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  36.0v Datasheet PDF File

For 36.0v Found Datasheets File :: 679    Search Time::0.906ms    
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    HGTG40N6 HGTG40N60B3

HARRIS[Harris Corporation]
Part No. HGTG40N6 HGTG40N60B3
OCR Text ...ction temperature. 2. VCE(PK) = 360V, TC = +125oC, RGE = 25. CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright (c) Harris Corporation 1995 File Number ...
Description From old datasheet system
70A, 600V, UFS Series N-Channel IGBT

File Size 65.40K  /  6 Page

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    IRF[International Rectifier]
Part No. IRGIB15B60KD1 IRGIB15B60KD1P IRGIB15B60KD1PBF
OCR Text ... = 150C, Vp = 600V, RG = 22 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 15A, L = 1.07mH VGE = 15V, RG = 22 di/dt = 875A/s 22 4 CT2 CT3 WF4 WF4 17,18,19 20,21 CT4,WF3 s A J ns A nC Vcc =80% (VCES), VGE = 20V, L =100H, R...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 275.00K  /  12 Page

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    IRF[International Rectifier]
Part No. IRGIB6B60KD
OCR Text ...= 150C, Vp = 600V, RG = 100 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 5.0A, L = 1.4mH VGE = 15V, RG = 100, Ls= 150nH di/dt = 400A/s 17,18,19 20,21 CT4,WF3 Vcc =80% (VCES), VGE = 20V, L =100H, RG = 50. Energy losses includ...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 270.40K  /  12 Page

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    IRF[International Rectifier]
Part No. IRGIB7B60KD
OCR Text ...= 150C, Vp = 600V, RG = 100 VCC=360V,VGE = +15V to 0V TJ = 150C VCC = 400V, IF = 8.0A, L = 1.07mH VGE = 15V, RG = 50 di/dt = 500A/S 22 4 CT2 CT3 WF4 WF4 17,18,19 20,21 CT4,WF3 Peak Short Circuit Collector Current Reverse Recovery E...
Description 600V Low-Vceon Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 432.54K  /  12 Page

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    IRAMS06UP60B

IRF[International Rectifier]
Part No. IRAMS06UP60B
OCR Text ...-- s TJ=150C, VP=600V, V+=360V, VDD =+15V to 0V See CT2 Thermal Resistance Symbol Rth(J-C) Parameter Junction to case thermal resistance, each IGBT under inverter operation. Junction to case thermal resistance, each Diode under in...
Description Plug N Drive Integrated Power Module for Appliance Motor Drive

File Size 406.56K  /  18 Page

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    CT20VM-8

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT20VM-8
OCR Text ... VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satisfy the rating of maximum pulse collector current. And reverse gate current during turn-off must be kept less than 1A. (I...
Description STROBE FLASHER USE

File Size 23.73K  /  2 Page

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    IRG4BC29K IRG4BC30K IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC29K IRG4BC30K IRG4BC30
OCR Text ...d for motor control, tsc =10s, @360V VCE (start), TJ = 125C, VGE = 15V * Combines low conduction losses with high switching speed * Latest generation design provides tighter parameter distribution and higher efficiency than previous generat...
Description 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.21V, @Vge=15V, Ic=16A)

File Size 135.84K  /  8 Page

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    Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. ISL9V5036P3 ISL9V5036S3S ISL9V5036S3
OCR Text 360V, N-Channel Ignition IGBT General Description The ISL9V5036S3S, ISL9V5036P3, and ISL9V5036S3 are the next generation IGBTs that offer outstanding SCIS capability in the D Pak (TO-263) and TO-220 plastic package. These devices are inte...
Description EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT 46 A, 420 V, N-CHANNEL IGBT, TO-220AB
EcoSPARKTM 500mJ, 360V, N-Channel Ignition IGBT 46 A, 420 V, N-CHANNEL IGBT, TO-263AB
EcoSPARKTM 500mJ 360V N-Channel Ignition IGBT

File Size 166.60K  /  8 Page

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    IRGPC40KD2 1983

IRF[International Rectifier]
Part No. IRGPC40KD2 1983
OCR Text ...g. 9, 10, 11, 18 4.2 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 10, VCPK < 500V Turn-On Delay Time ---70 ---TJ = 150C, See Fig. 9, 10, 11, 18 t d(on) Rise Time ---86 ---ns IC = 25A, VCC = 480V tr t d(off) Turn-Off Delay Time ---- 280 ---VGE...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated
From old datasheet system

File Size 146.07K  /  9 Page

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    IRGPC40K 1982

IRF[International Rectifier]
Part No. IRGPC40K 1982
OCR Text ...g. 9, 10, 11, 14 2.6 ---s VCC = 360V, TJ = 125C VGE = 15V, RG = 10, VCPK < 500V ---TJ = 150C, ---ns IC = 25A, VCC = 480V ---VGE = 15V, RG = 10 ---Energy losses include "tail" ---mJ See Fig. 10, 14 ---nH Measured 5mm from package ---VGE = 0V...
Description INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
From old datasheet system

File Size 106.55K  /  7 Page

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For 36.0v Found Datasheets File :: 679    Search Time::0.906ms    
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