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  diode.0a Datasheet PDF File

For diode.0a Found Datasheets File :: 12891    Search Time::1.812ms    
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    FDFS2P753AZ08

Fairchild Semiconductor
Part No. FDFS2P753AZ08
OCR Text Diode April 2008 FDFS2P753AZ Integrated P-Channel PowerTrench MOSFET and Schottky Diode -30V, -3A, 115m Features Max rDS(on) = 115m at VGS = -10V, ID = -3.0A Max rDS(on) = 180m at VGS = -4.5V, ID = -1.5A VF < 0.45V @ 2A VF < 0.28V...
Description Integrated P-Channel PowerTrench? MOSFET and Schottky Diode -30V, -3A, 115mΩ
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode -30V, -3A, 115mヘ

File Size 265.24K  /  7 Page

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    FDFMA2P85708 FDFMA2P857

Fairchild Semiconductor
Part No. FDFMA2P85708 FDFMA2P857
OCR Text Diode March 2008 FDFMA2P857 Integrated P-Channel PowerTrench(R) MOSFET and Schottky Diode -20V, -3.0A, 120m Features MOSFET: Max rDS(on) = 120m at VGS = -4.5V, ID = -3.0A Max rDS(on) = 160m at VGS = -2.5V, ID = -2.5A Max rDS(on)...
Description -20V Integrated P-Channel PowerTrenchMOSFET and Schottky Diode
Integrated P-Channel PowerTrench㈢ MOSFET and Schottky Diode .20V, .3.0A, 120mヘ
Integrated P-Channel PowerTrench庐 MOSFET and Schottky Diode .20V, .3.0A, 120m惟
Integrated P-Channel PowerTrench? MOSFET and Schottky Diode .20V, .3.0A, 120mΩ

File Size 536.17K  /  8 Page

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    JRC
Part No. NJM2670
OCR Text ...000ma - 1.3 1.6 v upper diode forward v fu2 io=1300ma - 1.6 1.9 v v fl1 io=1000ma - 1.3 1.6 v lower diode forw...0a 0.2 0.4 0.6 0.8 1 1.2 outa1 outa2 outb1 outb2 vsat(d) [v] temperature [degc] njm2670 vsat(d) vs...
Description Stepper Motor / DIP22-D2 / EMP24-E3

File Size 379.84K  /  9 Page

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    Infineon Technologies
Part No. P30N60T
OCR Text ...nergy losses include "tail" and diode reverse recovery. 2) ns Switching Characteristic, Inductive Load, at Tj=175 C Parameter IGBT Cha...0A 100H z Ic 1A DC 1ms 10ms Ic 1kH z 10kH z 100kH z 0.1A 1V 10V 100V 1000V ...
Description Search --To IGP30N60T

File Size 416.24K  /  12 Page

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    FQH8N100C

Fairchild Semiconductor
Part No. FQH8N100C
OCR Text ...epetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25C) - Derate above 25C Operating and Storage Temperature Range...0A VDS = 50 V, ID = 4.0 A VDS = 25 V, VGS = 0 V, f = 1.0 MHz (Note 4) Min 1000 -----3.0 ------ ...
Description N-Channel QFETMOSFET 1000V, 8.0A, 1.45
1000V N-Channel MOSFET

File Size 900.47K  /  8 Page

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    DIM200PLM33-F00011

Dynex Semiconductor
Part No. DIM200PLM33-F00011
OCR Text ... = 150 c 2.6 k w i 2 t diode i 2 t value C igbt arm v r = 0, t p = 10ms, t j = 125oc 20 ka 2 s diode i 2 t value ...0a 2. 8 v v ge = 15v, i c = 20 0a, t j = 125 c 3. 6 v i f diode forward...
Description IGBT Chopper Module

File Size 309.86K  /  8 Page

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