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  128m-byte Datasheet PDF File

For 128m-byte Found Datasheets File :: 1013    Search Time::2.672ms    
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    Samsung
Part No. K9F2808U0C
OCR Text ... or 8Mx16bit, the K9F28XXU0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost...byte(X8 device) or 264-word(X16 device) page and an erase operation can be performed in typical 2ms ...
Description IC,EEPROM,NAND FLASH,16MX8,CMOS,TSSOP,48PIN,PLASTIC
From old datasheet system

File Size 317.17K  /  32 Page

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    Samsung Electronic
Part No. KBE00F005A-D411
OCR Text ...zation - memory cell array : (128m + 4096k)bit x 8 bit - data register : (512 + 16)bit x 8bit ? automatic program and erase - page program : (512 + 16)byte - block erase : (16k + 512)byte ? page read operation - page size : (512...
Description 512Mb NAND*2 256Mb Mobile SDRAM*2

File Size 1,354.35K  /  87 Page

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    K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W8G08U1M K9K4G16U0M K9K4G08U0M K9K4G08Q0M K9K4G16Q0M
OCR Text ...K9XXGXXXXM is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage ...byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle t...
Description 512M x 8 Bit / 256M x 16 Bit NAND Flash Memory

File Size 597.69K  /  38 Page

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    TH58NS100DC

Toshiba Semiconductor
Part No. TH58NS100DC
OCR Text 128m 8 bits) cmos nand e 2 prom (128m byte smartmedia tm ) description the th58ns100 is a single 3.3-v 1-gbit (1,107,296,256) bit nand electrically erasable and programmable read-only memory (nand e 2 prom) organized as 528 bytes ...
Description    TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1 - GBIT (128M X 8 BITS) CMOS NAND E2PROM ( 128M BYTE SmartMediaTM )

File Size 433.50K  /  43 Page

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    K9F4G08U1M

Samsung semiconductor
Part No. K9F4G08U1M
OCR Text ...t nand flash memo ry with spare 128m-bit. its nand cell provides the most cost- effective solution for the solid state application marke t....byte page and an erase operation can be performed in typical 1.5ms on a (128k+4k)byte block. data i...
Description 512M x 8 Bits / 1G x 8 Bits NAND Flash Memory

File Size 1,034.14K  /  41 Page

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    K9F4G08U0A

Samsung semiconductor
Part No. K9F4G08U0A
OCR Text ...t nand flash memo ry with spare 128m-bit. its nand cell provides the most cost- effective solution for the solid state application marke t. ...byte page and an erase operation can be performed in typical 1.5ms on a (128 k+4k)byte block. data i...
Description (K9xxG08UxA) FLASH MEMORY

File Size 1,079.16K  /  43 Page

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    K7Z167288B K7Z163688B

Samsung semiconductor
Part No. K7Z167288B K7Z163688B
OCR Text ...b nc dqb dqb c nc nc nc bw d nc(128m) e1 nc nc bw a dqb dqb d nc nc v ss vref nc mcl nc vref v ss dqb dqb e nc dqpc v ddq v ddq v dd v dd v ...byte write enable input active low ck clock input active high dq data i/o input/output - cq echo cl...
Description 512Kx36 & 256Kx72 DLW(Double Late Write) RAM

File Size 239.63K  /  20 Page

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    CY7C1370B CY7C1372B

Cypress Semiconductor
Part No. CY7C1370B CY7C1372B
OCR Text ...ss 891011 nc aa adv/ld a oe a a 128m v ss v ddq nc dpa v ddq v dd nc dqa dqa nc nc nc dqa nc v dd v ddq v dd v ddq dqa v dd nc v dd nc v dd ...byte write select inputs, active low . qualified with we to conduct writes to the sram. sampled on...
Description (CY7C1370B / CY7C1372B) 512K X 36/1M X 18 Pipelined SRAM

File Size 814.25K  /  27 Page

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    Toshiba
Part No. TC58NS100DC
OCR Text 128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia DESCRIPTION ) The TC58NS100 is a single 3.3-V 1-Gbit (1,107,296,256) bit NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as 528 bytes x 32 page...
Description 1 GBit CMOS NAND EPROM

File Size 533.91K  /  44 Page

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    K9G4G08U0A-P K9G4G08X0A K9G4G08U0A-I K9G4G08B0A

Samsung semiconductor
Part No. K9G4G08U0A-P K9G4G08X0A K9G4G08U0A-I K9G4G08B0A
OCR Text ...it nand flash memory with spare 128m-b it. the device is offered in 2.7v and 3.3v vcc. its nand cell provides the most cost-effective soluti...byte page and an erase operation can be performed in typical 1.5ms on a (256k+8k)byte block. data in...
Description    512M x 8 Bit / 1G x 8 Bit NAND Flash Memory

File Size 745.69K  /  44 Page

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