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  0.451 Datasheet PDF File

For 0.451 Found Datasheets File :: 1905    Search Time::3.454ms    
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    EC3H03B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H03B
OCR Text ...age Dimensions unit : mm 2183 0.35 0.2 0.15 0.05 1 0.25 Low noise : NF=1.1dB typ (f=1GHz). High gain : S21e2=12dB typ (f=1GHz). High...451 5.422 4.241 3.447 2.923 2.558 2.297 2.053 1.861 S21 153.7 134.6 111.9 99.0 89.9 83.2 77.3 72....
Description VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications 甚高频到超高频宽带低噪声放大器和OSC应用
NPN Epitaxial Planar Type Silicon Transistor VHF to UHF Wide-Band Low-Noise Amplifier and OSC Applications

File Size 27.88K  /  5 Page

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    EC3H07B

Sanyo Electric Co., Ltd.
Sanyo Semicon Device
Part No. EC3H07B
OCR Text ... Package Dimensions * * * 0.65 0.05 Low noise : NF=1.5dB typ (f=2GHz). unit : mm High cut-off frequency : fT=10GHz typ (VCE=1V)....451 7.427 5.736 4.699 3.949 3.420 3.042 2.726 2.491 2.294 2.131 2.003 1.859 1.765 S21 131.7 110.5...
Description UHF to S Band Low-Noise Amplifier and OSC Applications 超高频的S波段低噪声放大器和OSC应用
NPN Epitaxial Planar Silicon Transistor UHF to S Band Low-Noise Amplifier and OSC Applications NPN Epitaxial Planar Silicon Transistor

File Size 33.24K  /  6 Page

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    IRFBC20L IRFBC20S

IRF[International Rectifier]
Part No. IRFBC20L IRFBC20S
OCR Text ...r 10 seconds Max. 2.2 1.4 8.0 3.1 50 0.40 20 84 2.2 5.0 3.0 -55 to + 150 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C ...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description Power MOSFET(Vdss=600V/ Rds(on)=4.4ohm/ Id=2.2A)
Power MOSFET(Vdss=600V, Rds(on)=4.4ohm, Id=2.2A)
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package

File Size 351.70K  /  10 Page

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    IRFL9014

International Rectifier
Part No. IRFL9014
OCR Text ...ing D VDSS = -60V RDS(on) = 0.50 G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier provide the...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description Power MOSFET(Vdss=-60V, Rds(on)=0.50ohm, Id=-1.8A)

File Size 219.05K  /  8 Page

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    BFP67R BFP67 BFP67W

Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Part No. BFP67R BFP67 BFP67W
OCR Text ...st Conditions VCE = 20 V, VBE = 0 VCB = 15 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 mA, IB = 0 IC = 50 mA, IB = 5 mA VCE = 5 V, IC = 15 mA Symbol ...451 0.442 0.444 0.448 0.467 0.496 0.519 0.558 0.596 0.633 0.666 0.487 0.466 0.455 0.446 0.452 0.453 ...
Description Silicon NPN Planar RF Transistor
From old datasheet system

File Size 207.93K  /  13 Page

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    HSC5094

Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HSC5094
OCR Text ..., Ga=12dB @ VCE=2V, Ic=4.2mA, f=0.9GHz * High Power Gain: MAG=13.5dB @ VCE =5V, Ic =4.5mA, f=0.9GHz Applications * Low noise and high ga...451 0.436 0.424 0.412 0.407 0.401 0.398 0.395 0.393 0.390 0.393 0.390 0.393 0.390 0.389 0.392 0.390 ...
Description NPN SILICON BIPOLAR TRANSISTOR

File Size 59.69K  /  7 Page

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    PVT312

IRF[International Rectifier]
Part No. PVT312
OCR Text ...lay Single Pole, Normally Open, 0-250V, 190mA AC/DC General Description The PVT312 Photovoltaic Relay is a single-pole, normally open so...451 0111 IR FAR EAST: K&H Bldg., 2F, 3-30-4 Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 171 Tel:...
Description Microelectronic Power IC Relay Single Pole, Normally Open, 0-250V, 190mA AC/DC

File Size 212.22K  /  4 Page

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    BFR96TS

Vishay Telefunken
VISAY[Vishay Siliconix]
Part No. BFR96TS
OCR Text ...st Conditions VCE = 20 V, VBE = 0 VCB = 10 V, IE = 0 VEB = 2.5 V, IC = 0 IC = 5 mA, IB = 0 VCE = 10 V, IC = 70 mA Symbol Min Typ Max Unit IC...451 0.474 0.467 0.255 0.234 0.249 0.269 0.291 0.326 0.362 0.383 S22 ANG deg -28.82 -45.0 -51.6 -63.0...
Description From old datasheet system
Silicon NPN Planar RF Transistor

File Size 128.62K  /  9 Page

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    HD29026A J205001HD29026A HD29028 HD29027 J205001_HD29026A

HITACHI[Hitachi Semiconductor]
RENESAS[Renesas Electronics Corporation]
Part No. HD29026A J205001HD29026A HD29028 HD29027 J205001_HD29026A
OCR Text ... VCC 15 10 15 7 1 -20 -65 1 0.735 2 +75 +150 150 V VI I O(peak) Ta Tstg Tj *3 V A PT DP-8 FP-8D W 1. 2. 3. Ta = 25...451-5000 ( 100-0004 6 2 ( 62 ) ) ) ) ) ) ) ) E-Mail E-Mail (03) 3270-2111( ) (0462) 96-6800 ( ...
Description Dual CCD Drivers

File Size 232.91K  /  18 Page

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    IRFBC30S IRFBC30L

IRF[International Rectifier]
Part No. IRFBC30S IRFBC30L
OCR Text ...onds Max. 3.6 2.3 14 3.1 74 0.59 20 290 3.6 7.4 3.0 -55 to + 150 300 (1.6mm from case ) Units A W W W/C V mJ A mJ V/ns C Thermal...451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: ...
Description 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package
Power MOSFET(Vdss=600V, Rds(on)=2.2ohm, Id=3.6A)

File Size 358.14K  /  10 Page

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