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8-bit 524288 Datasheet PDF File

For 8-bit 524288 Found Datasheets File :: 1561 Search Time::1.797ms
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				BSI[Brilliance Semiconductor] BRILLIANCE SEMICONDUCTOR, INC. Diotec Semiconductor AG
Part No.	BS62LV4005TI BS62LV4005STC BS62LV4005STI BS62LV4005 BS62LV4005EC BS62LV4005EI BS62LV4005PC BS62LV4005PI BS62LV4005SC BS62LV4005SI BS62LV4005TC
OCR Text	8 bit GENERAL DESCRIPTION BS62LV4005 * Vcc operation voltage : 4.5V ~ 5.5V * Low power consumption Vcc = 5.0V C-grade: 45mA (Max.) operating current I -grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current * High spe...
Description	Low Power/Voltage CMOS SRAM 512K X 8 bit 低功电压CMOS SRAM的为512k × 8
File Size	326.09K / 11 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808Q0B K9F2808Q0B-D K9F2808Q0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-D K9F2808U0B-DCB0 K9F2808U0B-DIB0 K9F2808U0B-V K9F2808U0B-VCB0 K9F2808U0B-VIB0 K9F2808U0B-Y K9F2808U0B-YCB0 K9F2808U0B-YIB0 K9F2808Q0C K9F2808Q0C-DCB0
OCR Text	8 Bit NAND Flash Memory Revision History Revision No. History 0.0 0.1 0.2 Initial issue. K9F2808U0B(3.3V device)'s qualification is finished K9F2808Q0B (1.8V device) - Changed typical read operation current (Icc1) from 8mA to 5mA - Cha...
Description	16M x 8 Bit / 8M x 16 Bit NAND Flash Memory 16M x 8 Bit NAND Flash Memory
File Size	302.44K / 29 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0M- K9F2808U0M-YCB0 K9F2808U0M-YIB0
OCR Text	8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 1.0 Initial issue. 1. Changed tPROG Parameter : 1ms(Max.) 500s(Max.) 2. Changed tBERS Parameter : 4ms(Max.) 3ms(Max.) 3. Changed Input and Output Timin...
Description	16M x 8 Bit NAND Flash Memory
File Size	344.24K / 26 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0 K9F2808U0A K9F2808U0A- K9F2808U0A-YCB0 K9F2808U0A-YIB0
OCR Text	8 Bit NAND Flash Memory FLASH MEMORY Revision History Revision No. History 0.0 0.1 0.2 Initial issue. 1. Revised real-time map-out algorithm(refer to technical notes) 1. Changed device name - KM29U128AT -> K9F2808U0A-YCB0 - KM29U128...
Description	16M x 8 Bit NAND Flash Memory
File Size	351.20K / 26 Page	View it Online	Download Datasheet

				Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
Part No.	TC55V040AFT-55 TC55V040AFT-70
OCR Text	8-bit FULL CMOS STATIC RAM DESCRIPTION The TC55V040AFT is a 4,194,304-bit static random access memory (SRAM) organized as 524,288 words by 8 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a...
Description	524,288-WORD BY 8-bit FULL CMOS STATIC RAM
File Size	103.51K / 11 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor]
Part No.	K6R4008V1D
OCR Text	...,T,U,E)C(I,L,P) 08/10 3.3 5 3.3 8/10 10 8/10 3.3 5 8/10 10 Part Number K6R4004C1D-J(K)C(I) 10 VDD(V) 5 Speed ( ns ) 10 PKG J : 32-SOJ K : 32...Bit High-Speed CMOS Static RAM FEATURES * Fast Access Time 8,10ns(Max.) * Low Power Dissipation St...
Description	512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
File Size	237.20K / 10 Page	View it Online	Download Datasheet

				ATMEL Corporation
Part No.	AT29BV040A AT29BV040A-25 AT29BV040A-25TC AT29BV040A-25TI AT29BV040A-35 AT29BV040A-35TC AT29BV040A-35TI
OCR Text	...s organized as 524,288 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access time...BIT: I n a d d i t i o n t o DATA p o l l i n g t h e AT29BV040A provides another method for determi...
Description	4 Megabit 512K x 8 Single 2.7-volt Battery-Voltage CMOS Flash Memory
File Size	129.45K / 10 Page	View it Online	Download Datasheet

				MAXIM - Dallas Semiconductor DALLAS[Dallas Semiconducotr] DALLAS[Dallas Semiconductor] Maxim Integrated Products, Inc.
Part No.	DS1250Y-100 DS1250Y-70 DS1250ABP- DS1250YP-70-IND DS1250AB DS1250AB-100 DS1250AB-70 DS1250ABP-100-IND DS1250ABP-70-IND DS1250Y DS1250YP-100-IND DS1250YP-70
OCR Text	...ring power loss Replaces 512k x 8 volatile static RAM, EEPROM or Flash memory Unlimited write cycles Low-power CMOS Read and write access ti...bit, fully static, nonvolatile SRAMs organized as 524,288 words by 8 bits. Each complete NV SRAM has...
Description	512K X 8 NON-VOLATILE SRAM MODULE, 100 ns, DIP32 GT 6C 2#8 4#16 PIN PLUG 4096k Nonvolatile SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 4096k Nonvolatile SRAM 4096k非易失SRAM 512K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA34 POWERCAP MODULE-34
File Size	216.20K / 11 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY29LV800 HY29LV800B-55 HY29LV800B-55I HY29LV800B-70 HY29LV800B-70I HY29LV800B-90 HY29LV800B-90I HY29LV800T-55 HY29LV800T-55I HY29LV800T-70 HY29LV800T-70I HY29LV800T-90 HY29LV800T-90I HY29LV800B
OCR Text	8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory KEY FEATURES n Single Power Supply Operation - Read, program and erase operations fr...bit data path for read Inputs/Outputs and write operations. In Byte mode, DQ[15]/A[-1] is used as th...
Description	8 Mbit (1M x 8/512K x 16) Low Voltage Flash Memory
File Size	488.15K / 40 Page	View it Online	Download Datasheet

				SANYO[Sanyo Semicon Device]
Part No.	LC374100SM LC374100ST
OCR Text	8 bits) Mask ROM Internal Clocked Silicon Gate Preliminary Overview The LC374100SM and LC374100ST are 524,288-word x 8-bit organization (4,194,304-bit) mask programmable read only memories. They feature a wide operating voltage range (2.6...
Description	4 MEG (524288 words x 8 bits) Mask ROM Internal Clocked Silicon Gate
File Size	63.19K / 4 Page	View it Online	Download Datasheet

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