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  4 banks x 1m x 16bit synchrono Datasheet PDF File

For 4 banks x 1m x 16bit synchrono Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

    A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316AV-7

AMIC Technology
Part No. A43L8316AV-5 A43L8316AV-5.5 A43L8316AV-6 A43L8316AV-7
Description Cycle time:5ns; 200MHz CL=3 access time:4.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:5.5ns; 183MHz CL=3 access time:5.0ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:6ns; 166MHz CL=3 access time:5.5ns 128K x 16bit x 2banks synchronous DRAM
Cycle time:7ns; 143MHz CL=3 access time:6.0ns 128K x 16bit x 2banks synchronous DRAM

File Size 1,429.16K  /  46 Page

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    Winbond Electronics Corp
http://
Winbond Electronics, Corp.
Part No. W9864G6GH-5 W9864G6GH-7S W9864G6GH-6 W9864G6GH-6I
Description 1m × 4 banks × 16 BITS SDRAM
1m 4 banks 16 BITS SDRAM 4M x 16 synchronoUS DRAM, 5.5 ns, PDSO54

File Size 1,182.51K  /  43 Page

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    K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4R441869B-NMCK7 K4R441869B-NMCK8 K4R271669B-NMCG6 K4R271669B-NMCK7 K4R271669B-NBMCCK8 K4R271669B-NCG6 K4R271669B-NCK7 K4R271669B-NCK8 K4R441869B-NCK8 K4R271669B K4R271669B-MCG6 K4R271669B-MCK7 K4R271669B-MCK8 K4R441869B-MCG6 K4R441869B-MCK7 K4R441869B-MCK8 K4R441869B-NCG6 K4R441869B-NCK7 K4R441869B-NMCG6 K4R271869B-MCK8 K4R271869B-NCG6
Description 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz.
K4R271669B:Direct RDRAMData Sheet
256K x 16/18 bit x 32s banks Direct RDRAMTM
256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz.
256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz.

File Size 304.91K  /  20 Page

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    W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6

Winbond Electronics Corp
WINBOND[Winbond]
Part No. W981216BH W981216 W981216BH-75 W981216BH-75I W981216BH-75L W981216BH-6
Description 2M x 4 banks x 16 Bit SDRAM
Low Power SDRAM
Industrial SDRAM
2M x 4 banks x 16 BIT SDRAM
DRAM - Datasheet Reference

File Size 1,313.72K  /  41 Page

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    K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E

SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4S640832E-TC1H K4S640832E-TC1L K4S640832E-TC75 K4S640832E-TL1H K4S640832E-TL1L K4S640832E-TL75 K4S640832E
Description 64Mbit SDRAM 2M x 8Bit x 4 banks synchronous DRAM LVTTL
2M x 8Bit x 4 banks synchronous DRAM Data Sheet

File Size 125.55K  /  10 Page

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    KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM48S8030D KM48S8030DT-GFA KM48S8030DT-GFL KM48S8030DT-GF8
Description 2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 125MHz
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 133MHz
64Mbit SDRAM 2M x 8Bit x 4 banks synchronous DRAM LVTTL 64Mbit SDRAM00万8位4银行同步DRAM LVTTL
2M x 8bit x 4 banks synchronous DRAM, 3.3V power supply, LVTTL, 100MHz

File Size 116.15K  /  11 Page

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    HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5

Hynix Semiconductor
Part No. HY51VS65163HG HY51VS65163HGJ-45 HY51VS65163HGJ-5 HY51VS65163HGJ-6 HY51VS65163HGLJ-45 HY51VS65163HGLJ-6 HY51VS65163HGLJ-5 HY51VS65163HGLT-45 HY51VS65163HGLT-5 HY51VS65163HGT-45 HY51VS65163HGLT-6 HY51VS65163HGT-5 HY51VS65163HGT-6
Description 4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 50ns, low power
4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 60ns, low power
4M x 16bit EDO DRAM, 3.3V, LVTTL-interface, 45ns, low power

File Size 97.47K  /  11 Page

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    A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L

AMIC Technology
Part No. A42L0616S-45L A42L0616S-50L A42L0616S-60 A42L0616S-60L A42L0616V-45L A42L0616V-50L A42L0616V-60 A42L0616V-60L
Description 45ns 1m x 16bit CMOS dynamic ram with EDO page mode
50ns 1m x 16bit CMOS dynamic ram with EDO page mode
60ns 1m x 16bit CMOS dynamic ram with EDO page mode

File Size 227.88K  /  25 Page

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    K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K

Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. K4S280832C K4S280832C-TC_L75 K4S280832C-TC_L1H K4S280832C-TC_L1L K4S280832C-TC/L1H K4S280832C-TC/L1L K4S280832C-TC/L75 K4S280832C-TL750
Description 16M x 8 synchronoUS DRAM, 5.4 ns, PDSO54
4MB x 8Bit x 4 banks synchronous DRAM Data Sheet
128Mbit SDRAM 4M x 8Bit x 4 banks synchronous DRAM LVTTL

File Size 111.80K  /  11 Page

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    http://
Maxwell Technologies, Inc
Part No. 72SD3232RPFE 72SD3232RPFI 72SD3232RPFK 72SD3232RPFH 72SD3232
Description 1 Gbit SDRAM 32-Meg x 32-Bit x 4-banks 32M x 32 synchronoUS DRAM, 6 ns, DFP72
1 Gbit SDRAM 32-Meg x 32-Bit x 4-banks 1千兆位SDRAM2梅格× 32位4,银

File Size 597.29K  /  40 Page

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For 4 banks x 1m x 16bit synchrono Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |   

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