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  eoff Datasheet PDF File

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    HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL

FAIRCHILD SEMICONDUCTOR CORP
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP12N60C3D HGT1S12N60C3DS HGTP12N60C3DNL
OCR Text ... td(ON)I tri td(OFF)I tfi EON eoff VEC IEC = 12A - (c)2001 Fairchild Semiconductor Corporation HGTP12N60C3D, HGT1S12N60C3DS Rev. B HGTP12N60C3D, HGT1S12N60C3DS Electrical Specifications PARAMETER Diode Reverse Recovery Ti...
Description 24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-220AB
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 24 A, 600 V, N-CHANNEL IGBT, TO-263AB

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    HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S

Harris, Corp.
HARRIS[Harris Corporation]
Fairchild Semiconductor
Part No. HGTP12N60C3 HGT1S12N60C3 HGT1S12N60C3S
OCR Text ... tD(ON)I tRI tD(OFF)I tFI EON eoff RJC TJ = 150oC, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15V, RG = 25, L = 100H 3. Turn-Off Energy Loss (eoff) is defined as the integral of the instantaneous power loss starting at the trailing edg...
Description 24A, 600V, UFS Series N-Channel IGBTs 4A00V的,的ufs系列N沟道IGBT
24A/ 600V/ UFS Series N-Channel IGBTs

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    HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP15N120C3 HGTG15N120 HGT1S15N12 HGTG15N120C3 HGT1S15N120C3S HGT1S15N120C3
OCR Text ...) td(ON)I trI td(OFF)I t fI EON eoff RJC IC = IC110, VCE = 0.5 BVCES IC = IC110, VCE = 0.5 BVES TJ = 150oC ICE = IC110 VCE(PK) = 0.8 BVCES VGE = 15V RG = 10 L = 1mH Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay T...
Description 35A 1200V UFS Series N-Channel IGBTs
35A/ 1200V/ UFS Series N-Channel IGBTs
35A, 1200V, UFS Series N-Channel IGBTs 35 A, 1200 V, N-CHANNEL IGBT, TO-262AA

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    HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL

Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. HGTP5N120BND HGTG5N120BND HGTP5N120 HGTG5N120BNDNL HGTP5N120BNDNL
OCR Text ... td(ON)I trI td(OFF)I tfI EON eoff IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 960V, VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20) (c)2003 Fairchild Semiconductor Corporation HGTG5N120BND, HGTP5N120BND, Rev. B1 HGTG5N...
Description 3.3V 72-mc CPLD
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes

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    HGTP5N120BN HGT1S5N120BNS FN4599

INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. HGTP5N120BN HGT1S5N120BNS FN4599
OCR Text ...re 18. 5. Turn-Off Energy Loss (eoff) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were t...
Description From old datasheet system
21A, 1200V, NPT Series N-Channel IGBTs(21A, 1200V NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs
XC9536-7VQ44I - NOT RECOMMENDED for NEW DESIGN 21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

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    HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND

INTERSIL[Intersil Corporation]
Fairchild Semiconductor, Corp.
Part No. HGTP5N120CND FN4598 HGT1S5N120CNDS HGTG5N120CND
OCR Text ... td(ON)I trI td(OFF)I tfI EON eoff IGBT and Diode at TJ = 25oC ICE = 5.5A VCE = 0.8 BVCES VGE = 15V RG = 25 L = 5mH Test Circuit (Figure 20) 2 HGTG5N120CND, HGTP5N120CND, HGT1S5N120CNDS Electrical Specifications PARAMETER Curre...
Description From old datasheet system
25A/ 1200V/ NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
25A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode(25A, 1200V,NPT系列N沟道绝缘栅双极型晶体 5 A, 1200 V, N-CHANNEL IGBT, TO-247

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    HGTP5N120CN HGT1S5N120CNS FN4596

INTERSIL[Intersil Corporation]
Part No. HGTP5N120CN HGT1S5N120CNS FN4596
OCR Text ...re 18. 4. Turn-Off Energy Loss (eoff) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were t...
Description From old datasheet system
25A 1200V NPT Series N-Channel IGBT
25A, 1200V, NPT Series N-Channel IGBT
25A/ 1200V/ NPT Series N-Channel IGBT

File Size 79.50K  /  7 Page

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    HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A

INTERSIL[Intersil Corporation]
Part No. HGTP5N120 HGT1S5N120 HGT1S5N120BNDS FN4597 HGTP5N120BND HGTG5N120BND HGT1S5N120BNDS9A
OCR Text ... td(ON)I trI td(OFF)I tfI EON eoff IGBT and Diode at TJ = 25oC, ICE = 5A, VCE = 0.8 BVCES , VGE = 15V, RG = 25, L = 5mH, Test Circuit (Figure 20) 2 HGTG5N120BND, HGTP5N120BND, HGT1S5N120BNDS Electrical Specifications PARAMETER ...
Description From old datasheet system
21A 1200V NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21A, 1200V, NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes(21A, 1200V,NPT系列N沟道绝缘栅双极型晶体
21A/ 1200V/ NPT Series N-Channel IGBTs with Anti-Parallel Hyperfast Diodes
21 A, 1200 V, N-CHANNEL IGBT, TO-263AB

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    Infineon Technologies
Part No. K25T120
OCR Text ... A A/s td(on) tr td(off) tf Eon eoff Ets T j =2 5 C , V C C = 60 0 V, I C = 2 5 A V G E = 0/ 15 V , R G = 22 , 2) L =1 8 0n H, 2) C = 3 9p F Energy losses include "tail" and diode reverse recovery. 50 30 560 70 2.0 2.2 4.2 mJ ns Symbol Co...
Description Search --To IKW25T120

File Size 923.28K  /  16 Page

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    Renesas Electronics Corporation
Part No. RJH60A81RDPD-A0-15
OCR Text ... = 15 v i c = 5 a, tc = 150 c eoff eon v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c 10 1 0.1 0.01 eoff eon 1 100 10 1000 100 10 0 1000 v cc = 300 v, v ge = 15 v rg = 5 , tc = 150 c t d(off) t d(on) t f t r 50 25 150 75 125 100 ...
Description 600V - 5A - IGBT

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