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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4425 AO4425L
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| OCR Text |
...nt TJ=125C -2 -50 7.7 11 8.8 43 0.71 1 4.2 3800 VGS=0V, VDS=-20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 350 7.5 63 VGS=-10V, VDS=-20V, I D=-14A 14.1 16.1 12.4 VGS=-10V, VDS=-20V, RL=1.35, RGEN=3 IF=-14A, dI/dt=100A/s IF=-14A, dI/dt=100A/s 9.2 9... |
| Description |
P-Channel Enhancement Mode Field Effect Transistor
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| File Size |
106.08K /
4 Page |
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INTEL[Intel Corporation]
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| Part No. |
376
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| OCR Text |
...
376 EMBEDDED PROCESSOR
1 0 PIN DESCRIPTION
240182 - 52
Figure 1 1 80376 100-Pin Quad Flat-Pack Pin Out (Top View) Table 1 1 100...11M 10M 1K 2J 2K 4M 3M Label A18 A17 A16 A15 A14 A13 A12 A11 A10 A9 A8 A7 A6 A5 A4 A3 A2 A1 BLE BHE ... |
| Description |
376TM HIGH PERFORMANCE 32-BIT EMBEDDED PROCESSOR
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| File Size |
1,275.32K /
95 Page |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AO4720
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| OCR Text |
...30 20 13 10 7.8 120 21 66 3.1 2.0 -55 to 150 1.7 1.1 10.5
Units V V A A A mJ W C
IDSM IDM IAR EAR PDSM TJ, TSTG
Repetitive avalanche energy L=0.3mH C TA=25C Power Dissipation TA=70C Junction and Storage Temperature Range Thermal Ch... |
| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
125.69K /
4 Page |
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it Online |
Download Datasheet |
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AOSMD[Alpha & Omega Semiconductors]
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| Part No. |
AOT426L AOT426
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| OCR Text |
...
Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B
Symbol Steady-State Steady-State RJC
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| Description |
N-Channel Enhancement Mode Field Effect Transistor
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| File Size |
63.61K /
5 Page |
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it Online |
Download Datasheet |
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http://
ANPEC[Anpec Electronics Coropration]
Anpec Electronics Coroprati...
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| Part No. |
APM3009NUC-TUL APM3009NU APM3009NUC-TR APM3009NUC-TRL APM3009NUC-TU
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| OCR Text |
...5 14 9 2.5 1 50 100 75 11 7 1.6 0.6 75 W C/W W C/W A A
Mounted on PCB of Minimum Footprint IDP ID PD RJA
Note: * Current limited by bond wire.
300s Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation Thermal... |
| Description |
N-Channel Enhancement Mode MOSFET
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| File Size |
198.69K /
11 Page |
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it Online |
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GE[General Semiconductor]
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| Part No. |
GFP60N03
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| OCR Text |
0.415 (10.54) Max. 0.154 (3.91) Dia. 0.142 (3.60) 0.113 (2.87) 0.102 (2.56)
D
t NCHT RE FE duc T EN Pro New G
(R)
0.185 (4.70) 0.170 (4.31) 0.055 (1.39) 0.045 (1.14)
VDS 30V RDS(ON) 11m ID 60A
D
G
*
0.155 (3.93) 0.134 (... |
| Description |
N-Channel Enhancement-Mode MOSFET
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| File Size |
112.04K /
5 Page |
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it Online |
Download Datasheet |
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