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  0.56m Datasheet PDF File

For 0.56m Found Datasheets File :: 143    Search Time::4.109ms    
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    SUMIDA CORP
Part No. CDR910NP-680MC
OCR Text ... 1/2 0 . 2 9 0 7 . 3 7 0 . 1 1 5 2 . 9 2 0.110 2.79 0 . 5 1 0 1 2 . 9 5 max. 0 . 3 0 0 7 . 6 2 0 . 3 3 0 8 . 3 8...56m (45m) 4.24(5.30) 2.88(3.30) cdr910np-330m 330 33 20% 68m (54m) 3.52(4.40) 2.60(2.95) ...
Description 1 ELEMENT, 68 uH, GENERAL PURPOSE INDUCTOR, SMD

File Size 120.86K  /  2 Page

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    SUMIDA CORP
Part No. CDH63NP330MC
OCR Text ...2.9 6.30.2 electrode terminal 1.0 max.6.1 product description ? 6.5 6.1mm max.(l w), 2.9mm max. height. ? inductance range: 1.4 220 ...56m) 2.20 1.70 1.80 cdh63np-3r9m e 3.9 20 92m(73m) 2.00 1.40 1.65 cdh63np-4r7m f ...
Description 1 ELEMENT, 33 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD

File Size 139.25K  /  2 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4707
OCR Text ... ds (v) = 30v, i f = 3a, v f <0.52v@3a the ao4707 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non-synchronous dc-dc converters. ...
Description Dual P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 334.73K  /  5 Page

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    ShenZhen FreesCale Electronics. Co., Ltd
Part No. AO4709
OCR Text ...tky v ds (v) = 30v,if = 3a, vf<0.5v@1a the ao4709 uses advanced trench technology to provide excellent r ds(on) and low gate charge. a schottky diode is provided to facilitate the implementation of non- synchronous dc-dc converters. s...
Description Dual P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

File Size 344.57K  /  5 Page

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    HUFA76413DK8T HUFA76413D

FAIRCHILD[Fairchild Semiconductor]
Part No. HUFA76413DK8T HUFA76413D
OCR Text ...tra-Low On-Resistance rDS(ON) = 0.049, VGS = 10V Ultra-Low On-Resistance rDS(ON) = 0.056, VGS = 5V D1 (8) D1 (7) D2 (6) D2 (5) 1 SO-8 S1 (1) G1 (2) S2 (3) G2 (4) MOSFET Maximum Ratings TA = 25C unless otherwise noted ...
Description Discrete Commercial Dual N-Channel Logic Level UltraFET Power MOSFET, 60V, 5.1A, 0.049 Ohms @ VGS = 10V, SO-8 Package
N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mз

File Size 207.51K  /  11 Page

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    KMB6D6N30Q

KEC(Korea Electronics)
Part No. KMB6D6N30Q
OCR Text ...a b1 dim p d l t 1.27 typ. 5.05+0.25/-0.20 3.90 0.3 + _ 0.42 0.1 + _ 0.15 0.1 + _ 6.00 0.4 + _ 1.4 0.2 + _ 0.20 0.05 + _ 0.5 0.2 + _ b2 b1 1 4 5 8 a 1 2 3 4 8 7 6 5 s s s g d d d d g sss d ddd pin connection (top view) ...
Description N-Ch Trench MOSFET

File Size 367.31K  /  5 Page

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    DMC2038LVT DMC2038LVT-7 DMC2038LVTQ-7

Diodes Incorporated
Part No. DMC2038LVT DMC2038LVT-7 DMC2038LVTQ-7
OCR Text ...ility classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminal connections i ndicator: see diagram ? ...
Description COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

File Size 292.09K  /  10 Page

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    AUIRFP4409

International Rectifier
Part No. AUIRFP4409
OCR Text ... ? jc junction-to-case ?? ??? 0.44 c/w r ? cs case-to-sink, flat greased surface 0.24 ??? r ? ja junction-to-ambient ?? ??? 40 s g d ? automotive grade absolute maximum ratings stresses beyond those listed under ?absolute ...
Description HEXFET? Power MOSFET

File Size 376.01K  /  9 Page

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    SMBTA06M Q62702-A3473

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. SMBTA06M Q62702-A3473
OCR Text ...0 4 - V I C = 1 mA, I B = 0 Collector-base breakdown voltage I C = 100 A, IB = 0 Emitter-base breakdown voltage I E = 10 A, I C = 0 Collector cutoff current VCB = 80 V, I E = 0 Collector cutoff current V nA A nA - VCB = 80 ...
Description INVERTER 12V-INPUT 1200V-OUTPUT NPN硅晶体管自动对焦
NPN Silicon AF Transistor
From old datasheet system

File Size 30.15K  /  4 Page

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    MTP4411AQ8

Cystech Electonics Corp.
Part No. MTP4411AQ8
OCR Text ... package shipping mtp4411aq8-0-t3-g sop-8 (pb-free lead plating an d halogen-free package) 2500 pcs/ tape & reel cystech electronics corp. spec. no. : c386q8 issued date : 2007.06.08 revised date : 2013.09.05 page no. : ...
Description P-Channel Enhancement Mode MOSFET

File Size 256.74K  /  8 Page

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For 0.56m Found Datasheets File :: 143    Search Time::4.109ms    
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