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  centigrade Datasheet PDF File

For centigrade Found Datasheets File :: 798    Search Time::3ms    
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    IXGK120N60B10 IXGX120N60B

IXYS Corporation
Part No. IXGK120N60B10 IXGX120N60B
OCR Text ...0 125 150 TJ - Degrees centigrade Fig. 5. Colle ctor-to-Em itter Voltage vs. Gate-to-Em itte r voltage 3.6 3.4 3.2 TJ = 25C 180 160 140 Fig. 6. Input Adm ittance 2.8 2.6 2.4 2.2 2 1.8 1.6 6 7 8 9 100A 50A I C - Am p...
Description HiPerFAST IGBTs

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    IXFR44N50P

IXYS Corporation
Part No. IXFR44N50P
OCR Text ... V DS - Volts T J - Degrees centigrade Fig. 5. R DS(on) Normalized to ID = 22A Value v s. Drain Current 3.2 3.0 2.8 V GS = 10V TJ = 125C 27 24 50 45 40 21 Fig. 6. Maximum Drain Current vs. Tem perature Case Temperature Fi...
Description PolarHV HiPerFET Power MOSFET ISOPLUS247

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    IXGK60N60B2D1 IXGX60N60B2D1

IXYS Corporation
Part No. IXGK60N60B2D1 IXGX60N60B2D1
OCR Text ...25C 250 200 300 TJ - Degrees centigrade Fig. 6. Input Adm ittance VC E - Volts 2.8 2.5 2.2 1.9 I C - Amperes I C = 100A 50A 25A 150 100 50 TJ = 125C -40C TJ = 25C 1.6 1.3 5 6 7 8 9 10 11 12 13 14 15 16 17 0 4 5 6 7 8 9 ...
Description HiPerFAST IGBT with Diode

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    IXGK120N60A3 IXGX120N60A3

IXYS Corporation
Part No. IXGK120N60A3 IXGX120N60A3
OCR Text ... VCE - Volts TJ - Degrees centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 3.0 2.8 2.6 2.4 TJ = 25C 200 180 160 I = 200A 100A 50A 140 Fig. 6. Input Admittance VCE - Volts 2.2 2.0 1.8 1.6 1.4 1.2...
Description GenX3 A3-Class IGBTS

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    IXGK120N120A3 IXGX120N120A3

IXYS Corporation
Part No. IXGK120N120A3 IXGX120N120A3
OCR Text ... VCE - Volts TJ - Degrees centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 5.0 4.5 TJ = 25C 200 180 160 140 Fig. 6. Input Admittance IC - Amperes VCE - Volts 4.0 3.5 3.0 2.5 2.0 1.5 1...
Description GenX3 A3-Class IGBTs

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    HB7121BELECTRONICS

NXP Semiconductors N.V.
Hynix Semiconductor
Part No. HB7121BELECTRONICS
OCR Text ... Line Buffer TBD@15MHz 0~40 centigrade 0.5um 3metal CMOS This document is a general product description and is subject to change without notice. Hyundai Electronics does not assume any responsibility for use of circuits described. NO...
Description CMOS IMAGE SENSOR With 8-bit ADC CMOS图像传感器的8位ADC

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    IXTQ160N10T IXTH160N10T

IXYS Corporation
Part No. IXTQ160N10T IXTH160N10T
OCR Text ... 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 160a i d = 80a fig. 5. r ds(on) normalized to i d = 80a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 0 50 100 150...
Description Preliminary Technical Information TrenchMVTM Power MOSFET
160 A, 100 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

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    IXGT60N60C3D1 IXGH60N60C3D1

IXYS Corporation
Part No. IXGT60N60C3D1 IXGH60N60C3D1
OCR Text ... VCE - Volts TJ - Degrees centigrade Fig. 5. Collector-to-Emitter Voltage vs. Gate-to-Emitter Voltage 6.0 5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 6 7 8 9 10 11 12 13 14 15 C Fig. 6. Input Admittance 160 140 120 TJ = 25C IC - Am...
Description GenX3 600V IGBTs with Diode

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    IXFC96N15P

IXYS Corporation
Part No. IXFC96N15P
OCR Text ...zed to 3.8 3.4 TJ - Degrees centigrade Fig. 6. Drain Current vs. Case Fig. Tem perature 8045 7040 TJ = 175C D Amperes IID -- Amperes 0.5 D25 ID = 48IA Value vs. ID R D S ( o n ) - Normalized 3 2.6 2.2 1.8 1.4 1 0.6 0 50 100 1...
Description PolarHT HiPerFET Power MOSFET ISOPLUS220

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    IXGT40N60B2 IXGH40N60B2

IXYS Corporation
Part No. IXGT40N60B2 IXGH40N60B2
OCR Text ...5 16 17 3 4 180 TJ - Degrees centigrade Fig. 6. Input Adm ittance 2.5 2 1.5 1 I C - Amperes VC E - Volts TJ = 125C 25C -40C 5 6 7 8 9 10 V G E - Volts (c) 2003 IXYS All rights reserved V G E - Volts ...
Description IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
75 A, 600 V, N-CHANNEL IGBT, TO-268AA
HiPerFAST IGBT

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