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Kersemi Electronic Co., Ltd.
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| Part No. |
FQPF3N60
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| OCR Text |
...00% avalanche tested improved dv/dt capability absolute maximum ratings t c = 25c unless otherwise noted thermal characteristics ...l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol param... |
| Description |
600V N-Channel MOSFET
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| File Size |
728.67K /
7 Page |
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it Online |
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International Rectifier, Corp.
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| Part No. |
IRF1310NSTRR
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| OCR Text |
...titive avalanche energy ? 16 mj dv/dt peak diode recovery dv/dt ?? 5.0 v/ns t j operating junction and -55 to + 175 t stg storage temperat...l electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. unit... |
| Description |
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 42A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 100V的五（巴西）直| 42A条（丁）|63AB
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| File Size |
183.98K /
10 Page |
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it Online |
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NXP Semiconductors N.V.
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| Part No. |
BTA312B-800E
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| OCR Text |
...d immunity to false turn-on by dv/dt ? high commutation capability with sensitive gate ? high voltage capability ? planar passivated for v...l latching current v d =12v; i g = 0.1 a; t2+ g+; t j =25c; see figure 8 --25ma v d =12v; i g = 0.... |
| Description |
3Q Hi-Com Triac BTA312B-800E<SOT404 (D2PAK)|<<http://www.nxp.com/packages/SOT404.html<1<,;
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| File Size |
122.57K /
14 Page |
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it Online |
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Rootech
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| Part No. |
BTA12
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| OCR Text |
... gt ii max. 15 30 60 80 ma dv/dt (2) v d = 67 %vdrm gate open tj = 125c min. 20 40 500 1000 v/s (dv/dt)c = 0.1 v/s tj = 125c ...l = 30 w all max. 1.3 v v gd v d = vdrm r l = 3.3 kw tj = 125c all min. 0.2 v i h (2)... |
| Description |
TRIAC
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| File Size |
190.61K /
5 Page |
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it Online |
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