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				Samsung Electronic Samsung semiconductor
Part No.	K9S2808V0M K9S2808V0M-SSB0
OCR Text	...ax.) Main Array 2 cycles(Max.) spare Array 3 cycles(Max.) 3) Added CE don' care mode during the data-loading and reading t April 10th 1999 Final 1.2 1) Revised real-time map-out algorithm(refer to technical notes) 2) Changed vo...
Description	16M x 8Bit SmartMedia?Card Data sheet 16M x 8 Bit SmartMedia Card
File Size	342.66K / 26 Page	View it Online	Download Datasheet

				Elite Semiconductor Mem...
Part No.	F59D4G81A
OCR Text	...the device is a 512mx8bit with spare 16mx8bit capacity (or 256mx16bit with spare 8mx16bit ca pacity). the device is offered in 1.8v v cc power supply. its nand cell provides the most cost-effective solution for the solid state mass st...
Description	Voltage Supply: 1.8V (1.7V ~ 1.95V)
File Size	1,592.18K / 54 Page	View it Online	Download Datasheet

				STMicroelectronics NUMONYX
Part No.	NAND256W4A NAND256W3A NAND256R4A NAND256R3A NAND512W3A M7020 NAND512W3A3DN6T NAND01GW3A2CZA1E NAND512R3A2DN1F NAND512R3A2DN1T NAND512W4A2DN6T
OCR Text	...bit memory array - Up to 32Mbit spare area - Cost effective solutions for mass storage applications s Figure 1. Packages NAND INTERFACE - x8 or x16 bus width - Multiplexed Address/ Data - Pinout compatibility for all densities TSOP4...
Description	32M X 16 FLASH 3V PROM, 12000 ns, PDSO48 64M X 8 FLASH 1.8V PROM, 15000 ns, PDSO48 128 MBIT, 256 MBIT, 512 MBIT, 1 GBIT (X8/X16) 1.8V, 3V SUPPLY FLASH MEMORIES 64M X 8 FLASH 3V PROM, 12000 ns, PDSO48 128M X 8 FLASH 3V PROM, 12000 ns, PBGA63
File Size	62.74K / 5 Page	View it Online	Download Datasheet

				HYNIX[Hynix Semiconductor]
Part No.	HY27UA161G1M HY27UA1G1M HY27UAXXX HY27UA081G1M HY27SAXXX HY27SA081G1M HY27SA161G1M HY27SA1G1M
OCR Text	...GE SIZE - x8 device: (512 + 16 spare) Bytes : HY27(U/S)A081G1M - x16 device: (256 + 8 spare) Words : HY27(U/S)A161G1M DATA INTEGRITY - 100,000 Program/Erase cycles - 10 years Data Retention BLOCK SIZE - x8 device: (16K + 512 spare)...
Description	1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
File Size	722.73K / 43 Page	View it Online	Download Datasheet

				http:// Aeroflex Circuit Technology
Part No.	UT54ACS164245S UT54ACS164245SCC UT54ACS164245SPC UT54ACS164245SWC
OCR Text	...of 1M making it ideal for "cold spare" applications. Balanced outputs and low "on" output impedance make the UT54ACS164245S well suited for driving high capacitance loads and low impedance backplanes. The UT54ACS164245S enables system desig...
Description	RadHard Schmitt CMOS 16-bit Bidirectional MultiPurpose Transceiver
File Size	97.75K / 14 Page	View it Online	Download Datasheet

				Elite Semiconductor Mem...
Part No.	F59D1G81A
OCR Text	... the device is a 128mx8bit with spare 4mx8bit capacity (or 64mx16bit with spare 2mx16bit capacity). the device is offered in 1.8v v cc power supply. its nand cell provides the most cost-effective solution for the solid state mass stora...
Description	Voltage Supply: 1.8V (1.7 V ~ 1.95V)
File Size	1,207.92K / 43 Page	View it Online	Download Datasheet

				Samsung Electronic SAMSUNG[Samsung semiconductor]
Part No.	K9F2808U0C K9F2808U0C-F K9F2808U0C-FCB0 K9F2808U0C-P K9F2808U0C-PCB0 K9F2808U0C-XCB0 K9F2808U0C-XIB0 K9F2808U0C-FIB0 K9F2808U0C-HCB0 K9F2808U0C-HIB0 K9F2808U0C-PIB0 K9F2808U0C-V K9F2808Q0C-HIB0 K9F2808U0C-Y K9F2808Q0C-HCB0 K9F2816U0C-PIB0 K9F2816Q0C-HCB0 K9F2816Q0C-HIB0 K9F2816U0C-HCB0 K9F2816U0C-HIB0 K9F2816U0C-PCB0
OCR Text	...the K9F2808U0C is 128M bit with spare 4M bit capacity. The device is offered in 3.3V Vcc. Its NAND cell provides the most cost-effective solutIon for the solid state mass storage market. A program operation can be performed in typical 200s ...
Description	16M x 8 Bit NAND Flash Memory
File Size	668.79K / 31 Page	View it Online	Download Datasheet

				SAMSUNG[Samsung semiconductor] Samsung Electronic
Part No.	K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K1208D0C
OCR Text	...)x8bit NAND Flash Memory with a spare 32K(32,768)x8bit. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation programs the 264-byte page in typically 250s and an erase operation...
Description	64M x 8 Bit / 32M x 16 Bit NAND Flash Memory 1M x 8 bit NAND Flash Memory
File Size	442.73K / 25 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	NAND01G-B
OCR Text	...bit memory array - Up to 64Mbit spare area - Cost effective solutions for mass storage applications NAND INTERFACE - x8 or x16 bus width - Multiplexed Address/ Data - Pinout compatibility for all densities SUPPLY VOLTAGE - 1.8V device: VDD ...
Description	1 Gbit, 2 Gbit, 4 Gbit, 8 Gbit 2112 Byte/1056 Word Page, 1.8V/3V, NAND Flash Memory
File Size	359.52K / 57 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	NAND01G-N NAND01GR4N5 NAND01GR3N6
OCR Text	...ge size - x8 device: (2048 + 64 spare) Bytes - x16 device: (1024 + 32 spare) Words Block size - x8 device: (128K + 4K spare) Bytes - x16 device: (64K + 2K spare) Words Page Read/Program - Random access: 25s (max) - Sequential access: 50ns (...
Description	1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
File Size	171.67K / 23 Page	View it Online	Download Datasheet

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