320v pdf Datasheet P12 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : N2450 NJM79L00 1230G1 22B43 DRS3110 HMC517 SAA73 D9329
	Product Description
	Full Text Search

320v Datasheet PDF File

For 320v Found Datasheets File :: 704 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				INTERSIL[Intersil Corporation]
Part No.	HGTP14N40F3VL FN3407
OCR Text	...= 10A, RG = 25, L = 550H, VCL = 320v, VGE = 5V, TC = +125oC L = 2.3mH, VG = 5V, Figure 13 TC = +150oC TC = +25oC Inductive Use Test UIS 12 17 - 1.5 - A A oC/W Thermal Resistance RJC 3-51 HGTP14N40F3VL Typical ...
Description	14A/ 400V N-Channel/ Logic Level Voltage Clamping IGBT 14A, 400V N-Channel, Logic Level Voltage Clamping IGBT From old datasheet system
File Size	84.60K / 5 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC360D FSYC360R4 FSYC360D1 FSYC360R FSYC360R3
OCR Text	... Drain Current IDSS VDS = 320v, VGS = 0V VGS = 20V Gate to Source Leakage Current IGSS Drain to Source On-State Voltage Drain to Source On Resistance VDS(ON) rDS(ON)12 VGS = 12V, ID = 21A ID = 13A, VGS = 12V Turn-On ...
Description	Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
File Size	76.16K / 8 Page	View it Online	Download Datasheet

				Microsemi, Corp.
Part No.	APT4020BVFRG
OCR Text	...voltage drain current (v ds = 320v v dss , v gs = 0v, t c =125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 1.0ma) 050-5635 rev a 5-2006 maximum ratings all ratings: t c...
Description	Power FREDFET; Package: TO-247 [B]; ID (A): 23; RDS(on) (Ohms): 0.2; BVDSS (V): 400; 23 A, 400 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
File Size	69.96K / 4 Page	View it Online	Download Datasheet

				ST Microelectronics
Part No.	STB11NB40
OCR Text	... charge gate-drain charge v dd =320v i d =10.7a v gs = 10 v 29.5 10.6 11.8 43 nc nc nc switching off symbol parameter test conditions min. typ. max. unit t r(voff) t f t c off-voltage rise time fall time cross-over time v dd =320v i d =10.7...
Description	N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
File Size	246.96K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF340 IRF340-15
OCR Text	...50mA VDS > 15V, IDS = 6.0A VDS=320v, VGS=0V VDS = 320v VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS = 10V, ID =10A VDS = 200V VDD =200V, ID =10A, RG =9.1 Drain-to-Source Breakdown Voltage Temperature Coefficient of Breakdown Voltage Sta...
Description	Repetitive Avalanche Ratings TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A) HEXFET?TRANSISTORS 400V, N-CHANNEL 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
File Size	144.70K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFN350 JANTX2N7227U
OCR Text	...age drain current ? ? 25 v ds = 320v ,v gs =0v ? ? 250 v ds = 320v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 110 v...
Description	400V Single N-Channel Hi-Rel MOSFET in a SMD-1 package
File Size	181.42K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP360LCPBF
OCR Text	... v gs = 0v ??? ??? 250 v ds = 320v , v gs = 0v, t j = 125c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 v gs = -20v q g total gate charge ??? ??? 110 i d = 23a q gs gate-to-source...
Description	400V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
File Size	156.63K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	JANTXV2N6768 JANTX2N6768 2472
OCR Text	... =250A VDS > 15V, IDS =9.0A VDS=320v, VGS=0V VDS =320v VGS = 0V, TJ = 125C VGS =20V VGS =-20V VGS =10V, ID=14A VDS =200V VDD =200V, ID =14A, RG =2.35 IGSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gat...
Description	TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)=0.300ohm, Id=14A) From old datasheet system HEXFET? TRANSISTOR
File Size	143.69K / 7 Page	View it Online	Download Datasheet

				Rohm
Part No.	RF201L4S
OCR Text	...c d=t/t t v r io v r =320v 0a 0v on glass - epoxy substrate soldering land 10mm 0 0.5 1 1.5 2 2.5 0 30 60 90 120 150 d.c. d=0.5 d=0.2 d=0.1 d=0.05 half sin wave d=0.8 average rectified forward current:...
Description	Super Fast Recovery Diode
File Size	1,153.11K / 5 Page	View it Online	Download Datasheet

				Microsemi Corporation
Part No.	2N7227
OCR Text	...in current v gs = 0v, v ds = 320v v gs = 0v, v ds = 320v, t j = +125c i dss1 i dss2 25 0.25 adc madc static drain-source on-state resistance v gs = 10v, i d = 9.0a pulsed v gs = 10v, i d = 14.0a pulsed t j ...
Description	N-CHANNEL MOSFET
File Size	93.30K / 2 Page	View it Online	Download Datasheet

For 320v Found Datasheets File :: 704 Search Time::1.375ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |