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NTE[NTE Electronics]
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Part No. |
NTE2371
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OCR Text |
.... . . . . . . . . . . . . . . . 19a TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13A Pulsed Drain Current (Note 1), IDM . . . . . . . . . . . . ... |
Description |
MOSFET P-Ch, Enhancement Mode High Speed Switch
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File Size |
27.30K /
3 Page |
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IXYS[IXYS Corporation]
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Part No. |
IXFR38N80Q2
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OCR Text |
...
Notes: 1. Test current IT = 19a 2. See IXFK38N80Q2 data sheet for characteristic curves
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S... |
Description |
Electrically Isolated Back Surface
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File Size |
564.48K /
5 Page |
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IRF[International Rectifier]
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Part No. |
IRLIB4343
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OCR Text |
... 20V VGS = -20V VDS = 25V, ID = 19a VDS = 44V VGS = 10V ID = 19a See Fig. 6 and 19 VDD = 28V, VGS = 10V ID = 19a RG = 2.5 e VDS = VGS, ID = 250A
= 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to -44V Between lead, 6mm (0.25in.) from package and... |
Description |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 Full-Pak package DIGITAL AUDIO MOSFET From old datasheet system
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File Size |
227.93K /
7 Page |
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IRF[International Rectifier]
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Part No. |
IRHYS67134CM IRHYS63134CM
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OCR Text |
...S63134CM 300K Rads (Si) 0.09 ID 19a 19a
IRHYS67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event E... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
187.62K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHYS67130CM IRHYS63130CM
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OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 19a A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 19a A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 50V VDD = 50V, ID = 20A VGS =12V, RG = 7.5
IGSS IGSS Qg Q g... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
180.77K /
8 Page |
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Intersil, Corp. Intersil Corporation
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Part No. |
HUF76419S3S HUF76419P3 FN4669
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OCR Text |
... VGS = 10V (Figures 9, 10) ID = 19a, VGS = 5V (Figure 9) ID = 18A, VGS = 4.5V (Figure 9) THERMAL SPECIFICATIONS Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient RJC RJA TO-220 and TO-263 2.0 62
oC/W oC/W
TC = 2... |
Description |
27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFET 29 A, 60 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB From old datasheet system
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File Size |
332.27K /
9 Page |
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IRF[International Rectifier]
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Part No. |
IRHYB67134CM IRHYB63134CM
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OCR Text |
...B63134CM 300K Rads (Si) 0.09 ID 19a 19a
IRHYB67134CM 150V, N-CHANNEL
TECHNOLOGY
International Rectifier's R6 TM technology provides superior power MOSFETs for space applications. These devices have improved immunity to Single Event E... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
177.77K /
8 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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Part No. |
IRHYB597Z30CM IRHYB67130CM IRHYB593Z30CM IRHYB63130CM
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OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 19a A VDS = VGS, ID = 1.0mA VDS = 15V, IDS = 19a A VDS = 80V ,VGS=0V VDS = 80V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 20A VDS = 50V VDD = 50V, ID = 20A VGS =12V, RG = 7.5
IGSS IGSS Qg Q g... |
Description |
RADIATION HARDENED POWER MOSFET THRU-HOLE (Low-Ohmic TO-257AA)
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File Size |
170.63K /
8 Page |
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IRF[International Rectifier]
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Part No. |
IRHN57250SE
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OCR Text |
...25C, ID = 1.0mA VGS = 12V, ID = 19a A VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 19a A VDS= 160V ,VGS=0V VDS = 160V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VGS =12V, ID = 31A VDS = 100V VDD = 100V, ID = 31A, VGS =12V, RG = 2.35
IGSS IGSS ... |
Description |
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-1)
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File Size |
173.24K /
8 Page |
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