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For w baked Found Datasheets File :: 835 Search Time::1.86ms
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				Toshiba Semiconductor
Part No.	TLEGD1060 TLBD1060
OCR Text	...ce-mount devices 2.2 (L) x 1.4 (w) x 1.3 (H) mm Flat-top type InGaN LEDs High luminous intensity Low drive current, high-intensity light emi...baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking o...
Description	Panel Circuit Indicator
File Size	226.18K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TLEGD1100B TLBD1100B
OCR Text	...ce-mount devices 3.2 (L) x 2.8 (w) x 1.9 (H) mm Flat-top type InGaN LEDs High luminous intensity Low drive current, high-intensity light emi...baked in taping with reel. After baking, use the baked devices within 72 hours, but perform baking o...
Description	Panel Circuit Indicator
File Size	231.25K / 9 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TJ100F06M3L
OCR Text	...84 -100 175 -55 to 175 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/curre...baked as follows: baking conditions: 125 for 48 hours. note: since the tape materials are not heat...
Description	MOSFETs
File Size	291.76K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TJ150F04M3L
OCR Text	...55 -150 175 -55 to 175 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/curre...baked as follows: baking conditions: 125 for 48 hours. note: since the tape materials are not heat...
Description	MOSFETs
File Size	276.94K / 10 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TLRPA1100 TLBGA1100
OCR Text	...ce-mount devices 3.2 (L) x 2.9 (w) x 1.9 (H) mm UV LED chip + RGB phosphor Colors: bluish green, reddish purple Topr / Tstg = -40 to 100C Re...baked while packed in the tape reel. After baking, use the baked devices within 72 hours, but perfor...
Description	Panel Circuit Indicator
File Size	250.77K / 8 Page	View it Online	Download Datasheet

				Toshiba Semiconductor
Part No.	TJ150F06M3L
OCR Text	...30 -150 175 -55 to 175 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/curre...baked as follows: baking conditions: 125 for 48 hours. note: since the tape materials are not heat...
Description	MOSFETs
File Size	279.88K / 10 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK150F04K3
OCR Text	...sipation (tc = 25c) p d 300 w single pulse avalanche energy (note 2) e as 234 mj avalanche current i ar 150 a repetitive avalan...baked as follows: baking conditions: 125 c for 48 hours. since the tape materials are not heat-pr...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	208.49K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK100F04K3
OCR Text	...sipation (tc = 25c) p d 180 w single pulse avalanche energy (note 2) e as 125 mj avalanche current i ar 100 a repetitive avalan...baked as follows: baking conditions: 125 c for 48 hours. since the tape materials are not heat-pr...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	207.64K / 7 Page	View it Online	Download Datasheet

				TOSHIBA
Part No.	TK100F04K3L
OCR Text	... (heatsink) 3: source to-220sm(w) 2014-01-17 rev.2.0 tk100f04k3l 2 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum r...baked as follows: baking conditions: 125 for 48 hours. note: since the tape materials are not heat...
Description	Power MOSFET (N-ch single 30V<VDSS≤60V)
File Size	281.48K / 10 Page	View it Online	Download Datasheet

For w baked Found Datasheets File :: 835 Search Time::1.86ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | <11> | 12 | 13 | 14 | 15 |