| |
|
 |
California Eastern Laboratories, Inc.
CEL[California Eastern Labs]
|
| Part No. |
NE67483B NE67400
|
| OCR Text |
1.4 dB TYP at f = at 12 GHz
Noise Figure, NF (dB)
NE67400 NE67483B
NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY
24 VDS = 3 V ID = 10 ...929 1.854 1.815 1.758 1.714 1.666 1.657 1.624 1.597 1.577 1.542 1.500 1.483 1.462 1.455 1.451 1.433 ... |
| Description |
NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET 邻舍L降至Ku波段低噪声放大器N沟道功率GaAs MESFET
|
| File Size |
103.82K /
7 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF927T3 MRF927T1
|
| OCR Text |
... * High Gain (GUmax 15 dB Typ @ 1.0 GHz) @ 1.0 mA * Small, Surface-Mount Package (SC-70) * High Current Gain-Bandwidth Product at Low Curren...929 0.889 0.895 0.876 0.772 0.670 0.564 0.477 0.412 0.364 0.308 0.297 0.983 0.977 0.965 0.953 0.947 ... |
| Description |
LOW NOISE HIGH FREQUENCY TRANSISTOR
|
| File Size |
162.35K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
MOTOROLA[Motorola, Inc]
|
| Part No. |
MRF373S MRF373
|
| OCR Text |
...ress at All Phase Angles with 5:1 VSWR @ 28 Vdc, 860 MHz, 60 Watts CW
CASE 360B-03, STYLE 1 (MRF373)
G
CASE 360C-03, STYLE 1 (MRF37...929 0.932 0.936 0.940 0.945 0.951 0.957 182 181 180 179 178 177 176 176 175 174 173 |S21| 2.23 1.95... |
| Description |
The RF MOSFET Line RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
|
| File Size |
214.48K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
MACOM[Tyco Electronics]
|
| Part No. |
MRF173
|
| OCR Text |
...liability * Low Noise Figure -- 1.5 dB Typ at 2.0 A, 150 MHz * Excellent Thermal Stability; Suited for Class A Operation
G S
MRF173
80 ...929 0.929 0.927 0.926 0.925 0.923 0.921 0.920 0.919 0.919 0.917 0.916 0.917 0.915 0.914 0.913 0.909 ... |
| Description |
N-CHANNEL BROADBAND RF POWER MOSFET
|
| File Size |
144.64K /
8 Page |
View
it Online |
Download Datasheet |
| |
|
|
MACOM[Tyco Electronics]
|
| Part No. |
MRF151G
|
| OCR Text |
...should be observed.
REV 9
1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
...929 0.944 0.965 0.953 0.954 0.935 0.950 0.950 0.949 0.937 0.922 0.929 0.931 0.904 0.909 0.884 0.874 ... |
| Description |
N-CHANNEL BROADBAND RF POWER MOSFET
|
| File Size |
234.52K /
9 Page |
View
it Online |
Download Datasheet |
| |
|
|
FREESCALE[Freescale Semiconductor, Inc]
|
| Part No. |
MMG3012NT1
|
| OCR Text |
1, 8/2005
Heterojunction Bipolar Transistor Technology (InGaP HBT)
Broadband High Linearity Amplifier
The MMG3012NT1 is a General Purpo...929 132.851 130.925 129.243 127.648 126.06 124.504 122.941 121.556 120.247 118.779 117.547 116.463 1... |
| Description |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
| File Size |
208.99K /
12 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| Part No. |
MGFC45B3436B
|
| OCR Text |
...h appropriate measures such as (1)placement of substitutive, auxiliary circuits, (2)use of non-flammable material or (3)prevention against a...929 0.927 0.918 0.912 0.905 0.882 0.864 0.809 0.728 0.593 0.375 0.148 0.259 0.452 0.587 0.666 0.716 ... |
| Description |
3.4 - 3.6GHz BAND 30W INTERNALLY MATCHED GaAs FET
|
| File Size |
412.57K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
JIANGHAI[Jianghai Europe GmbH]
|
| Part No. |
CD295BC
|
| OCR Text |
...rent is not more than 0,01CV or 1,5mA, whichever is smaller C: Nominal Capacitance (F) V: Rated Voltage (V) Rated Voltage (V)
10 16 2 0 6~...929 929 774 774 634 634 634 516 516 516 516 Max Ripple Current 85C, 120Hz (Arms) 3,1 3,2 3,0 3,7 3,5... |
| Description |
EC Snap-In 85∑C Long Lifetime 6.000h High Ripple Currents(Snap-In)
|
| File Size |
908.34K /
5 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
