1.5-ampere pdf Datasheet P12 Full Text Search --- IC-ON-LINE

1.5-ampere Datasheet PDF File

For 1.5-ampere Found Datasheets File :: 6202 Search Time::1.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |

				POWEREX INC POWEREX[Powerex Power Semiconductors]
Part No.	CDD11210 CDD11610
OCR Text	...Amperes/1200-1600 Volts A B 1 2 3 H K - DIA. (2 TYP.) D G E E L - M5 THD (3 TYP.) C A F J CDD11210, CDD116...5 Max. 80 30 Max. 26 Max. 23 21 16.5 12.5 6.5 Dia. 6.5 M5 Dimension A B C D E F G H J K L Inch...
Description	Dual Diode POW-R-BLOK??Modules 100 Amperes/1200-1600 Volts Dual Diode POW-R-BLOK⑩ Modules 100 Amperes/1200-1600 Volts Dual Diode POW-R-BLOK Modules 100 Amperes/1200-1600 Volts
File Size	71.25K / 4 Page	View it Online	Download Datasheet

				GE Security, Inc. GE[General Semiconductor]
Part No.	EGL34B BYM07-400 BYM07-100 BYM07-150 BYM07-200 BYM07-300 EGL34G BYM07-50 EGL34A EGL34C EGL34D EGL34F
OCR Text	... E D2 D1= 0.066 0.060 (1.676) (1.524) 0.022 (0.559) 0.016 (0.406) 0.145 (3.683) 0.131(3.327) 1st band denotes type and polarity ...5 seconds at terminals. Complete device submersible temperature of 260C for 10 seconds in solder bat...
Description	SURFACE MOUNT GLASS PASSIVATED JUNCTION FAST EFFICIENT RECTIFIER 表面贴装玻璃钝化结快速高效整
File Size	84.34K / 2 Page	View it Online	Download Datasheet

				POWEREX INC POWEREX[Powerex Power Semiconductors] Powerex Powers
Part No.	LD410860 LD411060 LD412460 LD4160 LD411260
OCR Text	...lts K G D 3 2 1 L Q - DIA. (4 TYP.) H P - M10 THD (3 TYP.) Features: T T T T T Electrically Isolated Heatsinki...5.91 4.88 4.41 2.36 2.05 1.97 1.89 1.73 1.22 1.10 1.00 0.69 0.39 M10 Metric 0.26 Dia. 0.24 0.12 .110...
Description	POW-R-BLOK Dual Diode Isolated Module (600 Amperes / Up to 2400 Volts)
File Size	99.58K / 5 Page	View it Online	Download Datasheet

				Powerex Power Semicondu... POWEREX[Powerex Power Semiconductors]
Part No.	LS410860 LS411060 LS412460 LS4160 LS411260
OCR Text	...ions Dimension A B Inches 3.15 1.50 2.05 3.62 1.97 0.39 0.24 0.79 0.99 0.48 0.12 1.45 1.76 M10 Metric 0.22 Dia. 0.99 Millimeters 80.0 38.0 52.1 92.0 50.0 9.9 6.1 20.1 25.1 12.2 3.1 36.8 44.7 M10 5.6 Dia. 25.1 Benefits: T No Additional ...
Description	POW-R-BLOK Single Diode Isolated Module (600 Amperes / Up to 2400 Volts)
File Size	94.63K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	M52348SP
OCR Text	...(G) VCC1(B) INPUT1(B) INPUT1(H) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 32 31 30 29 28 27 VCC2(R) OUTPUT(R) GND VCC2(G) OUTPUT(G) GND VCC2(B) OUTPUT(B) GND OUTPUT (for Sync on G) NC VCC M52348SP 26 25 24 23 22 21 FEATURES INPUT1(V) GND...
Description	WIDE FREQUENCY BAND ANALOG SWITCH From old datasheet system
File Size	65.90K / 10 Page	View it Online	Download Datasheet

				Motorola, Inc. Motorola Inc ONSEMI[ON Semiconductor]
Part No.	MJ11013 MJ11015 MJ11014 MJ11016 ON1974 MJ11012
OCR Text	...STICS MAXIMUM RATINGS REV 1 Maximum Lead Temperature for Soldering Purposes for 10 Seconds. Thermal Resistance, Junction to Case Opera...5 BASE NPN MJ11012 MJ11014 MJ11016 0.87 Max 275 MJ11015 MJ11016 120 120 ...
Description	30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS From old datasheet system 30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60-120 VOLTS 200 WATTS
File Size	157.00K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc. MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
Part No.	MJ11029 MJ11031 MJ11028 MJ11030 MJ11033 ON1976 MJ11032
OCR Text	... IC ICM PD IB Figure 1. Darlington Circuit Schematic 25 COLLECTOR EMITTER MJ11028 MJ11029 Symbol RJC TL ...5 BASE NPN MJ11028 MJ11030 MJ11032 0.584 Max 275 MJ11032 MJ11033 120 120 ...
Description	50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS From old datasheet system 50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60-120 VOLTS 300 WATTS
File Size	153.83K / 4 Page	View it Online	Download Datasheet

				Motorola, Inc. ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
Part No.	MJE13005 ON2008
OCR Text	...ing Applications Information. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data These devices are designed for high-voltage, high-speed power switching inductive circuit...
Description	GT 5C 2#4 3#12 PIN RECP From old datasheet system SEMICONDUCTOR TECHNICAL DATA 4 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 75 WATTS
File Size	311.16K / 8 Page	View it Online	Download Datasheet

				ONSEMI[ON Semiconductor] MOTOROLA[Motorola, Inc]
Part No.	MJE13009 ON2010
OCR Text	...ing Applications Information. (1) Pulse Test: Pulse Width = 5 ms, Duty Cycle 3-676 (c) Motorola, Inc. 1995 Designer'sTM Data Sheet The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall t...
Description	12 AMPERE NPN SILICON POWER TRANSISTOR 400 VOLTS 100 WATTS SEMICONDUCTOR TECHNICAL DATA From old datasheet system
File Size	450.81K / 10 Page	View it Online	Download Datasheet

For 1.5-ampere Found Datasheets File :: 6202 Search Time::1.765ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | <12> | 13 | 14 | 15 |