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NEC[NEC]
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| Part No. |
NE23300
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| OCR Text |
...VDS = 2 V, IDS = 10 mA
4.5 4.0 3.5 3.0 NF 2.5 2.0 1.5 1.0 0.5 0 1 10 40 16 14 12 10 8 6 GA 22 20 18
* HIGH ASSOCIATED GAIN: 10.5 dB Typi...76 0.71 0.64 0.55 0.48 0.41 0.37 0.35 0.37 0.38 0.39 0.40 ANG 8 17 41 63 77 95 112 130 144 164 180 -... |
| Description |
SUPER LOW NOISE HJ FET (SPACE QUALIFIED)
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| File Size |
53.48K /
5 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE32500N NE32500 NE32500M
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| OCR Text |
... Source Leakage Current, VGS = -3 V Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 A Thermal Resistance1 (Channel to Case) UNITS dB dB m...76 71 66 62 58 55 51 47 43 40 37 34 32 29 27 24 22 20 MAG 0.564 0.562 0.559 0.557 0.551 0.546 0.539 ... |
| Description |
C TO KA BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET CHIP
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| File Size |
79.64K /
3 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NE32584C_98 NE32584C NE32584C-S NE32584C-T1 NE32584C98
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| OCR Text |
... Source Leakage Current, VGS = -3 V Thermal Resistance (Channel to Ambient) Thermal Resistance (Channel to Case)
GA1 IDSS VP gm IGSO RTH ...76 0.69 0.63 0.59 0.54 0.48 0.40 0.31 ANG 22 45 70 96 122 147 171 -165 -144 Rn/50 0.27 0.25 0.18 0.1... |
| Description |
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
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| File Size |
50.69K /
6 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NE38018_00 NE38018 NE38018-TI-67 NE38018-TI-68
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| OCR Text |
... = 2 V, ID= 5 mA
25 20
GA 3
15 10
* HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz * LG = 0.6 m, WG = 800 m * TAPE & REEL PACKAG...76.53 72.59 56.83 44.71 35.02 26.80 19.51 12.72 6.47 -5.34 -16.40 -28.79 -42.18 -56.42 -71.03 -85.60... |
| Description |
GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package)
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| File Size |
63.98K /
9 Page |
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it Online |
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CEL[California Eastern Labs]
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| Part No. |
NE662M16-T3-A NE662M16
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| OCR Text |
... = 5 mA Gain Bandwidth at VCE = 3 V, IC = 30 mA, f = 2 GHz Maximum Stable Gain4 at VCE = 2 V, IC = 20 mA, f = 2 GHz Insertion Power Gain at ...76 0.74 0.73 0.71 0.69 0.68 0.66 0.65 0.64 0.64 0.63 0.62 0.61 0.60 0.60 0.59 0.58 0.58 0.57 0.57 0.... |
| Description |
NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
153.11K /
10 Page |
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it Online |
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NEC[NEC]
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| Part No. |
NE67383 NE67300
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| OCR Text |
...CIATED GAIN vs. FREQUENCY VDS = 3 V, IDS = 10 mA
5 GA 4 16 20
3
12
* LG = 0.3 m, WG = 280 m * N+ CONTACT LAYER (Triple Epitaxial T...76 63 MAG .04 .06 .08 .09 .10 .10 .11 .11 .11 S12 ANG 79 66 56 51 48 43 44 43 40 MAG .59 .58 .54 .50... |
| Description |
LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
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| File Size |
94.09K /
7 Page |
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it Online |
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Duracell
CEL[California Eastern Labs]
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| Part No. |
NE677M04-T2-A NE677M04
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| OCR Text |
... 2
+0.30
2.050.1 1.250.1
3
2.00.1
R54
1.25 0.650.65
0.650.65
DESCRIPTION
NEC's NE677M04 is fabricated using NEC's HFT...76.80 61.76 53.97 47.84 44.49 41.61 40.18 39.74 39.29 39.40 40.48 41.76 41.66 42.00 42.28 40.73 38.2... |
| Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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| File Size |
127.21K /
8 Page |
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it Online |
Download Datasheet |
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