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  6.26a Datasheet PDF File

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    IRFB42N20D

International Rectifier
Part No. IRFB42N20D
OCR Text ...from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings l high...26a q g total gate charge CCC 91 140 i d = 26a q gs gate-to-source charge CCC 2...
Description 200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)

File Size 214.00K  /  8 Page

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    Sharp Corporation
Sharp, Corp.
Part No. LH543601M-20 LH543601M-25 LH543601M-30 LH543601P-25 LH543601P-20 LH543601M-35 LH543601P-30 LH543601P-35
OCR Text ...o 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 pin 1 pin 132 131 130 129 128 127 126 125 124 123 122 121 120 119 118 117 d 12a d 13a d 14a v sso ...26a v sso d 29a v cco d 32a v sso d 34a d 35a v sso d 32b v cco d 29b v sso d 26b d 25b d 21b d 19b ...
Description 256 x 36 x 2 Bidirectional FIFO 256 × 36 × 2双向先进先出

File Size 366.72K  /  43 Page

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    CEP62A3 CEB62A3

CET[Chino-Excel Technology]
Part No. CEP62A3 CEB62A3
OCR Text ....0MHZ 600 180 19 36 97 68 35 6 11 48 72 175 135 42 SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Ti...26A Min Typ Max Unit 1.3 V 4 DRAIN-SOURCE DIODE CHARACTERISTICS a Notes a.Pulse Test:Puls...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 49.72K  /  5 Page

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    ADVANCED POWER ELECTRONICS CORP
Part No. AP4435GH AP4435GJ
OCR Text ...ating rohs-compliant product 44.6 -55 to 150 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v -30 + ...26a - - 20 m ? v gs =-4.5v, i d =-16a - - 36 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-...
Description 40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252
40 A, 30 V, 0.02 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251

File Size 212.62K  /  6 Page

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    FUJI[Fuji Electric]
Part No. 2SK3680-01
OCR Text ...0 0 4 8 12 VDS [V] 16 20 24 VGS=6.0V 6.5V Typical Transfer Characteristic ID=f(VGS):80 s pulse test,VDS=25V,Tch=25 C 100 100 Typical ...26A,VGS=10V 0.3 7.5V 0.2 0.2 RDS(on) [ ] 20V RDS(on) [ ] 8V 10V max. typ. ...
Description N-CHANNEL SILICON POWER MOSFET

File Size 109.36K  /  4 Page

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    FDB6030L FDP6030L FDB6030

Fairchild Semiconductor Corporation
Part No. FDB6030L FDP6030L FDB6030
OCR Text ...s = v gs , i d = 250 a 1 1.6 3 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -4 ...26a d 1 2 3 4 5 0 10 20 30 40 50 60 v , gate to source voltage (v) i , drain current (a) v ...
Description    N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 473.96K  /  4 Page

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    FDB6035L

Fairchild Semiconductor
Part No. FDB6035L
OCR Text ...s = v gs , i d = 250 a 1 1.6 3 v d v gs(th) / d t j gate threshold voltage temp.coefficient i d = 250 a , referenced to 25 o c -4 ...26a d 1 2 3 4 5 0 10 20 30 40 50 60 v , gate to source voltage (v) i , drain current (a) v ...
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor

File Size 412.87K  /  4 Page

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    IRF[International Rectifier]
Part No. IRFB42N20D
OCR Text ... for 10 seconds Mounting torqe, 6-32 or M3 screw TO-220AB Max. 44 31 180 2.4 330 2.2 30 2.5 -55 to + 175 300 (1.6mm from case ) 10 l...26A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VG...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.055ohm, Id=44A)
Power MOSFET(Vdss=200V Rds(on)max=0.055ohm Id=44A)

File Size 154.64K  /  8 Page

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