 RCME0224300FYS03 RCME0224301DYS03 RCME0224301BYS03
OCR Text	high precision www.vishay.com for technical questions, contact: sfer@vishay.com document number: 52010 174 revision: 06-oct-09 the rcme range of metal f ilm resistors represents a significant technical advancement in resistive technology...
Description	RESISTOR, METAL FILM, 0.125 W, 0.1 %, 10 ppm, 24300 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.125 W, 1 %, 10 ppm, 2430 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.125 W, 0.1 %, 10 ppm, 2430 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.125 W, 0.5 %, 10 ppm, 2430 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT RESISTOR, METAL FILM, 0.125 W, 0.5 %, 10 ppm, 24300 ohm, THROUGH HOLE MOUNT AXIAL LEADED, ROHS COMPLIANT
File Size	212.34K / 4 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RFPA0133 RFPA0133PCK-410 RFPA0133TR13 RFPA0133TR7 RFPA0133PCK-411
OCR Text	...0133 3 to 5 v programmable gain high efficiency power amplifier the rfpa0133 is a 3 v to 5 v high efficiency programmable gain amplifier ic. the device is manufactured on an advanced gallium arsenide hetero- junction bipolar tran...
Description	3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER
File Size	677.91K / 8 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP30E2DPK-M0
OCR Text	high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 150 ns typ ? low leak current i ces = 1 a max o...
Description	N-Channel Power MOSFET
File Size	214.26K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP30E2DPK-M0
OCR Text	high speed power switching features ? trench gate technology (g5h series) ? low collector to emitter saturation voltage v ce(sat) = 1.7 v typ ? high speed switching tf = 150 ns typ ? low leak current i ces = 1 a max o...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	153.53K / 7 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
Part No.	2SB631 2SB631K 2SD600 2SD600K
OCR Text	...ifier Applications Features * High breakdown voltage VCEO 100/120V, High current 1A. * Low saturation voltage, excellent hFE linearity. Package Dimensions unit:mm 2009B [2SB631, 631K/2SD600, 600K] ( ) : 2SB631, 631K 1 : Emitter...
Description	NPN Epitaxial Planar Silicon Transistor 100V/120V, 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amplifier Applications 100V/120V/ 1A Low-Frequency Power Amp Applications PNP/NPN Epitaxial Planar Silicon Transistors 100V/120V, 1A Low-Frequency Power Amp Applications PNP Epitaxial Planar Silicon Transistor for 100V/120V, 1A Low-Frequency Power Amplifier Applications(用于100V/120VA低频功率放大器应用的PNP硅外延平面型晶体
File Size	114.39K / 4 Page	View it Online	Download Datasheet

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