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avalanche Datasheet PDF File

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					Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	...ain diode reverse drain current avalanche current avalanche energy Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID I D(pulse)* I DR I AP * 3 3 2 1 Ratings -60 20 -50 -200 -50 -50 214 75 150 -55 to +150 ...
Description	Silicon P Channel MOS FET High Speed Power Switching Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	2SJ518
OCR Text	...ain Current I DR (A) Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 0.5 I AP = -2 A V DD = -25 V duty < 0.1 % Rg > 50 -5 -4 0.4 -3 -10 V -5 V V GS = 0, 5 V 0.3 -2 0...
Description	Silicon P-Channel MOS FET Silicon P Channel MOS FET High Speed Power Switching
File Size	46.74K / 9 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	2SJ526
OCR Text	...ce to Drain Voltage Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating 20 I AP = -12 A V DD = -25 V duty < 0.1 % Rg > 50 -10 Reverse Drain Current I DR (A) -8 16 -6 -10 V -4 V GS...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	50.48K / 9 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	2SJ527 2SJ527L 2SJ527S
OCR Text	...rce to Drain Voltage -5 Maximum avalanche Energy vs. Channel Temperature Derating Repetitive avalanche Energy EAR (mJ) 2.5 I AP = -5 A V DD = -25 V duty < 0.1 % Rg > 50 Reverse Drain Current I DR (A) -4 -10 V 2.0 -3 ...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	53.03K / 9 Page	View it Online	Download Datasheet

					HITACHI[Hitachi Semiconductor]
Part No.	2SJ528 2SJ528L 2SJ528S
OCR Text	... Current I DR (A) -8 Repetitive avalanche Energy EAR (mJ) Maximum avalanche Energy vs. Channel Temperature Derating I AP = -7 A V DD = -25 V duty < 0.1 % Rg 50 -10 10 8 -6 -10 V -4 -5 V V GS = 0, 5 V 6 4 -2 2 0 25 ...
Description	Power switching MOSFET Silicon P Channel MOS FET High Speed Power Switching
File Size	52.33K / 9 Page	View it Online	Download Datasheet