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Samsung Semiconductor Co., Ltd.
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| Part No. |
K5D5657ACM-F015
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| OCR Text |
...lash memory is organized as 32m x8 bits and 256mbit sdram is organized as 4m x16 bits x4 banks. in 256mbit nand flash, a 528-byte page program can be typically achieved within 200us and an 16k-byte block erase can be typi- cally achieved w... |
| Description |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
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| File Size |
1,869.23K /
74 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1543KV18-400BZC CY7C1545KV18-450BZXI
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| OCR Text |
... is asserted low available in x8, x9, x18, and x36 configurations full data coherency, providing most current data core v dd = 1.8v 0.1...4m x 18 cy7c1545kv18 ? 2m x 36 functional description the cy7c1541kv18, cy7c1556kv18, cy7c1543kv18, ... |
| Description |
Sync SRAM; Architecture: QDR-II , 4 Word Burst; Density: 72 Mb; Organization: 4mb x 18; Vcc (V): 1.7 to 1.9 V 4m X 18 QDR SRAM, 0.45 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
562.79K /
28 Page |
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ELPIDA MEMORY INC
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| Part No. |
UPD45128441G5-A10T-9JF
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| OCR Text |
...organization 4 : x4 8 : x8 memory density 128 : 128m bits synchronous dram nec memory package g5 : tsop (ii) low voltage ...4m words 8 bits 4 banks v cc dq0 v cc q nc dq1 v ss q nc dq2 v cc q nc dq3 v ss q nc v cc n... |
| Description |
32M X 4 SYNCHRONOUS DRAM, 6 ns, PDSO54
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| File Size |
727.19K /
85 Page |
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ELPIDA MEMORY INC
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| Part No. |
UPD45128841G5-A10LI-9JF
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| OCR Text |
...organization 4 : x4 8 : x8 memory density 128 : 128m bits synchronous dram nec memory package g5 : tsop (ii) low voltage ...4m words 8 bits 4 banks v cc dq0 v cc q nc dq1 v ss q nc dq2 v cc q nc dq3 v ss q nc v cc n... |
| Description |
16M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
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| File Size |
726.31K /
85 Page |
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it Online |
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