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  1.25 1.0625 Datasheet PDF File

For 1.25 1.0625 Found Datasheets File :: 1156    Search Time::3.391ms    
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    Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
Part No. AMT8310 AMT8310T46L
OCR Text 1.0 FEATURES * * * * * * * 2.5 Gb/s Differential Output TIA 3.3 V Operation 1800 MHz Bandwidth -23 dBm Typical Sensitivity 0 dBm Optical...25 Gb/s) T46L TO-46 Ball Lens Package PRODUCT DESCRIPTION The ANADIGICS AMT8310, packaged in ...
Description The ANADIGICS AMT8310, packaged in a 4 pin TO-46 lens can, is a 3.3 V integrated photodetector and transimpedance amplifier (TIA) ...
2.5 Gb/s 850 nm PIN-TIA

File Size 266.83K  /  8 Page

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    Anadigics Inc
ANADIGICS[ANADIGICS, Inc]
Part No. AMT8312 AMT8312T46L
OCR Text 1.0 FEATURES * * * * * * * * 2.5 Gb/s Differential Output TIA 3.3 V Operation 1800 MHz Bandwidth -23 dBm Typical Sensitivity 0 dBm Optic...25 Gb/s) T46L TO-46 5 pin Ball Lens Package PRODUCT DESCRIPTION The ANADIGICS AMT8312, packag...
Description The ANADIGICS AMT8312, packaged in a 5 pin TO-46 lens can, is a 3.3 V integrated photodetector and transimpedance amplifier (TIA) ...
2.5 Gb/s 850 nm PIN-TIA

File Size 238.82K  /  8 Page

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    BF720T1_D ON0210 BF720T1

ON Semiconductor
Part No. BF720T1_D ON0210 BF720T1
OCR Text 1 EMITTER 3 BF720T1 Motorola Preferred Device NPN SILICON TRANSISTOR SURFACE MOUNT MAXIMUM RATINGS Rating Collector-Emitter Volta...25 mAdc, VCE = 20 Vdc) Collector-Emitter Saturation Voltage (IC = 30 mAdc, IB = 5.0 mAdc) hFE VCE(sa...
Description NPN SILICON TRANSISTOR SURFACE MOUNT
From old datasheet system

File Size 105.55K  /  6 Page

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    ON Semi
Part No. MMDF2N06V_D ON2163
OCR Text ...751-05, Style 11 SO-8 Source-1 1 2 3 4 8 7 6 5 Drain-1 Drain-1 Drain-2 Drain-2 Features Common to TMOS V and TMOS E-FETS * Av...25 Vdc, VGS = 10 Vdc, Peak IL = 3.3 Apk, L = 10 mH, RG = 25 ) Thermal Resistance, Junction to Ambien...
Description N-hannel Enhancement?ode Silicon Gate
From old datasheet system

File Size 100.12K  /  4 Page

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    ON Semi
Part No. MMDF2N06VL_D ON2164
OCR Text ...751-05, Style 11 SO-8 Source-1 1 2 3 4 8 7 6 5 Drain-1 Drain-1 Drain-2 Drain-2 Features Common to TMOS V and TMOS E-FETS * Av...25 Vdc, VGS = 5.0 Vdc, Peak IL = 3.3 Apk, L = 10 mH, RG = 25 ) Thermal Resistance, Junction to Ambie...
Description N-hannel Enhancement?ode Silicon Gate
From old datasheet system

File Size 101.35K  /  4 Page

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    UDR-500

GHz Technology
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. UDR-500
OCR Text ...ted Conditions MIN 500 8.5 60 5:1 TYP 535 70 MAX UNITS Watts Watts dB % c VSWR BVces BVceo BVebo Hfe Cob jc Collector to Emitter Breakdown Collector to Emitter Breakdown Emitter to Base Breakdown DC Current Gain Output Capaci...
Description 500 Watts - 40 Volts, Pulsed Radar 400 - 450 MHz

File Size 235.23K  /  3 Page

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    26PCSMT 26PC15SMT 26PC05SMT 26PC01SMT

List of Unclassifed Man...
Electronic Theatre Controls, Inc.
ETC[ETC]
Honeywell Sensing
List of Unclassifed Manufacturers
Part No. 26PCSMT 26PC15SMT 26PC05SMT 26PC01SMT
OCR Text 1 psi, 5 psi, 15 psi) FEATURES * Alignment pins for position accuracy * Small package size (less than one half the size of the 26PC) and co...25 C) Min. Typ. Max. Units Excitation Voltage -- 10.0 16.0 Vdc Response Time -- -- 1.0 ms Input Res...
Description From old datasheet system
Microstructure Pressure Sensors

File Size 66.70K  /  4 Page

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    MTD6N15 ON2513 MTD6N15-D

ON Semiconductor
MOTOROLA[Motorola, Inc]
Part No. MTD6N15 ON2513 MTD6N15-D
OCR Text ...ltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -- Continuous Gate-Source Voltage -- Non-Repetitive (tp 50 s) Drain Current -- C...25 0.01 1.75 0.014 - 65 to +150 Unit Vdc Vdc Vdc Vpk Adc Watts W/C Watts W/C Watts W/C C THERM...
Description Power Field Effect Transistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate
TMOS POWER FET 6.0 AMPERES 150 VOLTS RDS(on) = 0.3 OHM
From old datasheet system

File Size 231.61K  /  10 Page

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