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Integrated Device Technology, Inc.
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| Part No. |
IDT71V67613S200BQ IDT71V67613S183BG IDT71V67613S200PF IDT71V67613S183PF IDT71V67613S183BQ IDT71V67613S200BG
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| OCR Text |
...hz 3.1ns clock access time C 183mhz 3.3ns clock access time u u u u u lbo input selects interleaved or linear burst mode u u u u u self-timed write cycle with global write control ( gw ), byte write enable ( bwe ), and byte writes ( ... |
| Description |
256K X 36 CACHE SRAM, 3.1 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.3 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
256K X 36 CACHE SRAM, 3.1 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PQFP100 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
256K X 36 CACHE SRAM, 3.3 ns, PBGA165 13 X 15 MM, FINE PITCH, BGA-165
256K X 36 CACHE SRAM, 3.1 ns, PBGA119 14 X 22 MM, PLASTIC, BGA-119
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| File Size |
513.76K /
23 Page |
 View
it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4D263238M-QC40
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| OCR Text |
... & vddq = 2.5v k4d263238m-qc55 183mhz 366mbps/pin k4d263238m-qc60 166mhz 333mbps/pin
128m ddr sdram k4d263238m - 5 - rev. 1.1 (mar. 2001) preliminary pin configuration (top view) pin description ck, ck differential clock inpu... |
| Description |
4M X 32 DDR DRAM, 0.6 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
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| File Size |
151.28K /
19 Page |
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it Online |
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Samsung Semiconductor Co., Ltd.
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| Part No. |
K4D263238M-QC50 K4D263238M-QC500 K4D263238M-QC45 K4D263238M-QC600 K4D263238M-QC55 K4D263238M-QC450 K4D263238M-QC550
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| OCR Text |
...hz 400mbps/pin k4d263238m-qc55 183mhz 366mbps/pin k4d263238m-qc60 166mhz 333mbps/pin
128m ddr sdram k4d263238m - 5 - rev. 1.3 (aug. 2001) pin configuration (top view) pin description ck, ck differential clock input ba 0 , ba... |
| Description |
DIODE ZENER DUAL COMMON-CATHODE 300mW 3Vz 5mA-Izt 0.0667 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.7 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
DIODE ZENER DUAL COMMON-CATHODE 300mW 39Vz 5mA-Izt 0.0513 0.1uA-Ir 29 SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
4M X 32 DDR DRAM, 0.75 ns, PQFP100 20 X 14 MM, 0.65 MM PITCH, TQFP-100
1M x 32Bit x 4 Banks Double Data Rate Synchronous RAM with Bi-directional Data Strobe and DLL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
DIODE ZENER DUAL COMMON-CATHODE 300mW 3.3Vz 5mA-Izt 0.0606 0.1uA-Ir SOT-23 3K/REEL 100万x 32Bit的4银行双数据速率同步RAM的双向数据选通和DLL
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| File Size |
284.29K /
19 Page |
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it Online |
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Samsung Electronic
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| Part No. |
K4D623238B-GQC
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| OCR Text |
... 400mbps/pin k4d623238b-gc/l55 183mhz 366mbps/pin k4d623238b-gc/l60 166mhz 333mbps/pin
64m ddr sdram k4d623238b-gc - 4 - rev. 1.2 (sep. 2001) pin configuration (top view) pin description ck, ck differential clock input ba 0 ... |
| Description |
512K x 32Bit x 4 Banks Double Data Rate Synchronous RAM wi Extended Data Out Data Sheet
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| File Size |
289.92K /
17 Page |
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it Online |
Download Datasheet |
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IDT
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| Part No. |
IDT71V25761S166PF8 IDT71V25761S166PFI
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| OCR Text |
...me commercial and industrial: ? 183mhz 3.3ns clock access time ? 166mhz 3.5ns clock access time lbo input selects interleaved or linear burst mode self-timed write cycle with global write control ( gw ), byte write enable (... |
| Description |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O
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| File Size |
617.90K /
22 Page |
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it Online |
Download Datasheet |
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IDT
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| Part No. |
IDT71V25761S166PFI8
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| OCR Text |
...me commercial and industrial: C 183mhz 3.3ns clock access time C 166mhz 3.5ns clock access time u u u u u lbo input selects interleaved or linear burst mode u u u u u self-timed write cycle with global write control ( gw ), byte writ... |
| Description |
3.3V 128K x 36 Synchronous PipeLined Burst SRAM with 2.5V I/O
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| File Size |
279.68K /
22 Page |
View
it Online |
Download Datasheet |
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