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				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRf9Z14S IRf9Z14L IRf9Z14STRL IRf9Z14STRR
OCR Text	... 1.22 (.048) 10.16 (.400) RE f . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE f. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.1...
Description	Power MOSfET(Vdss=-60V, Rds(on)=0.50ohm, Id=-6.7A) 功率MOSfET（减振钢板基本\u003d- 60V的，的Rds（on）\u003d 0.50ohm，身份证\u003d- 6.7A Power MOSfET(Vdss=-60V/ Rds(on)=0.50ohm/ Id=-6.7A) HEXfET? Power MOSfET -60V Single P-Channel HEXfET Power MOSfET in a D2-Pak package
File Size	357.87K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9Z24L IRf9Z24S IRf9Z24STRR IRf9Z24STRL
OCR Text	... 1.22 (.048) 10.16 (.400) RE f . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE f. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.1...
Description	-60V Single P-Channel HEXfET Power MOSfET in a D2-Pak package Power MOSfET(Vdss=-60V/ Rds(on)=0.28ohm/ Id=-11A) Power MOSfET(Vdss=-60V, Rds(on)=0.28ohm, Id=-11A)
File Size	307.08K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRf9Z24NL IRf9Z24NS IRf9Z24NSTRR IRf9Z24NSTRL
OCR Text	... rs s C o ss = = = = 0V , f = 1M H z C g s + C g d , Cd s S H O R T E D C gd C d s + C gd 20 I D = -7 .2 A V D S = -44 V V D S = -28 V 16 C , Capacitance (pf) 500 C iss C oss 400 12 300 8 200 C rss ...
Description	-60V Single P-Channel HEXfET Power MOSfET in a TO-262 package -55V Single P-Channel HEXfET Power MOSfET in a D2-Pak package Power MOSfET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSfET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.175ohm，身份证\u003d- 12A条） Power MOSfET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)
File Size	167.05K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9Z24N IRf9Z24NPBf
OCR Text	... rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd I D = -7.2 A V DS = -4 4V V DS = -2 8V 16 C , C a p a c ita n c e (p f ) 500 C is s C os s 400 12 300 8 200 C rs s 4 ...
Description	-55V Single P-Channel HEXfET Power MOSfET in a TO-220AB package Power MOSfET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
File Size	105.16K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9Z34L IRf9Z34S IRf9Z34STRL IRf9Z34STRR
OCR Text	... 1.22 (.048) 10.16 (.400) RE f . 6.47 (.255) 6.18 (.243) 15.49 (.610) 14.73 (.580) 5.28 (.208) 4.78 (.188) 2.79 (.110) 2.29 (.090) 2.61 (.103) 2.32 (.091) 8.89 (.350) RE f. 1.78 (.070) 1.27 (.050) 1 3 3X 1.40 (.055) 1.1...
Description	-60V Single P-Channel HEXfET Power MOSfET in a D2-Pak package Power MOSfET(Vdss=-60V/ Rds(on)=0.14ohm/ Id=-18A) Power MOSfET(Vdss=-60V, Rds(on)=0.14ohm, Id=-18A)
File Size	330.76K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRf9Z34NL IRf9Z34NS IRf9Z34NSTRL IRf9Z34NSTRR
OCR Text	... rs s C os s = = = = 0V , f = 1MH z C gs + C g d , Cds SH OR TED Cgd C ds + C gd 20 I D = -10 A V DS = -44 V V DS = -28 V 16 C , C a p a c ita n c e (p f ) 800 C i ss C os s 12 600 8 400 C rs s 200 ...
Description	Power MOSfET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSfET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXfET Power MOSfET in a D2-Pak package -55V Single P-Channel HEXfET Power MOSfET in a TO-262 package
File Size	158.36K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRf9Z34N IRf9Z34NPBf
OCR Text	...GS C is s C rss C oss = 0 V, f = 1M H z = C gs + C gd , Cds SH OR TE D = C gd = C d s + C gd 20 I D = -10 A V DS = -44 V V DS = -28 V 16 C , C a p a cita n ce (p f ) 800 C is s C o ss 12 600 8 400 C rs s ...
Description	Power MOSfET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A) Power MOSfET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A) -55V Single P-Channel HEXfET Power MOSfET in a TO-220AB package
File Size	104.35K / 8 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9f5608D0C K9f5608D0C-D K9f5608D0C-H K9f5608D0C-P K9f5608D0C-Y K9f5616U0C-Y K9f5608Q0C K9f5608Q0C-D K9f5608Q0C-H K9f5608U0C K9f5608U0C-D K9f5608U0C-f K9f5608U0C-H K9f5608U0C-P K9f5608U0C-V K9f5608U0C-Y K9f5616D0C K9f5616D0C-D K9f5616D0C-H K9f5616D0C-P K9f5616D0C-Y K9f5616Q0C K9f5616Q0C-D K9f5616Q0C-H K9f5616U0C K9f5616U0C-D K9f5616U0C-H K9f5616U0C-P K9f5616Q0C-HCB0 K9f5616Q0C-DCB0 K9f5616Q0C-DIB0 K9f5616Q0C-HIB0
OCR Text	...Y,P K9f5608U0C-D,H K9f5608U0C-V,f K9f5616U0C-Y,P K9f5616U0C-D,H 2.7 ~ 3.6V X16 X8 2.4 ~ 2.9V X16 Vcc Range 1.70 ~ 1.95V Organization X8 X16 ...fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/D...
Description	32M x 8 Bit / 16M x 16 Bit NAND flash Memory 512Mb/256Mb 1.8V NAND flash Errata 32M x 8 Bit , 16M x 16 Bit NAND flash Memory
File Size	679.73K / 42 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9f5608Q0B-DCB0 K9f5608Q0B-DIB0 K9f5608Q0B-HCB0 K9f5608Q0B-HIB0 K9f5608U0B K9f5608U0B-DCB0 K9f5608U0B-DIB0 K9f5608U0B-fCB0 K9f5608U0B-fIB0 K9f5608U0B-HCB0 K9f5608U0B-HIB0 K9f5608U0B-PCB0 K9f5608U0B-PIB0 K9f5608U0B-VCB0 K9f5608U0B-VIB0 K9f5608U0B-YCB0 K9f5608U0B-YIB0 K9f5616U0B-DCB0 K9f5616U0B-DIB0 K9f5616U0B-HCB0 K9f5616U0B-HIB0 K9f5616U0B-PCB0 K9f5616U0B-PIB0 K9f5616U0B-YCB0 K9f5616U0B-YIB0 K9f5616Q0B-DCB0 K9f5616Q0B-DIB0 K9f5616Q0B-HCB0 K9f5616Q0B-HIB0
OCR Text	...Y,P K9f5608U0B-D,H K9f5608U0B-V,f K9f5616U0B-Y,P K9f5616U0B-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP...fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/D...
Description	32M x 8 Bit / 16M x 16 Bit NAND flash Memory 32M x 8 Bit , 16M x 16 Bit NAND flash Memory
File Size	601.33K / 34 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9f5608Q0C K9f5608Q0C-D K9f5608Q0C-DCB0 K9f5608Q0C-DIB0 K9f5608Q0C-H K9f5608Q0C-HCB0 K9f5608Q0C-HIB0 K9f5608U0C K9f5608U0C-D K9f5608U0C-DCB0 K9f5608U0C-DIB0 K9f5608U0C-f K9f5608U0C-fCB0 K9f5608U0C-fIB0 K9f5608U0C-H K9f5608U0C-HCB0 K9f5608U0C-HIB0 K9f5608U0C-P K9f5608U0C-PCB0 K9f5608U0C-PIB0 K9f5608U0C-V K9f5608U0C-VCB0 K9f5608U0C-VIB0 K9f5608U0C-Y K9f5608U0C-YCB0 K9f5608U0C-YIB0 K9f1208Q0A K9f5616U0C K9f5616U0C-D K9f5616U0C-DCB0 K9f5616U0C-DIB0 K9f5616U0C-H K9f5616U0C-HCB0 K9f5616U0C-HIB0 K9f5616U0C-P K9f5616U0C-PCB0 K9f5616U0C-PIB0 K9f5616U0C-Y K9f5616U0C-YCB0 K9f5616U0C-YIB0 K9f5616Q0C K9f5616Q0C-D K9f5616Q0C-DCB0 K9f5616Q0C-DIB0 K9f5616Q0C-H K9f5616Q0C-HCB0 K9f5616Q0C-HIB0 K9f1208Q0A-XXB0 K9f5608D0C-H K9f5608D0C-D K9f5608D0C-Y K9f5608D0C-P K9f5608U0M
OCR Text	...Y,P K9f5608U0C-D,H K9f5608U0C-V,f K9f5616U0C-Y,P K9f5616U0C-D,H 2.7 ~ 3.6V X16 X8 Vcc Range 1.70 ~ 1.95V Organization X8 X16 TSOP1 TBGA WSOP...fast Write Cycle Time - Program time : 200s(Typ.) - Block Erase Time : 2ms(Typ.) * Command/Address/D...
Description	32M x 8 Bit NAND flash Memory 32M x 8 Bit / 16M x 16 Bit NAND flash Memory 512Mb/256Mb 1.8V NAND flash Errata
File Size	653.97K / 39 Page	View it Online	Download Datasheet

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