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  v-5000 Datasheet PDF File

For v-5000 Found Datasheets File :: 26409    Search Time::1.234ms    
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    2SD2138 2SD2138A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD2138 2SD2138A
OCR Text ...5 4 2 15 2 150 -55 to +150 Unit V 2SD2138 2SD2138A 2SD2138 C1.0 2.250.2 0.350.1 0.650.1 1.050.1 0.550.1 0.550.1 Collector to bas...5000 4000 to 10000 Rank hFE2 1 Power Transistors PC -- Ta 20 6 (1) TC=Ta (2) Without heat...
Description Silicon NPN triple diffusion planar type Darlington(For power amplification)

File Size 59.65K  /  2 Page

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    2SJ350

HITACHI[Hitachi Semiconductor]
Part No. 2SJ350
OCR Text ...d switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outli...5000 2000 1000 500 200 100 50 20 10 0 VGS = 0 f = 1 MHz -10 -20 -30 -40 -50 Drain to Source Voltage ...
Description Silicon P-Channel MOS FET

File Size 46.11K  /  9 Page

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    2SJ387 2SJ387L 2SJ387S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ387 2SJ387L 2SJ387S
OCR Text ...esistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator, DC - DC converter Out...5000 200 100 50 2000 Ciss 1000 500 200 100 0 -10 -20 -30 Coss 20 10 -0.1 -0.3 -1 -3 -10 ...
Description Silicon P-Channel MOS FET

File Size 46.71K  /  10 Page

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    2SJ399

Hitachi Semiconductor
Part No. 2SJ399
OCR Text ...all package Low drive current 4 V gate drive device can be driven from 5 V source Suitable for low signal load switch. Outline MPAK ...5000 10000 Switching Characteristics tf t d(off) tr t d(on) 2000 1000 500 200 100 VGS = ...
Description Silicon P-Channel MOS FET

File Size 36.00K  /  7 Page

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    2SJ471

HITACHI[Hitachi Semiconductor]
Part No. 2SJ471
OCR Text ... -30 30 150 -55 to +150 Unit V V A A A W C C 2 2SJ471 Electrical Characteristics (Ta = 25C) Item Drain to source breakdown voltag...5000 2000 1000 500 Crss 200 100 0 VGS = 0 f = 1 MHz -4 -8 -12 -16 -20 Ciss Coss 5 -0.1-0.2 -0.5 -...
Description Silicon P Channel DV-L MOS FET High Speed Power Switching

File Size 46.25K  /  10 Page

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    2SJ483

HITACHI[Hitachi Semiconductor]
Part No. 2SJ483
OCR Text ...DS(on) = 0.08 typ (at VGS = -10 V, I D = -2.5 A) * 4V gate drive devices. * Large current capacitance ID = -5 A Outline TO-92MOD. D ...5000 VGS = 0 f = 1 MHz Capacitance C (pF) 200 100 50 2000 1000 Ciss 500 200 Coss 10 di / dt = 20 A /...
Description Silicon P-Channel MOS FET
Silicon P Channel MOS FET High Speed Power Switching

File Size 42.73K  /  9 Page

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    2SJ505 2SJ505L 2SJ505S

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ505 2SJ505L 2SJ505S
OCR Text ... 214 75 150 -55 to +150 Unit V V A A A A mJ W C C EAR* Pch* Tch Tstg Notes: 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. ...5000 2000 1000 500 200 100 0 -10 -20 -30 -40 -50 Drain to Source Voltage V DS (V) Crss Coss Ciss VGS...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 53.43K  /  10 Page

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    2SJ506 2SJ506L 2SJ506S

Renesas Electronics, Corp.
HITACHI[Hitachi Semiconductor]
Part No. 2SJ506 2SJ506L 2SJ506S
OCR Text ...ance R DS(on) = 0.065 typ. (at V GS = -10V, ID = -5A) * Low drive current * High speed switching * 4V gate drive devices. Outline DPAK-...5000 2000 50 Capacitance C (pF) 1000 500 200 100 50 20 10 0 -10 -20 -30 -40 -50 Drain to Source Volt...
Description    Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET

File Size 49.71K  /  10 Page

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    2SJ528 2SJ528L 2SJ528S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ528 2SJ528L 2SJ528S
OCR Text ...stance RDS(on) = 0.17 typ. * 4 V gete drive devices * High speed switching Outline DPAK-2 4 D 4 12 G 3 12 S 3 1. G...5000 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 1000 Ciss 300 Coss 100...
Description Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching

File Size 52.33K  /  9 Page

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    2SJ530 2SJ530L 2SJ530S

HITACHI[Hitachi Semiconductor]
Part No. 2SJ530 2SJ530L 2SJ530S
OCR Text ...ings -60 20 -15 -60 -15 Unit V V A A A A mJ W C C Body-drain diode reverse drain current I DR Avalanche current Avalanche energy Chann...5000 Reverse Recovery Time trr (ns) Capacitance C (pF) 200 100 50 1000 300 100 30 Cis...
Description Silicon P Channel MOS FET High Speed Power Switching

File Size 56.07K  /  9 Page

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For v-5000 Found Datasheets File :: 26409    Search Time::1.234ms    
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