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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0921A
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| OCR Text |
...5 -
Limits
Typ. 1100 370 33 38 17 11 Max. 1800 -5.0 15
Unit
mA V mS dBm % dB C/W
*1:Channel to case /
Above parameters, rating...9.40 7.23 4.59 1.36 -2.57 -7.38 -13.23 -20.32 -28.83 -38.94 -50.78 -64.45 -79.99 -97.34 (mag) 0.605 ... |
| Description |
LnS Band GaAs FET
L & S BAND GaAs FET
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| File Size |
427.43K /
24 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0917A
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| OCR Text |
...High power added efficiency add=38%(TYP.) @f=1.9GHz,Pin=4dBm * Hermetic Package
APPLICATION
* For UHF Band power amplifiers
Fig.1
...9 55 Max. 200 -5.0 75
Unit
mA V mS dBm % dB dB C/W
*1:Channel to case /
Above parameters, ... |
| Description |
L & S BAND GaAs FET [ SMD non matched ]
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.54K /
4 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0915A
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| OCR Text |
...6 30.92 32.93 34.72 36.22 37.37 38.13 38.46 38.33 37.72 36.59 34.92 32.68 29.84 26.34 22.15 17.18 11.37 4.61 -3.21 -12.23 -22.60 -34.51 -48....9.76 9.23 8.90 8.65 8.38 8.06 7.75 7.43 7.36 8.18 7.75 7.31 6.86 6.36 5.75 5.26 4.77 4.21
Gate Ma... |
| Description |
L & S BAND GaAs FET[ SMD non - matched ]
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| File Size |
1,309.44K /
48 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0913A
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| OCR Text |
...38.53 123.05 104.53 83.65 61.24 38.21 15.46 -6.26 -26.32 -44.27 -59.90 -73.16 -84.19 -93.24 -100.63 -106.66 -111.48 -115.02 -116.79
(Ta=2...9.28 -16.17 -23.85 -32.41 -41.99 -52.79 -65.01 -78.79 -94.17 -110.98 -128.75 -146.58 -163.02 -175.89... |
| Description |
L & S BAND GaAs FET [ SMD non - matched ]
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| File Size |
43.80K /
4 Page |
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it Online |
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Infineon
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| Part No. |
V23806-A84-C20
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| OCR Text |
... .800 (15.88 0.5 ) .625 .020 (38.62 0.1 ) 1.52 .004 (12.6 0.3 ) .496 .012 ? 0.1 m ? .004 m ? 0.3 m ? .012 m a a ? 0.3 m ? .012 m...9.6 +0.1 ) .378 +.004 8x 2.54=20.32 8x .100 =.800 20.32 .800 (2.54) .10 0 9x (0.8) min. .0... |
| Description |
SM 155 Mbd ATM/SDH/SONET Transceiver
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| File Size |
117.54K /
5 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGF0912A
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| OCR Text |
...High power added efficiency add=38%(TYP.) @f=1.9GHz,Pin=33dBm * Hermetic Package
A
O2.2
0.6*}0.2 B
A
APPLICATION
* For L/S B...9.0*}0.2 14.0
(Ta=25C)
0.65
Delivery
Tray
1.650.1
RECOMMENDED BIAS CONDITIONS
5.0... |
| Description |
L & S BAND GaAs FET
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| File Size |
24.00K /
3 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
MGF0910A_1 MGF0910A MGF0910A1
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| OCR Text |
....3GHz 10 - - Limits Typ - 1.5 - 38 11 45 - Max 5.0 - -5 - - - 5.5 Unit A S V dBm dB % C/W
Linear power gain *2 Power added efficiency at ...9 dB 13 12 11 PO 10 39
GLP,P1dB, ID and add vs. VDS (f=2.3GHz)
ID=1.3A GLP
P1dB 30 37 50 40 3... |
| Description |
L, S BAND POWER GaAs FET
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| File Size |
176.99K /
4 Page |
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it Online |
Download Datasheet |
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