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  5v 3.2a Datasheet PDF File

For 5v 3.2a Found Datasheets File :: 22653    Search Time::2ms    
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    2SD2137A 2SB1417 2SB1417A 2SD2137

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137A 2SB1417 2SB1417A 2SD2137
OCR Text ... IC = -3A, IB = - 0.375A VCE = -5v, IC = - 0.2A, f = 10MHz IC = -1A, IB1 = - 0.1A, IB2 = 0.1A, VCC = -50V 30 0.3 1.0 0.2 -60 -80 70 10 -1.8 -1.2 V V MHz s s s 250 min typ max -100 -100 -100 -100 -100 Unit A A A V Forward current transfer...
Description Silicon PNP epitaxial planar type(For power amplification) 3 A, 80 V, PNP, Si, POWER TRANSISTOR

File Size 53.34K  /  3 Page

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    2SD2137 2SD2137A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2137 2SD2137A
OCR Text ...= 3A IC = 3A, IB = 0.375A VCE = 5v, IC = 0.2A, f = 10MHz IC = 1A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.3 2.5 0.2 60 80 70 10 1.8 1.2 V V MHz s s s 250 min typ max 100 100 100 100 100 Unit A A A V Forward current transfer ratio Base t...
Description Silicon NPN triple diffusion planar type(For power amplification)

File Size 52.93K  /  3 Page

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    2SD2138A 2SB1418 2SB1418A 2SD2138

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138A 2SB1418 2SB1418A 2SD2138
OCR Text ...B = 0 VCE = -40V, IB = 0 VEB = -5v, IC = 0 IC = -30mA, IB = 0 VCE = -4V, IC = -1A VCE = -4V, IC = -2A VCE = -4V, IC = -2A IC = -2A, IB = -8m...3 -1 25C -25C VCE(sat) -- IC Collector power dissipation PC (W) Collector current IC (A) ...
Description Silicon PNP epitaxial planar type Darlington(For power amplification)

File Size 59.81K  /  2 Page

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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ... IB = 0 VCE = 40V, IB = 0 VEB = 5v, IC = 0 IC = 30mA, IB = 0 VCE = 4V, IC = 1A VCE = 4V, IC = 2A VCE = 4V, IC = 2A IC = 2A, IB = 8mA VCE = 1...3 1 25C 100C 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C VCE(sat) -- IC Collector power dissipation PC...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SJ459

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ459
OCR Text ...-5.0V 75C --3 --3 --4.5v --2 --2 --4.0V --1 0 0 --5 --10 --15 --20 IT03686 --1 VGS= --3.5v 0 0 --2.5 --5.0 --7.5 --10.0 --12.5 --15.0 IT03687 Drain-to-Source Voltage, VDS -- V 3.5 Gate-to-Source Voltage, VGS ...
Description    Ultrahigh-Speed Switching Applications
Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 32.07K  /  4 Page

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    2SJ499

SANYO[Sanyo Semicon Device]
Part No. 2SJ499
OCR Text ...A 0V --8 --10 . --3.5v Drain Current, ID -- A --14 --12 --10 --8 --6 --6 --4 --3.0V 0 --0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --2 --3.0 VGS...
Description Load Switching Applications

File Size 31.35K  /  4 Page

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    2SJ502

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. 2SJ502
OCR Text ... -0.3 -0.2 -0.1 VGS=-2.5v -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 0 0 0 75 -4.0 -4.5 -1.4 Drain-to-Source Voltage, VDS - V 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 2 3 5 7 -0.1 2 3 5 7 -1.0 2 3 Gate-to-So...
Description Ultrahigh-Speed Switching Applications 超高速开关应
P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 169.75K  /  4 Page

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    2SJ503 2SJ503TP-FA

Sanyo Electric Co., Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SJ503 2SJ503TP-FA
OCR Text ... -10 .0 -4 -3 -3. 5v Drain Current, ID - A .0 V V -6 -5 -4 -3 -2 -1 -2 VGS=-3.0V -1 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 0 0 -0.5 -1.0 -1.5 ...
Description TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4A I(D) | TO-251VAR 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|51VAR
Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated &#181;P Reset 晶体管| MOSFET的| P通道| 30V的五(巴西)直| 4A条(丁)|52VAR
P-Channel Silicon MOSFET DC/DC Converter Applications

File Size 86.59K  /  4 Page

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    2SJ517

HITACHI[Hitachi Semiconductor]
Part No. 2SJ517
OCR Text ...rent * High speed switching * 2.5v gate drive devices. Outline UPAK 3 D 2 1 4 G S 1. Gate 2. Drain 3. Source 4. Drain 2SJ517 Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltag...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.79K  /  8 Page

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    2SJ562

SANYO[Sanyo Semicon Device]
Part No. 2SJ562
OCR Text ... Ultrahigh-speed switching. * 2.5v drive. Package Dimensions unit:mm 2062A [2SJ562] 4.5 1.6 1.5 0.5 3 1.5 2 3.0 0.75 1 1.0 0.4 2.5 4.25max 0.4 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Drain-to-...
Description P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications

File Size 146.08K  /  4 Page

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For 5v 3.2a Found Datasheets File :: 22653    Search Time::2ms    
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