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IRF[International Rectifier]
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| Part No. |
IRPT2059A
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| OCR Text |
...ower 150% overload for 1 minute 8a rms nominal full load power 12A rms 150% overload for 1 minute 425V maximum 14.4A 50kOhms 5% 3.1kOhms 10%...800v rectifiers, 600V short-circuit rated, ultra-fast IGBT inverter with ultra-fast freewheeling dio... |
| Description |
Power Module for 2 hp Motor Drives
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| File Size |
307.82K /
12 Page |
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IRF[International Rectifier]
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| Part No. |
IRGPH40MD2
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| OCR Text |
...V, T J = 150C -- 2.6 3.3 V IC = 8a -- 2.3 3.0 IC = 8a, T J = 150C -- -- 100 nA VGE = 20V
VGE(th) VGE(th)/TJ gfe ICES VFM IGES
Gate Thr...800v -- 340 930 VGE = 15V, R G = 10 -- 510 930 Energy losses include "tail" and -- 2.1 -- diode reve... |
| Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18a)
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| File Size |
69.40K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FQI5N80 FQB5N80 FQI5N80TU
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| OCR Text |
...
TM
Features
* * * * * * 4.8a, 800v, RDS(on) = 2.6 @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability
D
D
!
"
G
S
G!
3
" "
5
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| Description |
800v N-Channel QFET
800v N-Channel MOSFET
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| File Size |
669.43K /
9 Page |
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it Online |
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意法半导
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| Part No. |
TN8
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| OCR Text |
8a SCRs
SENSITIVE & STANDARD
MAIN FEATURES:
Symbol IT(RMS) VDRM/VRRM IGT Value 8 600 to 1000 0.2 to 15 Unit
G
A
A
K
V mA
...800v
TS
SENSITIVE SCR SERIES CURRENT: 8a
8 20 -
600 B (-TR)
PACKAGE: B: DPAK H: IPAK T: T... |
| Description |
8a SCRs
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| File Size |
116.94K /
9 Page |
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SavantIC
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| Part No. |
C3461
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| OCR Text |
...ng area) applications 800v/8a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo ... |
| Description |
2SC3461
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| File Size |
257.87K /
4 Page |
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it Online |
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INCHANGE Semiconductor
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| Part No. |
BUX33
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| OCR Text |
...itter saturation voltage i c = 8a; i b = 2a 1.0 v v ce( sat )-2 collector-emitter saturation voltage i c = 12a; i b = 3a 4.0...800v;v be = -1.5v v ce =800v;v be = -1.5v;t c = 100 0.1 1.0 ma i ebo emitter cutoff cur... |
| Description |
Silicon NPN Power Transistor
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| File Size |
207.73K /
2 Page |
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it Online |
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Alpha & Omega Semiconductors
Alpha & Omega Semicondu...
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| Part No. |
AOT8N80 AOTF8N80
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| OCR Text |
...ime v gs =10v, v ds =400v, i d =8a, r g =25 w gate resistance v gs =0v, v ds =0v, f=1mhz turn-on rise time reverse transfer capacitance i d =250 a, v gs =0v, t j =25c i d =250 a, v gs =0v, t j =150c gate drain charge total gate charge v g... |
| Description |
800v, 7.4A N-Channel MOSFET
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| File Size |
346.36K /
6 Page |
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SANYO
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| Part No. |
2SC3992
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| OCR Text |
... IE=0 VEB=5V, IC=0 VCE=5V, IC=0.8a VCE=5V, IC=4A VCE=10V, IC=0.8a VCB=10V, f=1MHz 10* 8 15 215 MHz pF Conditions Ratings min typ max 10 10 40* Unit A A
* : The 2SC3992 is classified by 0.8a hFE as follows :
10
K
20
15
L
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| Description |
NPN Triple Diffused Planar Silicon Transistor 800v/12A Switching Regulator Applications
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| File Size |
108.31K /
5 Page |
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it Online |
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